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MT46V64M4P-5BAT:G

16M X 16 DDR DRAM, 0.7 ns, PDSO66
16M × 16 双倍速率同步动态随机存储器 动态随机存取存储器, 0.7 ns, PDSO66

器件类别:存储   

厂商名称:Micron(美光)

厂商官网:http://www.micron.com/

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器件参数
参数名称
属性值
功能数量
1
端子数量
66
最大工作温度
70 Cel
最小工作温度
0.0 Cel
最大供电/工作电压
2.7 V
最小供电/工作电压
2.5 V
额定供电电压
2.6 V
最小存取时间
0.7000 ns
加工封装描述
0.40 INCH, 铅 FREE,塑料, TSOP-66
无铅
Yes
欧盟RoHS规范
Yes
状态
DISCONTINUED
工艺
CMOS
包装形状
矩形的
包装尺寸
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
表面贴装
Yes
端子形式
GULL WING
端子间距
0.6500 mm
端子涂层
MATTE 锡
端子位置
包装材料
塑料/环氧树脂
温度等级
COMMERCIAL
内存宽度
16
组织
16M × 16
存储密度
2.68E8 deg
操作模式
同步
位数
1.68E7 words
位数
16M
存取方式
四 BANK PAGE BURST
内存IC类型
双倍速率同步动态随机存储器 动态随机存取存储器
端口数
1
文档预览
256Mb: x4, x8, x16 DDR SDRAM
Features
Double Data Rate (DDR) SDRAM
MT46V64M4 – 16 Meg x 4 x 4 banks
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR400)
• Bidirectional data strobe (DQS) transmitted/
received with data, that is, source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths (BL): 2, 4, or 8
• Auto refresh
64ms, 8192-cycle(Commercial & Industrial)
16ms, 8192-cycle (Automotive)
• Self refresh (not available on AT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2-compatible)
• Concurrent auto precharge option supported
t
RAS lockout supported (
t
RAP =
t
RCD)
Options
Marking
• Configuration
64 Meg x 4 (16 Meg x 4 x 4 banks)
64M4
32 Meg x 8 (8 Meg x 8 x 4 banks)
32M8
16 Meg x 16 (4 Meg x 16 x 4 banks)
16M16
• Plastic package – OCPL
66-pin TSOP
TG
66-pin TSOP (Pb-free)
P
• Plastic package
FG
1
60-ball FBGA (8mm x 14mm)
BG
1
60-ball FBGA (8mm x 14mm) (Pb-free)
CV
2
60-ball FBGA (8mm x 12.5mm)
CY
2
60-ball FBGA (8mm x 12.5mm)
(Pb-free)
• Timing – cycle time
5ns @ CL = 3 (DDR400B)
-5B
6ns @ CL = 2.5 (DDR333) FBGA only
-6
6ns @ CL = 2.5 (DDR333) TSOP only
-6T
-75E
1
7.5ns @ CL = 2 (DDR266)
-75Z
1
7.5ns @ CL = 2 (DDR266A)
-75
1
7.5ns @ CL = 2.5 (DDR266B)
• Self refresh
Standard
None
Low-power self refresh
L
• Temperature rating
Commercial (0°C to +70°C)
None
Industrial (–40°C to +85°C)
IT
Automotive (–40°C to +105°C)
AT
4
• Revision
:G
3
x4, x8
:F
3
x16
x4, x8, x16
:K
Notes: 1. Only available on Revision F and G.
2. Only available on Revision K.
3. Not recommended for new designs.
4. Contact Micron for availability.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
256Mb: x4, x8, x16 DDR SDRAM
Features
Table 1:
Key Timing Parameters
CL = CAS (READ) latency; MIN clock rate with 50% duty cycle at CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and
CL = 3 (-5B)
Clock Rate (MHz)
Speed Grade
-5B
-6
6T
-75E/-75Z
-75
CL = 2
133
133
133
133
100
CL = 2.5
167
167
167
133
133
CL = 3
200
n/a
n/a
n/a
n/a
Data-Out Window Access Window DQS–DQ Skew
1.6ns
±0.70ns
+0.40ns
2.1ns
±0.70ns
+0.40ns
2.0ns
±0.70ns
+0.45ns
2.5ns
±0.75ns
+0.50ns
2.5ns
±0.75ns
+0.50ns
Table 2:
Parameter
Addressing
64 Meg x 4
16 Meg x 4 x 4 banks
8K
8K (A0–A12)
4 (BA0, BA1)
2K (A0–A9, A11)
32 Meg x 8
8 Meg x 8 x 4 banks
8K
8K (A0–A12)
4 (BA0, BA1)
1K (A0–A9)
16 Meg x 16
4 Meg x 16 x 4 banks
8K
8K (A0–A12)
4 (BA0, BA1)
512 (A0–A8)
Configuration
Refresh count
Row address
Bank address
Column address
Table 3:
Marking
-5B
1
-6
-6T
-75E
-75Z
-75
Speed Grade Compatibility
PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600(2-2-2)
Yes
-5B
Notes:
Yes
Yes
Yes
-6/-6T
Yes
Yes
Yes
Yes
-75E
Yes
Yes
Yes
Yes
Yes
-75Z
Yes
Yes
Yes
Yes
Yes
Yes
-75
Yes
Yes
Yes
Yes
Yes
Yes
-75
1. The -5B device is backward compatible with all slower speed grades. The voltage range of
-5B device operating at slower speed grades is V
DD
= V
DD
Q = 2.5V ± 0.2V.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Features
