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MT45W4ML16BBB-858WT

Pseudo Static RAM, 4MX16, 85ns, CMOS, PBGA54, LEAD FREE, VFBGA-54

器件类别:存储    存储   

厂商名称:Micron Technology

厂商官网:http://www.mdtic.com.tw/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Micron Technology
零件包装代码
BGA
包装说明
VFBGA, BGA54,6X9,30
针数
54
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.A
最长访问时间
85 ns
I/O 类型
COMMON
JESD-30 代码
R-PBGA-B54
JESD-609代码
e1
长度
8 mm
内存密度
67108864 bit
内存集成电路类型
PSEUDO STATIC RAM
内存宽度
16
功能数量
1
端子数量
54
字数
4194304 words
字数代码
4000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-25 °C
组织
4MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
VFBGA
封装等效代码
BGA54,6X9,30
封装形状
RECTANGULAR
封装形式
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
电源
1.8,3 V
认证状态
Not Qualified
座面最大高度
1 mm
最大待机电流
0.00012 A
最大压摆率
0.035 mA
最大供电电压 (Vsup)
1.95 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
OTHER
端子面层
TIN SILVER COPPER
端子形式
BALL
端子节距
0.75 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
30
宽度
6 mm
文档预览
PRELIMINARY
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
BURST
CellularRAM
TM
Features
Single device supports asynchronous, page, and burst
operations
V
CC
, V
CC
Q Voltages
1.70V–1.95V V
CC
1.70V–2.25V V
CC
Q (Option W)
2.30V–2.70V V
CC
Q (Option V—contact factory)
2.70V–3.30V V
CC
Q (Option L—contact factory)
Random Access Time: 70ns
Burst Mode Write Access
Continuous burst
Burst Mode Read Access
4, 8, or 16 words, or continuous burst
MAX clock rate: 104 MHz ( CLK = 9.62ns)
Burst initial latency: 39ns (4 clocks) @ 104 MHz
t
ACLK: 6.5ns @ 104 MHz
t
MT45W4MW16BFB MT45W2MW16BFB
Figure 1: Ball Assignment
54-Ball VFBGA
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
Page Mode Read Access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
Low Power Consumption
Asynchronous READ < 25mA
Intrapage READ < 15mA
Initial access, burst READ: (39ns [4 clocks]
@ 104 MHz) < 35mA
Continuous burst READ < 15mA
Standby: 120µA (64Mb), 110µA (32MB)—standard
100µA (64Mb), 90µA (32Mb)—low-power option
Deep power-down < 10µA
Low-Power Features
Temperature Compensated Refresh (TCR)
Partial Array Refresh (PAR)
Deep Power-Down (DPD) Mode
Designator
V
CC
Q
DQ12
A21
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
WAIT
CLK
ADV#
NC
NC
NC
Top View
(Ball Down)
See Table 1 on page 6 for ball descriptions, and Figure 45 on
page 52 for 54-ball mechanical drawing.
Options
(continued)
Designator
6
8
1
1
None
L
WT
IT
1
Options
Configuration:
4 Meg x 16
2 Meg x 16
V
CC
Core Voltage Supply:
1.80V – MT45WxMx16B
V
CC
Q I/O Voltage
3.0V – MT45WxML16B
2.5V – MT45WxMV16B
1.8V – MT45WxMW16B
Package
54-ball VFBGA
54-ball VFBGA—Lead-free
Timing
60ns access
70ns access
85ns access
MT45W4Mx16B
MT45W2Mx16B
W
L
1
V
1
W
FB
BB
1
Frequency
66 MHz
80 MHz
104 MHz
Standby power
Standard
Low-power
Operating Temperature Range
Wireless (-25°C to +85°C)
Industrial (-40°C to +85°C)
1. Contact factory.
-60
-70
-85
1
Part Number Example:
MT45W2MW16BFB-706LWT
1
09005aef80be1fbd
Burst CellularRAM.fm - Rev. D 5/19/04 EN
©2004 Micron Technology, Inc. All Rights Reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
PRELIMINARY
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
Table of Contents
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
List of Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Power-Up Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Bus Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Asynchronous Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Page Mode READ Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Burst Mode Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Mixed-Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Wait Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
LB#/UB# Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Low-Power Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Standby Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Temperature Compensated Refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Partial Array Refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Deep Power-Down Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Configuration Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Access Using CRE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Software Access. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Bus Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Burst Length (BCR[2:0]) Default = Continuous Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Burst Wrap (BCR[3]) Default = Burst No Wrap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Output Impedance (BCR[5]) Default = Outputs Use Full Drive Strength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
WAIT Configuration (BCR[8])Default = WAIT Transitions One Clock Before Data Valid/Invalid . . . . . . . . . . . . 19
WAIT Polarity (BCR[10]) Default = WAIT Active HIGH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Latency Counter (BCR[13:11]) Default = Three-Clock Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Operating Mode (BCR[15]) Default = Asynchronous Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Refresh Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Partial Array Refresh (RCR[2:0]) Default = Full Array Refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Deep Power-Down (RCR[4]) Default = DPD Disabled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Temperature Compensated Refresh (RCR[6:5]) Default = +85°C Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Page Mode Operation (RCR[7]) Default = Disabled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Timing Diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Data Sheet Designation: PRELIMINARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
09005aef80be1fbd
Burst CellularRAM.fm - Rev. D 5/19/04 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All Rights Reserved.
