NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36
3.3V I/O, FLOW-THROUGH ZBT SRAM
2Mb
ZBT
®
SRAM
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High frequency and 100 percent bus utilization
Fast cycle times: 10ns and 12ns
Single +3.3V ±5% power supply
Advanced control logic for minimum control signal
interface
Individual BYTE WRITE controls may be tied LOW
Single R/W# (read/write) control pin
CKE# pin to enable clock and suspend operations
Three chip enables for simple depth expansion
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed, fully coherent WRITE
Internally self-timed, registered outputs eliminate
the need to control OE#
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Linear or Interleaved Burst Modes
Burst feature (optional)
100-pin TQFP package
Pin/function compatibility with 4Mb, 8Mb, and
16Mb ZBT SRAM
Automatic power-down
MT55L128L18F1,
MT55L64L32F1, MT55L64L36F1
3.3V V
DD
, 3.3V I/O
100-Pin TQFP**
**JEDEC-standard MS-026 BHA (LQFP).
GENERAL DESCRIPTION
The Micron
®
Zero Bus Turnaround
™
(ZBT
®
) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
The MT55L128L18F1 and MT55L64L32/36F1
SRAMs integrate a 128K x 18, 64K x 32, or 64K x 36 SRAM
core with advanced synchronous peripheral circuitry
and a 2-bit burst counter. These SRAMs are optimized
for 100 percent bus utilization, eliminating turnaround
cycles for READ to WRITE, or WRITE to READ, transi-
tions. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single clock in-
put (CLK). The synchronous inputs include all ad-
dresses, all data inputs, chip enable (CE#), two addi-
tional chip enables for easy depth expansion (CE2,
CE2#), cycle start input (ADV/LD#), synchronous clock
enable (CKE#), byte write enables (BWa#, BWb#, BWc#
and BWd#) and read/write (R/W#).
Asynchronous inputs include the output enable
(OE#, which may be tied LOW for control signal minimi-
zation), clock (CLK) and snooze enable (ZZ, which may
be tied LOW if unused). There is also a burst mode pin
(MODE) that selects between interleaved and linear
burst modes. MODE may be tied HIGH, LOW or left
unconnected if burst is unused. The flow-through data-
out (Q) is enabled by OE#. WRITE cycles can be from
one to four bytes wide as controlled by the write control
inputs.
OPTIONS
• Timing (Access/Cycle/MHz)
7.5ns/10ns/100 MHz
9ns/12ns/83 MHz
• Configurations
128K x 18
64K x 32
64K x 36
• Package
100-pin TQFP
• Temperature
Commercial (0°C to +70°C)
Part Number Example:
MARKING*
-10
-12
MT55L128L18F1
MT55L64L32F1
MT55L64L36F1
T
None
MT55L128L18F1T-10
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
1
©2002, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36
3.3V I/O, FLOW-THROUGH ZBT SRAM
FUNCTIONAL BLOCK DIAGRAM
128K x 18
17
SA0, SA1, SA
MODE
CLK
CKE#
K
CE
ADDRESS
REGISTER
17
SA1
D1
SA0
D0
ADV/LD#
K
WRITE ADDRESS
REGISTER
15
Q1 SA1'
SA0'
Q0
17
17
O
U
T
P
U
T
B
U
F
F
E
R
S
E
17
BURST
LOGIC
ADV/LD#
BWa#
BWb#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
18
128K x 9 x 2
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
D
A
T
A
S
T
E
E
R
I
N
G
18
DQs
DQPa
DQPb
OE#
CE#
CE2
CE2#
18
READ LOGIC
INPUT
E
REGISTER
18
FUNCTIONAL BLOCK DIAGRAM
64K x 32/36
16
SA0, SA1, SA
MODE
CLK
CKE#
K
CE
ADV/LD#
K
WRITE ADDRESS
REGISTER
ADDRESS
REGISTER
16
SA1
D1
SA0
D0
14
Q1 SA1'
SA0'
Q0
16
16
O
U
T
P
U
T
B
U
F
F
E
R
S
E
16
BURST
LOGIC
ADV/LD#
BWa#
BWb#
BWc#
BWd#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
36
64K x 8 x 4
(x32)
WRITE
DRIVERS
64K x 9 x 4
(x36)
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
D
A
T
A
S
T
E
E
R
I
N
G
36
DQs
DQPa
DQPb
DQPc
DQPd
36
OE#
CE#
CE2
CE2#
INPUT
E
REGISTER
36
READ LOGIC
NOTE:
Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions and timing diagrams
for detailed information.
