8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F008B3
MT28F800B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Eleven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Eight main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V V
CC
3.3V ±0.3V V
PP
application programming
5V ±10% V
PP
application/production programming
1
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 90ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP, SOP and FBGA packaging options
• Byte- or word-wide READ and WRITE
(MT28F800B3):
1 Meg x 8/512K x 16
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP
OPTIONS
• Timing
90ns access
• Configurations
1 Meg x 8
512K x 16/1 Meg x 8
• Boot Block Starting Word Address
Top (7FFFFh)
Bottom (00000h)
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
• Packages
40-pin TSOP Type I (MT28F008B3)
48-pin TSOP Type I (MT28F800B3)
44-pin SOP (MT28F800B3)
NOTE:
MARKING
-9
GENERAL DESCRIPTION
MT28F008B3
MT28F800B3
T
B
None
ET
VG
WG
SG
The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are
low-voltage, nonvolatile, electrically block-erasable (flash),
programmable memory devices containing 8,388,608 bits
organized as 524,288 words (16 bits) or 1,048,576 bytes (8
bits). Writing and erasing the device is done with a V
PP
voltage of either 3.3V or 5V, while all operations are
performed with a 3.3V V
CC
. Due to process technology
advances, 5V V
PP
is optimal for application and production
programming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
The MT28F008B3 and MT28F800B3 are organized
into eleven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. This block may be used to store code imple-
mented in low-level system recovery. The remaining
blocks vary in density and are written and erased with
no additional security measures.
Refer to Micron’s Web site (www.micron.com/flash)
for the latest data sheet.
1. This generation of devices does not support 12V V
PP
production programming; however, 5V V
PP
application
production programming can be used with no loss of
performance.
Part Number Example:
MT28F800B3WG-9 BET
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
PIN ASSIGNMENT (Top View)
48-Pin TSOP Type I
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
V
PP
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
V
SS
DQ15/(A - 1)
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
V
PP
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44-Pin SOP
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RP#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V
SS
DQ15/(A - 1)
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
ORDER NUMBER AND PART MARKING
MT28F800B3WG-9 B
MT28F800B3WG-9 T
MT28F800B3WG-9 BET
MT28F800B3WG-9 TET
DQ3
DQ11
ORDER NUMBER AND PART MARKING
MT28F800B3SG-9 B
MT28F800B3SG-9 T
MT28F800B3SG-9 BET
MT28F800B3SG-9 TET
40-Pin TSOP Type I
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
V
PP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A17
V
SS
NC
A19
A10
DQ7
DQ6
DQ5
DQ4
V
CC
V
CC
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
ORDER NUMBER AND PART MARKING
MT28F008B3VG-9 B
MT28F008B3VG-9 T
MT28F008B3VG-9 BET
MT28F008B3VG-9 TET
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
FUNCTIONAL BLOCK DIAGRAM
8
Input
Buffer
BYTE#
2
I/O
Control
Logic
16KB Boot Block
Addr.
7
Input
Buffer
A0–A18/(A19)
A9
Buffer/
Latch
19 (20)
10
8KB Parameter Block
8KB Parameter Block
96KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
16
Input Data
Latch/Mux
A-1
Input
Buffer
X - Decoder/Block Erase Control
9
(10)
Addr.
Power
(Current)
Control
Counter
DQ15/(A - 1)
2
DQ8–DQ14
2
WP#
1
CE#
OE#
WE#
RP#
V
CC
V
PP
V
PP
Switch/
Pump
Command
Execution
Logic
State
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
Machine
Y-
Decoder
7
Y - Select Gates
8
Sense Amplifiers
Write/Erase-Bit
Compare and Verify
DQ0–DQ7
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
Output
Buffer
DQ15
Status
Register
Identification
Register
7
Output
Buffer
8
Output
Buffer
MUX
8
NOTE:
1. Does not apply to MT28F800B3SG.
2. Does not apply to MT28F008B3.
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
PIN DESCRIPTIONS
44-PIN SOP 40-PIN TSOP 48-PIN TSOP
NUMBERS NUMBERS NUMBERS SYMBOL
43
9
11
WE#
TYPE
Input
DESCRIPTION
Write Enable: Determines if a given cycle is a WRITE cycle. If
WE# is LOW, the cycle is either a WRITE to the command
execution logic (CEL) or to the memory array.
Write Protect: Unlocks the boot block when HIGH if V
PP
=
V
PPH
1
(3.3V) or V
PPH
2
(5V) and RP# = V
IH
during a WRITE or
ERASE. Does not affect WRITE or ERASE operation on other
blocks.
Chip Enable: Activates the device when LOW. When CE# is
HIGH, the device is disabled and goes into standby power
mode.
Reset/Power-Down: When LOW, RP# clears the status register,
sets the internal state machine (ISM) to the array read mode
and places the device in deep power-down mode. All inputs,
including CE#, are “Don’t Care,” and all outputs are High-Z.
RP# unlocks the boot block and overrides the condition of
WP# when at V
HH
(12V), and must be held at V
IH
during all
other modes of operation.
Output Enable: Enables data output buffers when LOW.
When OE# is HIGH, the output buffers are disabled.
Byte Enable: If BYTE# = HIGH, the upper byte is active through
DQ8–DQ15. If BYTE# = LOW, DQ8–DQ14 are High-Z, and all
data is accessed through DQ0–DQ7. DQ15/(A - 1) becomes the
least significant address input.