Figure 1:
256Mb DDR SDRAM Part Numbers
Example Part Number: M T 4 6 V 1 6 M 1 6 P - 6 T: F
-
MT46V
Configuration
Package
Speed
:
Sp.
Op. Temp. Revision
Configuration
64 Meg x 4
32 Meg x 8
16 Meg x 16
Package
400-mil TSOP
400-mil TSOP (Pb-free)
8mm x 14mm FBGA
8mm x 14mm FBGA (Pb-free)
8mm x 12.5mm FBGA
8mm x 12.5mm FBGA (Pb-free)
TG
P
FG
BG
CV
CY
IT
AT
Revision
64M4
32M8
16M16
:F
x16
:G
x4, x8
:K
x4, x8, x16
Operating Temp.
Commercial
Industrial
Automotive
Special Options
Standard
L
Low power
Speed Grade
-5B
-6
-6T
-75E
-75Z
-75
tCK = 5ns, CL = 3
tCK = 6ns, CL = 2.5
tCK = 6ns, CL = 2.5
tCK = 7.5ns, CL = 2
tCK = 7.5ns, CL = 2
tCK = 7.5ns, CL = 2.5
FBGA Part Marking System
Due to space limitations, FBGA-packaged components have an abbreviated part
marking that is different from the part number. For a quick conversion of an FBGA code,
see the FBGA Part Marking Decoder on Micron’s Web site:
www.micron.com.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Table of Contents
Table of Contents
State Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
General Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Automotive Tempature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Functional Block Diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Pin and Ball Assignments and Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Electrical Specifications – DC and AC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45
DESELECT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
NO OPERATION (NOP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
LOAD MODE REGISTER (LMR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
ACTIVE (ACT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50
READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
PRECHARGE (PRE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
BURST TERMINATE (BST) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
AUTO REFRESH (AR). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54
INITIALIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54
REGISTER DEFINITION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57
ACTIVE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61
READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74
PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .87
AUTO REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89
SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90
Power-down (CKE Not Active) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .92
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDRTOC.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
State Diagram
State Diagram
Figure 2:
Simplified State Diagram
Power
applied
Power
on
PRE
Precharge
all
banks
LMR
Self
refresh
REFS
LMR
REFSX
Idle
REFA
all
banks
precharged
CKEL
CKEH
MR
EMR
Auto
refresh
Active
power-
down
ACT
CKE
HIGH
Precharge
power-
down
CKE
LOW
Row
active
WRITE
WRITE
WRITE A
Write
READ A
READ
READ
BST
READ
Burst
stop
Read
WRITE A
PRE
READ A
PRE
PRE
READ A
Write A
Read A
PRE
Precharge
PREALL
Automatic sequence
Command
sequence
ACT = ACTIVE
BST = BURST TERMINATE
CKEH
= Exit power-down
CKEL
= Enter power-down
EMR = Extended mode register
LMR = LOAD MODE REGISTER
MR = Mode register
PRE = PRECHARGE
PREALL = PRECHARGE all
banks
READ A = READ with auto precharge
REFA = AUTO REFRESH
REFS = Enter self refresh
REFSX = Exit self refresh
WRITE A = WRITE with auto precharge
Note:
This diagram represents operations within a single bank only and does not capture concur-
rent operations in other banks.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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