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MSW3101-310-W

Pin Diode,

器件类别:分立半导体    二极管   

厂商名称:MACOM

厂商官网:http://www.macom.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
MACOM
Reach Compliance Code
compliant
ECCN代码
EAR99
二极管类型
PIN DIODE
峰值回流温度(摄氏度)
NOT SPECIFIED
处于峰值回流温度下的最长时间
NOT SPECIFIED
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Surface Mount SP3T Switches
MSW3100-310 & MSW3101-310
Series Datasheet
Features
Wide frequency range: 50 MHz to 4 GHz, in 2 bands
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
Higher average power handling than plastic packaged MMIC switches: 158 W CW
High RF peak power: 500 W
Low Insertion loss: 0.45 dB
High IIP3: 65 dBm
Operates from positive voltage: +5 V & +28 V to +125 V
RoHS compliant
Applications
High Power Transmit/Receive (TR) symmetrical switching
Active Receiver Protection
Description
The MSW3100-310 and MSW3101-310 series of surface mount silicon PIN diode SP3T switches can be used
for high power transmit/receive (TR) symmetrical switching or active receiver protection from 50 MHz to 1
GHz (MSW3100-310) or from 400 MHz to 4 GHz (MSW3101-310). These switches are manufactured using
Aeroflex/Metelics proven hybrid manufacturing process incorporating high voltage PIN diodes and passive
devices integrated on a ceramic substrate. These low profile, compact, surface mount components (8 mm
L x 8 mm W x 2.5 mm H) offer superior small and large signal performance compared to that of MMIC devices
in QFN packages. The SP3T switches are designed in a symmetrical topology to enable switched RF port to
be used as the high-input-power-handling port, to minimize insertion loss and to maximize isolation
performance. The very low thermal resistance (< 25ºC/W) of the PIN diodes in these devices enables them
to reliably handle RF incident power levels of 50 dBm CW and RF peak incident power levels of 57 dBm in
cold switching applications. The thick I layers of the PIN diodes (> 100 µm), coupled with their long minority
carrier lifetime (> 2 µs), produces input third order intercept point (IIP3) greater than 65 dBm.
Applications
These MSW3100-310, MSW3101-310 SP3T switches are designed to be used in high average and peak
power switch applications, operating from 50 MHz to 4 GHz in two bands, which utilize high volume, surface
mount, solder re-flow manufacturing. These products are durable and capable of reliably operating in
military, commercial, and industrial environments. The devices are RoHS compliant.
1
Document No. DS 13163 Rev.D, ECN 13841
Revision Date: 6/18/2014
Surface Mount SP3T Switch
Environmental Capabilities
The MSW3100-310 and MSW3101-310 SP3T switches are capable of meeting the environmental
requirements of MIL-STD-202 and MIL-STD-750.
ESD and Moisture Sensitivity Level Rating
PIN Diode Switches are susceptible to ESD conditions as with all semiconductors. The ESD rating for this
device is Class 1C, HBM. The moisture sensitivity level rating for this device is MSL 1.
Pin Out
Schematic
Truth Table for Control of Symmetrical SP3T Switch
MSW310x-310 Series
+V
CC1
= 5 V and +V
CC2
= 28 V (Unless otherwise noted)
Path
J0 – J1
Low Loss
High
Isolation
High
Isolation
Path
J0 – J2
High
Isolation
Low Loss
High
Isolation
Path
J0 – J3
High
Isolation
High
Isolation
Low Loss
J1 Bias
0V
-100 mA
27 V
0 mA
27 V
0 mA
J2 Bias
27 V
0 mA
0V
-100 mA
27 V
0 mA
J3 Bias
27 V
0 mA
27 V
0 mA
0V
-100 mA
B1 Bias
27 V
0 mA
0V
-25 mA
0V
-25 mA
B2 Bias
0V
-25 mA
27 V
0 mA
0V
-25 mA
B3 Bias
0V
-25 mA
0V
-25 mA
27 V
0 mA
J0 Bias
5V
100 mA
5V
100 mA
5V
100 mA
2
603-641-3800 • 888-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Document No. DS 13163 Rev.D, ECN 13841
Revision Date: 6/18/2014
Surface Mount SP3T Switch
MSW3100-310 Electrical Specifications
Parameter
Frequency
Insertion Loss
Symbol
F
IL
Z
0
= 50
Ω
, P
IN
= 0 dBm, T
A
= 25ºC (Unless Otherwise Defined)
Test Conditions
Min.