PRELIMINARY
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
List of Tables
Table 1:
Table 2:
Table 3:
Table 4:
Table 5:
Table 6:
Table 7:
Table 8:
Table 9:
Table 10:
Table 11:
Table 12:
Table 13:
Table 14:
Table 15:
Table 16:
Table 17:
Table 18:
Table 19:
Table 20:
Table 21:
Table 22:
Table 23:
Table 24:
Table 25:
Table 26:
Table 27:
Table 28:
Table 29:
Table 30:
Table 31:
Table 32:
Table 33:
Table 34:
Table 35:
Table 36:
Table 37:
Table 38:
Table 39:
Table 40:
Table 41:
Table 42:
Table 43:
Table 44:
Table 45:
Table 46:
Table 47:
Table 48:
VFBGA Ball Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Bus Operations – Asynchronous Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus Operations – Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus Configuration Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Sequence and Burst Length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Latency Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Refresh Configuration Register Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
64Mb Address Patterns for PAR (RCR[4] = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
32Mb Address Patterns for PAR (RCR[4] = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Electrical Characteristics and Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Temperature Compensated Refresh Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Partial Array Refresh Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Deep Power-Down Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Output Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Asynchronous READ Cycle Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Burst READ Cycle Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Asynchronous WRITE Cycle Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Burst WRITE Cycle Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Initialization Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Asynchronous READ Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Asynchronous READ Timing Parameters Using ADV#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Asynchronous READ Timing Parameters—Page Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Burst READ Timing Parameters—Single Access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Burst READ Timing Parameters—4-Word Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Burst READ Timing Parameters—4-Word Burst with LB#/UB#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Burst READ Timing Parameters—Burst Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Burst READ Timing Parameters—BCR[8] = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Asynchronous WRITE Timing Parameters—CE#-Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Asynchronous WRITE Timing Parameters—LB#/UB#-Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Asynchronous WRITE Timing Parameters—WE#-Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Asynchronous WRITE Timing Parameters Using ADV# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Burst WRITE Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Burst WRITE Timing Parameters—BCR[8] = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
WRITE Timing Parameters—Burst WRITE Followed by Burst READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
READ Timing Parameters—Burst WRITE Followed by Burst READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
WRITE Timing Parameters—Async WRITE Followed by Burst READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
READ Timing Parameters—Async WRITE Followed by Burst READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
WRITE Timing Parameters—Async WRITE Followed by Burst READ—ADV# LOW . . . . . . . . . . . . . . . . 47
READ Timing Parameters—Async WRITE Followed by Burst READ—ADV# LOW . . . . . . . . . . . . . . . . . 47
Burst READ Timing Parameters—Burst READ Followed by Async WRITE (WE#-Control) . . . . . . . . . . 48
Asynchronous WRITE Timing Parameters—Burst READ Followed by Async WRITE (WE#-Control) . 48
Burst READ Timing Parameters—Burst READ Followed by Async WRITE Using ADV# . . . . . . . . . . . . 49
Asynchronous WRITE Timing Parameters—Burst READ Followed by Async WRITE Using ADV# . . . 49
WRITE Timing Parameters—Async WRITE Followed by Async READ—ADV# LOW . . . . . . . . . . . . . . . 50
READ Timing Parameters—Async WRITE Followed by Async READ—ADV# LOW . . . . . . . . . . . . . . . . 50
WRITE Timing Parameters—Async WRITE Followed by Async READ . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
READ Timing Parameters—Async WRITE Followed by Async READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
09005aef80be1fbd
Burst CellularRAM.fm - Rev. D 5/19/04 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All Rights Reserved.