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36
3.3V I/O, FLOW-THROUGH ZBT SRAM
GENERAL DESCRIPTION (continued)
All READ, WRITE and DESELECT cycles are initi-
ated by the ADV/LD# input. Subsequent burst ad-
dresses can be internally generated as controlled by
the burst advance pin (ADV/LD#). Use of burst mode
is optional. It is allowable to give an address for each
individual READ and WRITE cycle. BURST cycles wrap
around after the fourth access from a base address.
To allow for continuous, 100 percent use of the data
bus, the flow-through ZBT SRAM uses a LATE WRITE
cycle. For example, if a WRITE cycle begins in clock
cycle one, the address is present on rising edge one.
BYTE WRITEs need to be asserted on the same cycle as
the address. The write data associated with the ad-
dress is required one cycle later, or on the rising edge of
clock cycle two.
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes
to be written. During a BYTE WRITE cycle, BWa# con-
trols DQa pins; BWb# controls DQb pins; BWc# controls
DQc pins; and BWd# controls DQd pins. Cycle types
can only be defined when an address is loaded, i.e.,
when ADV/LD# is LOW. Parity/ECC bits are only avail-
able on the x18 and x36 versions.
Micron’s 2Mb ZBT SRAMs operate from a +3.3V V
DD
power supply, and all inputs and outputs are LVTTL-
compatible. The device is ideally suited for systems
requiring high bandwidth and zero bus turnaround
delays.
Please refer to Micron’s Web site (www.micron.com/
sramds)
for the latest data sheet.
PIN ASSIGNMENT TABLE
PIN # x18
x32
1
NC
NC
2
NC
DQc
3
NC
DQc
4
V
DD
Q
5
V
SS
6
NC
DQc
7
NC
DQc
8
DQb
DQc
9
DQb
DQc
10
V
SS
11
V
DD
Q
12
DQb
DQc
13
DQb
DQc
14
V
SS
15
V
DD
16
V
DD
17
V
SS
18
DQb
DQd
19
DQb
DQd
20
V
DD
Q
21
V
SS
22
DQb
DQd
23
DQb
DQd
24
DQPb DQd
25
NC
DQd
x36
DQPc
DQc
DQc
PIN #
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
x18
x32
x36
V
SS
V
DD
Q
NC
DQd
DQd
NC
DQd
DQd
NC
NC
DQPd
MODE (LBO#)
SA
SA
SA
SA
SA1
SA0
DNU
DNU
V
SS
V
DD
DNU
DNU
SA
SA
SA
SA
SA
SA
NC/SA*
PIN # x18
x32
x36
51
NC
NC
DQPa
52
NC
DQa
DQa
53
NC
DQa
DQa
54
V
DD
Q
55
V
SS
56
NC
DQa
DQa
57
NC
DQa
DQa
58
DQa
59
DQa
60
V
SS
61
V
DD
Q
62
DQa
63
DQa
64
ZZ
65
V
DD
66
V
SS
67
V
SS
68
DQa
DQb
DQb
69
DQa
DQb
DQb
70
V
DD
Q
71
V
SS
72
DQa
DQb
DQb
73
DQa
DQb
DQb
74
DQPa DQb
DQb
75
NC
DQb
DQb
PIN #
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
x18
x32
x36
V
SS
V
DD
Q
DQb
DQb
DQb
DQb
NC
DQPb
SA
SA
NF*
NF*
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc# BWc#
BWd# BWd#
CE2
CE#
SA
SA
NC
NC
SA
DQc
DQc
DQc
DQc
DQc
DQc
DQd
DQd
NC
NC
DQd
DQd
DQd
DQd
* Pins 50, 83, and 84 are reserved for address expansion.
