OBSOLETE
MT5C1008
128K x 8 SRAM
SRAM
FEATURES
• High speed: 12, 15, 20 and 25
• Available in 300 mil- and 400 mil-wide SOJ packages
• High-performance, low-power, CMOS double-metal
process
• Single +5V
±10%
power supply
• Easy memory expansion with
/
C
?
E1, CE2 and
?
OE
/
options
• All inputs and outputs are TTL-compatible
• Fast
/
O
/
E access time: 6ns
128K x 8 SRAM
WITH OUTPUT ENABLE
PIN ASSIGNMENT (Top View)
32-Pin DIP
(SA-6)
NC
A16
A14
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ8
DQ7
DQ6
DQ5
DQ4
32-Pin SOJ
(SD-4, SD-5)
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ8
DQ7
DQ6
DQ5
DQ4
OPTIONS
• Timing
12ns access
15ns access
20ns access
25ns access
• Packages
Plastic DIP (400 mil)
Plastic SOJ (400 mil)
Plastic SOJ (300 mil)
MARKING
-12
-15
-20
-25
None
DJ
SJ
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
• 2V data retention (optional)
L
• 2V data retention, low power (optional) LP
• Temperature
Commercial (0°C to +70°C)
Industrial
(-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended
(-55°C to +125°C)
None
IT
AT
XT
• Part Number Example: MT5C1008DJ-20 L
NOTE: Not all combinations of operating temperature, speed, data retention
and low power are necessarily available. Please contact the factory for availabil-
ity of specific part number combinations.
GENERAL DESCRIPTION
The MT5C1008 is organized as a 131,072 x 8 SRAM using
a four-transistor memory cell with a high-speed, low-power
CMOS process. Micron SRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micron offers dual chip enables (/C
?
E1, CE2) and an output
enable (?O
/
E). This enhancement can place the outputs in
High-Z for additional flexibility in system design.
MT5C1008
S17.pm5 – Rev. 1/95
Writing to these devices is accomplished when write
enable (?W
/
E) and C
?
E1 inputs are both LOW and CE2 is
/
HIGH. Reading is accomplished when
?
W
/
E and CE2 remain
HIGH and
/
C
?
E1 and O
/
E go LOW. The device offers reduced
?
power standby modes when disabled. This allows system
designers to meet low standby power requirements.
The “L” and “LP” versions each provide a 70% reduction
in CMOS standby current (I
SB
2
) over the standard version.
The “LP” version also provides a 90% reduction in TTL
standby current (I
SB
1
). This is achieved by including gated
inputs on the
?
W
/
E,
?
O
/
E and address lines. The gated inputs
also facilitate the design of battery backed systems where
the designer needs to protect against inadvertent battery
current drain during power-down, when inputs may be at
undefined levels.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL-compatible.
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1995,
Micron Technology, Inc.
OBSOLETE
MT5C1008
128K x 8 SRAM
FUNCTIONAL BLOCK DIAGRAM
Vcc
GND
DQ8
ADDRESS DECODER
A0-A16
1,048,576-BIT
MEMORY ARRAY
I/O CONTROL
DQ1
CE1
CE2
OE
WE
POWER
DOWN
TRUTH TABLE
MODE
STANDBY
STANDBY
READ
NOT SELECTED
WRITE
/
O
/
E
X
X
L
H
X
/
C
?
E 1
H
X
L
L
L
CE2
X
L
H
H
H
?
W
/
E
X
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
STANDBY
ACTIVE
ACTIVE
ACTIVE
MT5C1008
S17.pm5 – Rev. 1/95
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1995,
Micron Technology, Inc.
OBSOLETE
MT5C1008
128K x 8 SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
CC
Supply Relative to V
SS
.............. -1V to +7V
Storage Temperature (plastic) .................... -55°C to +150°C
Power Dissipation ............................................................. 1W
Short Circuit Output Current ..................................... 50mA
Voltage on Any Pin Relative to V
SS
............ -1V to V
CC
+1V
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(0°C
≤
T
A
≤
70°C; Vcc = 5V
±10%)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
0V
≤
V
IN
≤
V
CC
Output(s) disabled
0V
≤
V
OUT
≤
V
CC
I
OH
= -4.0mA
I
OL
= 8.0mA
CONDITIONS
SYMBOL
V
IH
V
IL
IL
I
IL
O
V
OH
V
OL
V
CC
4.5
MIN
2.2
-0.5
-5
-5
2.4
0.4
5.5
MAX
V
CC
+1
0.8
5
5
UNITS
V
V
µA
µA
V
V
V
1
1
1
NOTES
1
1, 2
MAX
DESCRIPTION
Power Supply
Current: Operating
CONDITIONS
CE2
≥
V
IH
;
/
C
?
E1
≤
V
IL
;
V
CC
= MAX
f = MAX = 1/
t
RC
outputs open
CE2
≤
V
IH
or
/
C
?
E1
≥
V
IH
;
V
CC
= MAX
f = MAX = 1/
t
RC
outputs open
LP version only
CE2
≤
V
SS
+0.2V;
/
C
?
