CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 1/9
MTB5D0P03Q8
Features
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free and halogen-free package
BV
DSS
I
D@
V
GS
=-10V, T
A
=25°C
I
D@
V
GS
=-4.5V, T
A
=25°C
I
D@
V
GS
=-10V, T
C
=25°C
I
D@
V
GS
=-4.5V, T
C
=25°C
R
DSON
@V
GS
=-10V, I
D
=-20A
R
DSON
@V
GS
=-4.5V, I
D
=-17A
-30V
-20A
-16A
-28A
-22A
3.0mΩ(typ)
4.2mΩ(typ)
Equivalent Circuit
MTB5D0P03Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTB5D0P03Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25
°C
, V
GS
=-10V
Continuous Drain Current @T
A
=70
°C
, V
GS
=-10V
Continuous Drain Current @T
A
=25
°C
, V
GS
=-4.5V
Continuous Drain Current @T
A
=70
°C
, V
GS
=-4.5V
Continuous Drain Current @T
C
=25
°C
, V
GS
=-10V
Continuous Drain Current @T
C
=100
°C
, V
GS
=-10V
Continuous Drain Current @T
C
=25
°C
, V
GS
=-4.5V
Continuous Drain Current @T
C
=100
°C
, V
GS
=-4.5V
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=-50A, V
DD
=-25V
T
C
=25
°C
Power Dissipation
T
C
=100
°C
T
A
=25
°C
Power Dissipation
(Note 2)
T
A
=70
°C
Operating Junction and Storage Temperature Range
Note : 1.Pulse width limited by maximum junction temperature.
2.
Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 2/9
Symbol
BV
DSS
V
GS
I
DSM
Limits
-30
±25
-20
-16
-16
-12.8
-28
-17.7
-22
-13.9
-120
-50
125
6.3
2.5
3.1
2
-55~+150
Unit
V
A
I
D
I
DM
I
AS
E
AS
P
D
P
DSM
Tj ; Tstg
mJ
W
°C
Thermal Resistance Ratings
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
(Note)
Symbol
R
θJC
R
θJA
Maximum
20
40
Unit
°C / W
Note : When mounted on a 1 in
2
pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad. The value in any
given application depends on the user’s specific board design.
Electrical Characteristics
(Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Static
BV
DSS
ΔBV
DSS
/ΔTj
V
GS(th)
I
GSS
I
DSS
I
DSS
R
DS(ON)
MTB5D0P03Q8
Test Conditions
V
GS
=0V, I
D
=-250μA
I
D
=-250μA, referenced to 25
°
C
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±25V, V
DS
=0V
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0, Tj=125°C
I
D
=-20A, V
GS
=-10V
I
D
=-17A, V
GS
=-4.5V
CYStek Product Specification
(Note 1)
-30
-
-1
-
-
-
-
-
-
-12
-
-
-
-
3
4.2
-
-
-2.5
±100
-1
-10
4.5
6.5
V
mV/
°
C
V
nA
μA
mΩ
CYStech Electronics Corp.
Symbol
G
FS
Dynamic
Ciss
Coss
Crss
t
d(ON)
(Note 1&2)
t
r
(Note 1&2)
t
d(OFF)
(Note 1&2)
t
f
(Note 1&2)
Qg
(Note 1&2)
Qgs
(Note 1&2)
Qgd
(Note 1&2)
Rg
Source-Drain Diode
I
S
I
SM
(Note 3)
V
SD
(Note 1)
trr
Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6458
849
402
23.8
25.6
187.2
69.4
113
19.6
19.6
3
-
-
-0.69
28.4
20.8
-
-
-
-
-
-
-
-
-
-
-
-2.1
-8.4
-1
-
-
pF
(Note 1)
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 3/9
Min.
-
Typ.
59
Max.
-
Unit
S
Test Conditions
V
DS
=-5V, I
D
=-20A
V
DS
=-15V, V
GS
=0V, f=1MHz
V
DS
=-15V, I
D
=-1A, V
GS
=-10V,
R
G
=6
Ω
ns
nC
Ω
A
V
ns
nC
V
DS
=-15V, I
D
=-20A, V
GS
=-10V
f=1MHz
I
S
=-2.1A, V
GS
=0V
I
F
=-20A, dI
F
/dt=100A/μs
Note : 1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
Recommended Soldering Footprint
MTB5D0P03Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
1.4
-4V
-10V, -9V, -8V, -7V, -6V, -5V
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 4/9
Normalized Brekdown Voltage vs Ambient
Temperature
-I
D
, Drain Current (A)
1.2
V
GS
=-3V
1
0.8
I
D
=-250μA,
V
GS
=0V
Tj=25°C
0.6
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
4
6
8
-V
DS
, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=-2.5V
Tj=25°C
1
0.8
Tj=150°C
V
GS
=-3V
10
0.6
0.4
0.2
V
GS
=-4.5V
V
GS
=-10V
1
0.1
1
10
-I
D
, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
0
4
8
12
16
-I
S
, Source Drain Current(A)
20
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
-75 -50 -25
V
GS
=-10V, I
D
=-20A
R
DS(ON)
@Tj=25°C : 3mΩ typ.
100
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
80
70
60
50
40
30
20
10
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
90
I
D
=-20A
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB5D0P03Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
Ciss
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 5/9
1.6
-V
GS(th)
, Normalized Threshold
Voltage
1.4
1.2
1
0.8
0.6
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance---(pF)
I
D
=-1mA
C
oss
1000
Crss
I
D
=-250μA
0.4
0.2
100
0.1
1
10
-V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
100
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
V
DS
=-20V
G
FS
, Forward Transfer Admittance(S)
-V
GS
, Gate-Source Voltage(V)
10
1
0.1
0.01
0.001
0.001
V
DS
=-5V
Pulsed
T
A
=25°C
8
6
4
2
V
DS
=-15V
V
DS
=-10V
I
D
=-20A
0
0.01
0.1
1
-I
D
, Drain Current(A)
10
100
0
20
40
60
80
100
Qg, Total Gate Charge(nC)
120
Maximum Safe Operating Area
1000
100
10
1
0.1
0.01
0.01
0.1
1
10
-I
D
, Drain-Source Voltage(V)
100
100μs
Maximum Drain Current vs Junction Temperature
25
-I
D
, Maximum Drain Current(A)
20
15
10
5
0
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
-I
D
, Drain Current(A)
1ms
10ms
100ms
1s
T
A
=25°C, Tj=150°C, V
GS
=-10V
θ
JA
=40°C/W, Single Pulse
DC
T
A
=25°C, V
GS
=-10V, R
θJA
=40°C/W
MTB5D0P03Q8
CYStek Product Specification