Address Inputs: Select a unique 16-bit word or 8-bit byte. The
DQ15/(A - 1) input becomes the lowest order address when
BYTE# = LOW (MT28F800B3) to allow for a selection of an 8-
bit byte from the 1,048,576 available.
–
12
14
WP#
Input
12
22
26
CE#
Input
44
10
12
RP#
Input
14
33
24
–
28
47
OE#
BYTE#
Input
Input
11, 10, 9, 8,
7, 6, 5, 4, 42,
41, 40, 39,
38, 37, 36,
35, 34, 3, 2
31
21, 20, 19, 18,
17, 16, 15, 14,
8, 7, 36, 6, 5,
4, 3, 2, 1, 40,
13, 37
–
25, 24, 23,
22, 21, 20,
19, 18, 8, 7,
6, 5, 4, 3, 2,
1, 48, 17, 16
45
A0–A18/
(A19)
Input
DQ15/
(A - 1)
DQ0–
DQ7
DQ8–
DQ14
V
PP
Input/ Data I/O: MSB of data when BYTE# = HIGH. Address Input: LSB
Output of address input when BYTE# = LOW during READ or WRITE
operation.
Input/ Data I/Os: Data output pins during any READ operation or
Output data input pins during a WRITE. These pins are used to input
commands to the CEL.
Input/ Data I/Os: Data output pins during any READ operation or
Output data input pins during a WRITE when BYTE# = HIGH. These
pins are High-Z when BYTE# is LOW.
Supply Write/Erase Supply Voltage: From a WRITE or ERASE CONFIRM
until completion of the WRITE or ERASE, V
PP
must be at V
PPH
1
(3.3V) or V
PPH
2
(5V). V
PP
= “Don’t Care” during all other
operations.
Supply Power Supply: +3.3V ±0.3V.
Supply Ground.
–
No Connect: These pins may be driven or left unconnected.
15, 17, 19,
21, 24, 26,
28, 30
16, 18, 20,
22, 25, 27,
29
1
25, 26, 27,
28, 32, 33,
34, 35
–
29, 31, 33,
35, 38, 40,
42, 44
30, 32, 34,
36, 39, 41,
43
13
11
23
13, 32
–
30, 31
23, 39
29, 38
37
27, 46
9, 10, 15
V
CC
V
SS
NC
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
TRUTH TABLE (MT28F800B3)
1
FUNCTION
Standby
RESET
READ
READ (word mode)
READ (byte mode)
Output Disable
ERASE SETUP
ERASE CONFIRM
3
WRITE SETUP
WRITE (word mode)
4
WRITE (byte mode)
4
READ ARRAY
5
WRITE/ERASE (BOOT BLOCK)
2, 7
ERASE SETUP
ERASE CONFIRM
3
ERASE CONFIRM
3, 6
WRITE SETUP
WRITE (word mode)
4
WRITE (word mode)
4, 6
WRITE (byte mode)
4
WRITE (byte mode)
4, 6
READ ARRAY
5
DEVICE IDENTIFICATION
8, 9
Manufacturer Compatibility
(word mode)
10
Manufacturer Compatibility
(byte mode)
Device (word mode, top boot)
10
Device (byte mode, top boot)
Device (word mode, bottom boot)
10
Device (byte mode, bottom boot)
NOTE:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
RP#
H
L
H
H
H
H
H
H
H
H
H
H
V
HH
H
H
V
HH
H
V
HH
H
H
H
H
H
H
H
H
CE#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
OE#
X
X
L
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
WE# WP# BYTE# A0
X
X
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
H
X
H
X
X
X
X
X
X
X
X
X
H
L
X
X
X
X
H
L
X
X
X
X
X
H
H
L
L
X
H
L
H
L
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
H
H
H
H
A9
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
V
ID
V
ID
V
ID
V
ID
V
ID
V
ID
V
PP
X
X
X
X
X
X
V
PPH
X
V
PPH
V
PPH
X
X
V
PPH
V
PPH
X
V
PPH
V
PPH
V
PPH
V
PPH
X
X
X
X
X
X
X
DQ0–DQ7 DQ8–DQ14 DQ15/A - 1
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Data-Out Data-Out Data-Out
Data-Out High-Z
High-Z
20h
D0h
10h/40h
Data-In
Data-In
FFh
20h
D0h
D0h
10h/40h
Data-In
Data-In
Data-In
Data-In
FFh
89h
89h
9Ch
9Ch
9Dh
9Dh
High-Z
X
X
X
Data-In
X
X
X
X
X
X
Data-In
Data-In
X
X
X
00h
High-Z
88h
High-Z
88h
High-Z
A-1
High-Z
X
X
X
Data-In
A-1
X
X
X
X
X
Data-In
Data-In
A-1
A-1
X
–
X
–
X
–
X
WRITE/ERASE (EXCEPT BOOT BLOCK)
2
L = V
IL
(LOW), H = V
IH
(HIGH), X = V
IL
or V
IH
(“Don’t Care”).
V
PPH
= V
PPH1
= 3.3V or V
PPH2
= 5V.
Operation must be preceded by ERASE SETUP command.
Operation must be preceded by WRITE SETUP command.
The READ ARRAY command must be issued before reading the array after writing or erasing.
When WP# = V
IH
, RP# may be at V
IH
or V
HH
.
V
HH
= 12V.
V
ID
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
A1–A8, A10–A18 = V
IL
.
Value reflects DQ8–DQ15.
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
51单片机