PRELIMINARY
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Figure 21
Figure 22
Figure 23
Figure 24
Figure 25
Figure 26
Figure 27
Figure 28
Figure 29
Figure 30
Figure 31
Figure 32
Figure 33
Figure 34
Figure 35
Figure 36
Figure 37
Figure 38
Figure 39
Figure 40
Figure 41
Figure 42
Figure 43
Figure 44
Figure 45
Ball Assignment 54-Ball VFBGA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Functional Block Diagram – 4 Meg x 16 and 2 Meg x 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Part Number Chart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power-Up Initialization Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
READ Operation (ADV = LOW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
WRITE Operation (ADV = LOW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Page Mode READ Operation (ADV = LOW). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Burst Mode READ (4-word burst) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Burst Mode WRITE (4-word burst) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Wired or WAIT Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Refresh Collision During READ Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Refresh Collision During WRITE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Configuration Register WRITE in Asynchronous Mode Followed by READ . . . . . . . . . . . . . . . . . . . . . . . 15
Configuration Register WRITE in Synchronous Mode Followed by READ . . . . . . . . . . . . . . . . . . . . . . . . 15
Load Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Read Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
WAIT Configuration (BCR[8] = 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
WAIT Configuration (BCR[8] = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
WAIT Configuration During Burst Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Latency Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
AC Input/Output Reference Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Output Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Initialization Period . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Asynchronous READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Asynchronous READ Using ADV#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Page Mode READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Single-Access Burst READ Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
4-Word Burst READ Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
4-Word Burst READ Operation (with LB#/UB#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
READ Burst Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Continuous Burst READ with Output Delay, BCR[8] = 0(1) for End-of-Row Condition . . . . . . . . . . . . . 38
CE#-Controlled Asynchronous WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
LB#/UB#-Controlled Asynchronous WRITE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
WE#-Controlled Asynchronous WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Asynchronous WRITE Using ADV#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Burst WRITE Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Continuous Burst WRITE with Output Delay, BCR[8] = 0(1) for End-of-Row Condition . . . . . . . . . . . . 44
Burst WRITE Followed by Burst READ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Asynchronous WRITE Followed by Burst READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Asynchronous WRITE Followed By Burst READ—ADV# LOW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Burst READ Followed by Asynchronous WRITE (WE#-Controlled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Burst READ Followed by Asynchronous WRITE Using ADV#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Asynchronous WRITE Followed by Asynchronous READ—ADV# LOW. . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Asynchronous WRITE Followed by Asynchronous READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
54-Ball VFBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
09005aef80be1fbd
Burst CellularRAM.fm - Rev. D 5/19/04 EN
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All Rights Reserved.
PRELIMINARY
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
Micron
CellularRAM™ products are high-speed,
CMOS dynamic random access memories developed
for
low-power,
portable
applications.
The
MT45W4MW16BFB is a 64Mb device organized as 4
Meg x 16 bits; the MT45W2MW16BFB is a 32Mb
device organized as 2 Meg x 16 bits. These devices
include an industry-standard burst mode Flash inter-
face that dramatically increases read/write bandwidth
compared with other low-power SRAM or Pseudo
SRAM offerings.
To operate seamlessly on a burst Flash bus, Cellular-
RAM products incorporate a transparent self-refresh
mechanism. The hidden refresh requires no additional
support from the system memory controller and has
no significant impact on device read/write perfor-
mance.
Two user-accessible control registers define device
operation. The bus configuration register (BCR)
defines how the CellularRAM device interacts with the
system memory bus and is nearly identical to its coun-
General Description
terpart on burst mode Flash devices. The refresh con-
figuration register (RCR) is used to control how refresh
is performed on the DRAM array. These registers are
automatically loaded with default settings during
power-up and can be updated anytime during normal
operation.
Special attention has been focused on standby cur-
rent consumption during self refresh. CellularRAM
products include three system-accessible mechanisms
used to minimize standby current. Partial array refresh
(PAR) limits refresh to only that part of the DRAM array
that contains essential data. Temperature compen-
sated refresh (TCR) is used to adjust the refresh rate
according to the case temperature. The refresh rate
can be decreased at lower temperatures to minimize
current consumption during standby. Deep power-
down (DPD) halts the refresh operation altogether and
is used when no vital information is stored in the
device. These three refresh mechanisms are accessed
through the RCR.
Figure 2: Functional Block Diagram—4 Meg x 16 and 2 Meg x 16
A[21:0]
(for 64Mb)
A[20:0]
(for 32Mb)
Address Decode
Logic
4,096K x 16
(2,048K x 16)
DRAM
MEMORY
ARRAY
Input/
Output
MUX
and
Buffers
DQ[7:0]
DQ[15:8]
Refresh Configuration
Register (RCR)
Bus Configuration
Register (BCR)
CE#
WE#
OE#
CLK
ADV#
CRE
WAIT
LB#
UB#
Control
Logic
NOTE:
Functional block diagrams illustrate simplified device operation. See truth table, ball descriptions, and timing
diagrams for detailed information.
09005aef80be1fbd
Burst CellularRAM.fm - Rev. D 5/19/04 EN
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All Rights Reserved.
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