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36
3.3V I/O, FLOW-THROUGH ZBT SRAM
PIN ASSIGNMENT (Top View)
100-Pin TQFP
SA
NC
NC
V
DD
Q
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
V
SS
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
NF**
NF**
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
NC/SA**
SA
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
SA
SA
NF**
NF**
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NC/DQPb*
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
SS
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NC/DQPa*
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
DD
V
DD
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQPb
NC
V
SS
V
DD
Q
NC
NC
NC
x32/x36
NC/SA**
SA
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
* NC for x32 version, DQPx for x36 version.
** Pins 50, 83 and 84 are reserved for address expansion.
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
NC/DQPc*
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
SS
V
DD
V
DD
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NC/DQPd*
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36
3.3V I/O, FLOW-THROUGH ZBT SRAM
PIN DESCRIPTIONS
TQFP (x18)
37
36
32–35, 44–49,
80–82, 99, 100
TQFP (x32/x36)
37
36
32–35, 44–49,
81, 82, 99, 100
SYMBOL
SA0
SA1
SA
TYPE
Input
DESCRIPTION
Synchronous Address Inputs: These inputs are
registered and must meet the setup and hold times
around the rising edge of CLK. Pins 50, 83, and 84 are
reserved as address bits for the higher-density 4Mb,
8Mb, and 16Mb ZBT SRAMs, respectively. SA0 and SA1
are the two least significant bits (LSB) of the address
field and set the internal burst counter if burst is
desired.
Synchronous Byte Write Enables: These active LOW inputs
allow individual bytes to be written when a WRITE cycle is
active and must meet the setup and hold times around
the rising edge of CLK. BYTE WRITEs need to be asserted
on the same cycle as the address. BWa# controls DQa pins;
BWb# controls DQb pins; BWc# controls DQc pins; BWd#
controls DQd pins.
Clock: This signal registers the address, data, chip enables,
byte write enables and burst control inputs on its rising
edge. All synchronous inputs must meet setup and hold
times around the clock’s rising edge.
Synchronous Chip Enable: This active LOW input is used to
enable the device and is sampled only when a new
external address is loaded (ADV/LD# LOW).
Synchronous Chip Enable: This active LOW input is used to
enable the device and is sampled only when a new
external address is loaded (ADV/LD# LOW). This input can
be used for memory depth expansion.
Synchronous Chip Enable: This active HIGH input is used to
enable the device and is sampled only when a new
external address is loaded (ADV/LD# LOW). This input can
be used for memory depth expansion.
Output Enable: This active LOW, asynchronous input
enables the data I/O output drivers. G# is the JEDEC-
standard term for OE#.
Synchronous Address Advance/Load: When HIGH, this
input is used to advance the internal burst counter,
controlling burst access after the external address is
loaded. When ADV/LD# is HIGH, R/W# is ignored. A LOW
on ADV/LD# clocks a new address at the CLK rising edge.
Synchronous Clock Enable: This active LOW input permits
CLK to propagate throughout the device. When CKE# is
HIGH, the device ignores the CLK input and effectively
internally extends the previous CLK cycle. This input must
meet setup and hold times around the rising edge of CLK.
Snooze Enable: This active HIGH, asynchronous input
causes the device to enter a low-power standby mode in
which all data in the memory array is retained. When ZZ is
active, all other inputs are ignored.
93
94
–
–
93
94
95
96
BWa#
BWb#
BWc#
BWd#
Input
89
89
CLK
Input
98
98
CE#
Input
92
92
CE2#
Input
97
97
CE2
Input
86
86
OE#
(G#)
ADV/LD#
Input
85
85
Input
87
87
CKE#
Input
64
64
ZZ
Input
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
模拟电子