E1
≥
V
CC
-0.2V; V
CC
= MAX
V
IN
≤
V
SS
+0.2V or
V
IN
≥
V
CC
-0.2V; f = 0
L and LP
versions only
SYMBOL
I
CC
TYP
107
-12
195
-15
170
-20
145
-25
130
UNITS
mA
NOTES
3, 14
Power Supply
Current: Standby
I
SB
1
37
75
65
50
45
mA
14
I
SB
1
I
SB
2
1.3
0.4
3
5
3
5
3
5
3
5
mA
mA
14
14
I
SB
2
0.3
1.5
1.5
1.5
1.5
mA
14
CAPACITANCE
DESCRIPTION
Input Capacitance
Output Capacitance
MT5C1008
S17.pm5 – Rev. 1/95
CONDITIONS
T
A
= 25°C; f = 1 MHz
V
CC
= 5V
SYMBOL
C
I
C
O
MAX
6
6
UNITS
pF
pF
NOTES
4
4
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1995,
Micron Technology, Inc.
OBSOLETE
MT5C1008
128K x 8 SRAM
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (0°C
≤
T
A
≤
70°C; V
CC
= 5V
±10%)
DESCRIPTION
READ Cycle
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE Cycle
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
-12
SYM
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
t
AOE
t
LZOE
t
HZOE
t
WC
t
CW
t
AW
t
AS
t
AH
t
WP1
t
WP2
t
DS
t
DH
t
LZWE
t
HZWE
-15
MAX
MIN
15
12
12
15
15
3
5
6
6
0
12
5
15
6
0
4
5
15
10
10
0
0
9
12
7
0
3
6
6
20
12
12
0
0
12
15
8
0
3
0
0
3
5
MAX
MIN
20
-20
MAX
MIN
25
20
20
5
5
8
0
20
6
0
6
25
15
15
0
0
15
15
10
0
3
8
-25
MAX
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MIN
12
25
25
3
3
0
10
25
8
10
7
6, 7
0
6
12
8
8
0
0
8
10
6
0
3
10
7
6, 7
MT5C1008
S17.pm5 – Rev. 1/95
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1995,
Micron Technology, Inc.
OBSOLETE
IT SPECIFICATION
MT5C1008
128K x 8 SRAM
INDUSTRIAL TEMPERATURE SPECIFICATIONS (IT)
The following specifications are to be used for Industrial Temperature (IT) MT5C1001 SRAMs.
(-40°C
≤
T
A
≤
85°C)
MAX
DESCRIPTION
Power Supply
Current: Operating
CONDITIONS
CE2
≥
V
IH
;
/
C
?
E
/
1
≤
V
IL
;
V
CC
= MAX
f = MAX = 1/
t
RC
outputs open
CE2
≤
V
IH
or
/
C
?
E
/
1
≥
V
IH
;
V
CC
= MAX
f = MAX = 1/
t
RC
outputs open
CE2
≤
V
IH
or
/
C
?
E
/
1
≥
V
IH
;
V
CC
= MAX
f = MAX = 1/
t
RC
outputs open
CE2
≤
V
SS
+0.2V;
/
C
/
E
/
1
≥
V
CC
-0.2V; V
CC
= MAX
V
IN
≤
V
SS
+0.2V or
V
IN
≥
V
CC
-0.2V; f = 0
L version and
LP version
CE2
≤
V
SS
+0.2V;
/
C
/
E
/
1
≥
V
CC
-0.2V; V
CC
= MAX
V
IN
≤
V
SS
+0.2V or
V
IN
≥
V
CC
-0.2V; f = 0
SYMBOL
I
CC
TYP
107
-20
155
-25
140
UNITS
mA
NOTES
3, 13
Power Supply
Current: Standby
I
SB
1
37
50
45
mA
13
LP version only
I
SB
1
1.3
6
6
mA
13
I
SB
2
0.4
6
6
mA
13
I
SB
2
0.3
2
2
mA
13
DATA RETENTION ELECTRICAL CHARACTERISTICS (L version only)
DESCRIPTION
Data Retention Current
CONDITIONS
/
C
/
E
/
1
≥
(Vcc -0.2V) or V
CC
= 2V
CE2
≤
(Vss +0.2V)
V
IN
≥
(V
CC
-0.2V)
V
CC
= 3V
or
≤
0.2V
SYMBOL
I
CCDR
I
CCDR
MIN
TYP
35
60
MAX
170
325
UNITS
µA
µA
NOTES
14
14
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
Refer to commercial temperature timing parameters for specifications not listed here.
(Notes 5, 14) (-40°C
≤
T
A
≤
85°C; V
CC
= 5V
±10%)
DESCRIPTION
WRITE Cycle
Address hold from end of write
Address setup time
-20
SYM
t
AH
t
AS
-25
MAX
MIN
1
1
MAX
UNITS
ns
ns
NOTES
MIN
1
1
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-40°C
≤
T
A
≤
85°C; Vcc = 5V
±10%)
DESCRIPTION
Input High (Logic 1) Voltage
MT5C1008
S17.pm5 – Rev. 1/95
CONDITIONS
SYMBOL
V
IH
MIN
2.3
MAX
V
CC
+1
UNITS
V
NOTES
1
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1995,
Micron Technology, Inc.
模拟电子