Value
50
Typ.
Value
Max.
Value
1000
0.6
Units
MHz
dB
Return Loss
RL
Isolation
CW Incident Power (Note 2)
Peak Incident Power (Note 2)
Switching Time (Note 1)
Input 3rd Order Intercept Point
Isol
P
inc
(CW)
P
inc
(Pk)
t
SW
IIP3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
source & load VSWR = 1.5:1
source & load VSWR = 1.5:1,
pulse width = 10 µs, duty cycle = 1 %
10% -90% RF voltage,
TTL rep rate = 100 kHz
F
1
= 500 MHz, F
2
= 510 MHz, P
1
= P
2
= 10 dBm,
measured on path biased to low loss state
0.4
18
20
dB
50
53
50
57
2
3
dB
dBm
dBm
µs
dBm
60
65
MSW3101-310 Electrical Specifications
Parameter
Frequency
Insertion Loss
Symbol
F
IL
Z
0
= 50
Ω
, P
IN
= 0 dBm, T
A
= 25ºC (Unless Otherwise Defined)
Test Conditions
Min.
Value
400
Typ.
Value
Max.
Value
4000
0.8
Units
MHz
dB
Return Loss
RL
Isolation
CW Incident Power (Note 2)
Peak Incident Power (Note 2)
Switching Time (Note 1)
Input 3rd Order Intercept Point
Notes:
1
Isol
P
inc
(CW)
P
inc
(Pk)
t
SW
IIP3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
Bias state 1: port J0 to J2, J3
Bias state 2: port J0 to J1, J3
Bias state 3: port J0 to J1, J2
source & load VSWR = 1.5:1
source & load VSWR = 1.5:1,
pulse width = 10 µs, duty cycle = 1 %
10% -90% RF voltage,
TTL rep rate = 100 kHz
F
1
= 2.00 GHz, F
2
= 2.01 GHz, P
1
= P
2
= 10 dBm,
measured on path biased to low loss state
0.6
14
15
dB
32
34
50
57
2
3
dB
dBm
dBm
µs
dBm
60
65
Switching Speed ( 50 % TTL – 10/90 % RF Voltage ) is a function of the PIN diode driver performance as well as the characteristics of the
diode. An RC “current spiking network” is used on the driver output to provide a transient current to rapidly remove stored charge from the
PIN diode. Typical component values are: R = 50 to 220
Ω
and C = 470 to 1,000 pF. Aeroflex/Metelics MPD3T28125-700 is the
recommended PIN diode driver to interface with the MSW3100-310, MSW3101-310 SP3T switches. Its data sheet may be found at
(http://www.aeroflex.com/ams/metelics/micro-metelics-products.cfm).
2
PIN diode DC reverse voltage to maintain high resistance in the OFF PIN diode is determined by RF frequency, incident power, and VSWR as
well as by the characteristics of the diode. The minimum reverse bias voltage values are provided in this datasheet. The input signal level
applied for small signal testing is approximately 0 dBm.
603-641-3800 • 888-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Document No. DS 13163 Rev.D, ECN 13841
Revision Date: 6/18/2014
3
Surface Mount SP3T Switch
RF Bias Network Component Values
P/N
MSW3100-310
MSW3101-310
F ( MHz )
50 – 1,000
400 – 4,000
DC Blocking Capacitors
0.1 µF
22 pF
Inductors
4.7 µH
82 nH
RF Bypass Capacitors
0.1 µF
270 pF
Minimum Reverse Bias Voltage at J1, J2, J3, B1, B2 and B3 Ports vs.
