型号
- 型号
- 关键词
DDR DRAM, 32MX8, 0.6ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60
厂商名称：Micron Technology
厂商官网：http://www.mdtic.com.tw/
器件标准：
| 型号 | MT47H32M8FP-5 | MT47H16M16FG-37E | MT47H32M8FP-5E | MT47H32M8FP-37E | MT47H64M4FP-37E | MT47H16M16FG-5 | MT47H64M4FP-5E |
|---|---|---|---|---|---|---|---|
| 描述 | DDR DRAM, 32MX8, 0.6ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 | DDR DRAM, 32MX8, 0.6ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 | DDR DRAM, 32MX8, 0.5ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 | DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 | DDR DRAM, 64MX4, 0.6ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 |
| 是否Rohs认证 | 符合 | 不符合 | 符合 | 符合 | 符合 | 不符合 | 符合 |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | TFBGA, BGA60,9X11,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA60,9X11,32 | TFBGA, BGA60,9X11,32 | TFBGA, BGA60,9X11,32 | 8 X 14 MM, FBGA-84 | TFBGA, BGA60,9X11,32 |
| 针数 | 60 | 84 | 60 | 60 | 60 | 84 | 60 |
| Reach Compliance Code | compliant | not_compliant | unknown | compliant | compliant | not_compliant | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 0.6 ns | 0.5 ns | 0.6 ns | 0.5 ns | 0.5 ns | 0.6 ns | 0.6 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 200 MHz | 266 MHz | 200 MHz | 266 MHz | 267 MHz | 200 MHz | 200 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| 交错的突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
| JESD-30 代码 | R-PBGA-B60 | R-PBGA-B84 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B84 | R-PBGA-B60 |
| JESD-609代码 | e1 | e0 | e1 | e1 | e1 | e0 | e1 |
| 长度 | 12 mm | 14 mm | 12 mm | 12 mm | 12 mm | 14 mm | 12 mm |
| 内存密度 | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bi |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 8 | 16 | 8 | 8 | 4 | 16 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 60 | 84 | 60 | 60 | 60 | 84 | 60 |
| 字数 | 33554432 words | 16777216 words | 33554432 words | 33554432 words | 67108864 words | 16777216 words | 67108864 words |
| 字数代码 | 32000000 | 16000000 | 32000000 | 32000000 | 64000000 | 16000000 | 64000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 组织 | 32MX8 | 16MX16 | 32MX8 | 32MX8 | 64MX4 | 16MX16 | 64MX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
| 封装等效代码 | BGA60,9X11,32 | BGA84,9X15,32 | BGA60,9X11,32 | BGA60,9X11,32 | BGA60,9X11,32 | BGA84,9X15,32 | BGA60,9X11,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 | 235 | 260 | 260 | 260 | 235 | 260 |
| 电源 | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES | YES |
| 连续突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
| 最大待机电流 | 0.007 A | 0.009 A | 0.007 A | 0.009 A | 0.009 A | 0.007 A | 0.007 A |
| 最大压摆率 | 0.2 mA | 0.24 mA | 0.23 mA | 0.24 mA | 0.24 mA | 0.2 mA | 0.23 mA |
| 最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| 宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
| 是否无铅 | 不含铅 | 含铅 | 不含铅 | 不含铅 | 不含铅 | - | 不含铅 |
| 厂商名称 | Micron Technology | - | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |