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MT46V32M8P-6IT:F

DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66

器件类别:存储    存储   

厂商名称:Micron Technology

厂商官网:http://www.mdtic.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Micron Technology
零件包装代码
TSOP
包装说明
TSSOP,
针数
66
Reach Compliance Code
compliant
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
最长访问时间
0.7 ns
其他特性
AUTO/SELF REFRESH
JESD-30 代码
R-PDSO-G66
JESD-609代码
e3
长度
22.22 mm
内存密度
268435456 bit
内存集成电路类型
DDR DRAM
内存宽度
8
功能数量
1
端口数量
1
端子数量
66
字数
33554432 words
字数代码
32000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
32MX8
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.2 mm
自我刷新
YES
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
10.16 mm
文档预览
256Mb: x4, x8, x16 DDR SDRAM
Features
Double Data Rate (DDR) SDRAM
MT46V64M4 – 16 Meg x 4 x 4 banks
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR400)
• Bidirectional data strobe (DQS) transmitted/
received with data, that is, source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths (BL): 2, 4, or 8
• Auto refresh
64ms, 8192-cycle(Commercial & Industrial)
16ms, 8192-cycle (Automotive)
• Self refresh (not available on AT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2-compatible)
• Concurrent auto precharge option supported
t
RAS lockout supported (
t
RAP =
t
RCD)
Options
Marking
• Configuration
64 Meg x 4 (16 Meg x 4 x 4 banks)
64M4
32 Meg x 8 (8 Meg x 8 x 4 banks)
32M8
16 Meg x 16 (4 Meg x 16 x 4 banks)
16M16
• Plastic package – OCPL
66-pin TSOP
TG
66-pin TSOP (Pb-free)
P
• Plastic package
FG
1
60-ball FBGA (8mm x 14mm)
BG
1
60-ball FBGA (8mm x 14mm) (Pb-free)
CV
2
60-ball FBGA (8mm x 12.5mm)
CY
2
60-ball FBGA (8mm x 12.5mm)
(Pb-free)
• Timing – cycle time
5ns @ CL = 3 (DDR400B)
-5B
6ns @ CL = 2.5 (DDR333) FBGA only
-6
6ns @ CL = 2.5 (DDR333) TSOP only
-6T
-75E
1
7.5ns @ CL = 2 (DDR266)
-75Z
1
7.5ns @ CL = 2 (DDR266A)
-75
1
7.5ns @ CL = 2.5 (DDR266B)
• Self refresh
Standard
None
Low-power self refresh
L
• Temperature rating
Commercial (0°C to +70°C)
None
Industrial (–40°C to +85°C)
IT
Automotive (–40°C to +105°C)
AT
4
• Revision
:G
3
x4, x8
:F
3
x16
x4, x8, x16
:K
Notes: 1. Only available on Revision F and G.
2. Only available on Revision K.
3. Not recommended for new designs.
4. Contact Micron for availability.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
256Mb: x4, x8, x16 DDR SDRAM
Features
Table 1:
Key Timing Parameters
CL = CAS (READ) latency; MIN clock rate with 50% duty cycle at CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and
CL = 3 (-5B)
Clock Rate (MHz)
Speed Grade
-5B
-6
6T
-75E/-75Z
-75
CL = 2
133
133
133
133
100
CL = 2.5
167
167
167
133
133
CL = 3
200
n/a
n/a
n/a
n/a
Data-Out Window Access Window DQS–DQ Skew
1.6ns
±0.70ns
+0.40ns
2.1ns
±0.70ns
+0.40ns
2.0ns
±0.70ns
+0.45ns
2.5ns
±0.75ns
+0.50ns
2.5ns
±0.75ns
+0.50ns
Table 2:
Parameter
Addressing
64 Meg x 4
16 Meg x 4 x 4 banks
8K
8K (A0–A12)
4 (BA0, BA1)
2K (A0–A9, A11)
32 Meg x 8
8 Meg x 8 x 4 banks
8K
8K (A0–A12)
4 (BA0, BA1)
1K (A0–A9)
16 Meg x 16
4 Meg x 16 x 4 banks
8K
8K (A0–A12)
4 (BA0, BA1)
512 (A0–A8)
Configuration
Refresh count
Row address
Bank address
Column address
Table 3:
Marking
-5B
1
-6
-6T
-75E
-75Z
-75
Speed Grade Compatibility
PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600(2-2-2)
Yes
-5B
Notes:
Yes
Yes
Yes
-6/-6T
Yes
Yes
Yes
Yes
-75E
Yes
Yes
Yes
Yes
Yes
-75Z
Yes
Yes
Yes
Yes
Yes
Yes
-75
Yes
Yes
Yes
Yes
Yes
Yes
-75
1. The -5B device is backward compatible with all slower speed grades. The voltage range of
-5B device operating at slower speed grades is V
DD
= V
DD
Q = 2.5V ± 0.2V.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Features