Signal Frequency
P
INC
= 100 W CW, Z
0
= 50
Ω
with 1.5:1 VSWR
Part Number
MSW3100-310
MSW3101-310
F = 20 MHz
120 V
NA
F = 100 MHz
110 V
NA
F = 200 MHz
85 V
110 V
F = 400 MHz
55 V
85 V
F = 1 GHz
28 V
55 V
F = 4 GHz
NA
28 V
Note: “NA” denotes the switch is not recommended for use in that frequency band.
Absolute Maximum Ratings
Parameter
Forward Current - J1, J2, J3 Port
Forward Current - B1, B2, B3 Port
Reverse Voltage - J1, J2, J3 Port
Reverse Voltage - B1, B2, B3 Port
Forward Diode Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Assembly Temperature
CW Incident Power Handling –
J0 or J1, J2, J3 Port (Note 1)
Peak Incident Power Handling –
J0 or J1, J2, J3 Port (Note 1)
Total Dissipated RF & DC Power (Note 1)
Notes:
1
Z
0
= 50
Ω
, T
A
= +25ºC (Unless Otherwise Defined)
Conditions
Absolute Maximum Value
250 mA
150 mA
125 V
125 V
I
F
= 250 mA
1.2 V
-65ºC to 125ºC
-65ºC to 150ºC
175ºC
260ºC for 10 s
Source & load VSWR = 1.5 :1,
T
CASE
= 85 ºC, cold switching
Source & load VSWR = 1.5 :1, T
CASE
= 85ºC, cold switching,
pulse width = 10 µs, duty cycle = 1 %
T
CASE
= 85ºC, cold switching
50 dBm
57 dBm
5W
Backside RF and DC grounding area of device must be completely solder-attached to RF circuit board vias for proper electrical
and thermal circuit grounding.
4
603-641-3800 • 888-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Document No. DS 13163 Rev.D, ECN 13841
Revision Date: 6/18/2014
Surface Mount SP3T Switch
MSW3100-310 Small Signal Parametric Performance
Z
0
= 50
Ω
, T
A
= +25ºC (Unless Otherwise Defined)
603-641-3800 • 888-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Document No. DS 13163 Rev.D, ECN 13841
Revision Date: 6/18/2014
5
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参数对比
与MSW3101-310-W相近的元器件有:MSW3100-310-T、MSW3101-310-R。描述及对比如下:
型号 MSW3101-310-W MSW3100-310-T MSW3101-310-R
描述 Pin Diode, Pin Diode, Silicon, 8 X 8 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, CASE 310, 7 PIN Pin Diode, Silicon, 8 X 8 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, CASE 310, 7 PIN
是否Rohs认证 符合 符合 符合
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
二极管类型 PIN DIODE PIN DIODE PIN DIODE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 MACOM - MACOM
包装说明 - S-XQCC-N7 S-XQCC-N7
其他特性 - HIGH VOLTAGE HIGH VOLTAGE
应用 - SWITCHING SWITCHING
配置 - COMPLEX COMPLEX
二极管元件材料 - SILICON SILICON
最大二极管正向电阻 - 1 Ω 1 Ω
频带 - S BAND S BAND
JESD-30 代码 - S-XQCC-N7 S-XQCC-N7
元件数量 - 6 6
端子数量 - 7 7
封装主体材料 - UNSPECIFIED UNSPECIFIED
封装形状 - SQUARE SQUARE
封装形式 - CHIP CARRIER CHIP CARRIER
认证状态 - Not Qualified Not Qualified
表面贴装 - YES YES
技术 - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
端子形式 - NO LEAD NO LEAD
端子位置 - QUAD QUAD
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