Figure 1:
256Mb DDR SDRAM Part Numbers
Example Part Number: M T 4 6 V 1 6 M 1 6 P - 6 T: F
-
MT46V
Configuration
Package
Speed
:
Sp.
Op. Temp. Revision
Configuration
64 Meg x 4
32 Meg x 8
16 Meg x 16
Package
400-mil TSOP
400-mil TSOP (Pb-free)
8mm x 14mm FBGA
8mm x 14mm FBGA (Pb-free)
8mm x 12.5mm FBGA
8mm x 12.5mm FBGA (Pb-free)
TG
P
FG
BG
CV
CY
IT
AT
Revision
64M4
32M8
16M16
:F
x16
:G
x4, x8
:K
x4, x8, x16
Operating Temp.
Commercial
Industrial
Automotive
Special Options
Standard
L
Low power
-5B
-6
-6T
-75E
-75Z
-75
Speed Grade
tCK = 5ns, CL = 3
tCK = 6ns, CL = 2.5
tCK = 6ns, CL = 2.5
tCK = 7.5ns, CL = 2
tCK = 7.5ns, CL = 2
tCK = 7.5ns, CL = 2.5
FBGA Part Marking System
Due to space limitations, FBGA-packaged components have an abbreviated part
marking that is different from the part number. For a quick conversion of an FBGA code,
see the FBGA Part Marking Decoder on Micron’s Web site:
www.micron.com.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Table of Contents
Table of Contents
State Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
General Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Automotive Tempature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Functional Block Diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Pin and Ball Assignments and Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Electrical Specifications – DC and AC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45
DESELECT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
NO OPERATION (NOP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
LOAD MODE REGISTER (LMR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
ACTIVE (ACT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50
READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
PRECHARGE (PRE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
BURST TERMINATE (BST) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
AUTO REFRESH (AR). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54
INITIALIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54
REGISTER DEFINITION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57
ACTIVE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61
READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74
PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .87
AUTO REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89
SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90
Power-down (CKE Not Active) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .92
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDRTOC.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
State Diagram
State Diagram
Figure 2:
Simplified State Diagram
Power
applied
Power
on
PRE
Precharge
all
banks
LMR
Self
refresh
REFS
LMR
REFSX
Idle
REFA
all
banks
precharged
CKEL
CKEH
MR
EMR
Auto
refresh
Active
power-
down
ACT
CKE
HIGH
Precharge
power-
down
CKE
LOW
Row
active
WRITE
WRITE
WRITE A
Write
READ A
READ
READ
BST
READ
Burst
stop
Read
WRITE A
PRE
READ A
PRE
PRE
READ A
Write A
Read A
PRE
Precharge
PREALL
Automatic sequence
Command
sequence
ACT = ACTIVE
BST = BURST TERMINATE
CKEH
= Exit power-down
CKEL
= Enter power-down
EMR = Extended mode register
LMR = LOAD MODE REGISTER
MR = Mode register
PRE = PRECHARGE
PREALL = PRECHARGE all
banks
READ A = READ with auto precharge
REFA = AUTO REFRESH
REFS = Enter self refresh
REFSX = Exit self refresh
WRITE A = WRITE with auto precharge
Note:
This diagram represents operations within a single bank only and does not capture concur-
rent operations in other banks.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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