CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 1/9
MTBH0N25J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DSON(TYP)
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=2A
250V
3.5A
1.0A
780mΩ
735mΩ
Equivalent Circuit
MTBH0N25J3
Outline
TO-252(DPAK)
G：Gate
S：Source
D：Drain
G
D S
Ordering Information
Device
MTBH0N25J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V, T
C
=25°C
Continuous Drain Current @ V
GS
=10V, T
C
=100°C
Continuous Drain Current @ V
GS
=10V, T
A
=25°C
Continuous Drain Current @ V
GS
=10V, T
A
=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=2mH, I
D
=3A, V
DD
=50V
Repetitive Avalanche Energy@ L=0.1mH
Total Power Dissipation @T
C
=25℃
(Note 1)
Total Power Dissipation @T
C
=100℃
(Note 1)
Total Power Dissipation @T
A
=25℃
(Note 2)
Total Power Dissipation @T
A
=70℃
(Note 2)
Operating Junction and Storage Temperature Range
V
DS
V
GS
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 4)
(Note 4)
(Note 3)
I
D
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
250
±20
3.5
2.5
1.0
0.8
8.5
4
9
3
30
15
2.5
1.6
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
R
θJC
5
Thermal Resistance, Junction-to-ambient, max
(Note 2)
50
°C/W
R
θJA
Thermal Resistance, Junction-to-ambient, max
(Note 4)
110
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3
.
Pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency and low duty
cycles to keep initial T
J
=25°C.
4. 100% tested by conditions of L=2mH, I
AS
=2A, V
GS
=10V, V
DD
=50V
5. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
6. The R
θJA
is the sum of thermal resistance from junction to case R
θJC
and case to ambient.
MTBH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
*1
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 3/9
Min.
250
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
780
735
6.2
11.8
1.5
4.7
6
16
28.2
23.4
382
32.3
16.3
-
-
0.77
42
58
Max.
-
2.5
±
100
1
25
980
960
-
-
-
-
-
-
-
-
-
-
-
3.5
8
1
-
-
Unit
V
nA
μA
m
Ω
S
nC
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=
±
20V, V
DS
=0V
V
DS
=200V, V
GS
=0V
V
DS
=200V, V
GS
=0V, T
J
=125°C
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=2A
V
DS
=15V, I
D
=3A
V
DS
=200V, I
D
=3A, V
GS
=10V
G
FS
*1
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Ciss
Coss
Crss
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
ns
V
DS
=125V, I
D
=1A, V
GS
=10V, R
G
=6
Ω
pF
V
GS
=0V, V
DS
=25V, f=1MHz
A
V
ns
nC
I
S
=1A, V
GS
=0V
I
F
=1A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTBH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
8
7
I
D
, Drain Current (A)
6
5
4
3
2
1
0
0
3
6
9
12
V
DS
, Drain-Source Voltage(V)
15
0.4
-75 -50 -25
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V
9V
8V
7V
6V
5V
4.5V
4V
3.5V
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
V
GS
=3V
I
D
=250μA,
V
GS
=0V
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
10000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
0.8
0.6
0.4
0.2
Tj=25°C
1000
Tj=150°C
V
GS
=3V
V
GS
=4.5V
V
GS
=10V
100
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
1600
1400
1200
1000
800
600
400
200
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
3
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
I
D
=3A
2.5
2
1.5
1
0.5
0
V
GS
=10V, I
D
=3A
R
DS(ON)
@Tj=25°C : 780mΩ
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTBH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
I
D
=1mA
1000
Capacitance---(pF)
1
0.8
0.6
0.4
100
C
oss
I
D
=250μA
Crss
10
0
5
10
15
20
V
DS
, Drain-Source Voltage(V)
25
30
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
Gate Charge Characteristics
10
G
FS
, Forward Transfer Admittance(S)
V
DS
=10V
V
GS
, Gate-Source Voltage(V)
8
6
1
V
DS
=15V
4
2
V
DS
=200V
I
D
=3A
0.1
Ta=25°C
Pulsed
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
Qg, Total Gate Charge(nC)
10
12
Maximum Safe Operating Area
10
R
DSON
Limited
1
100μ
s
1ms
10ms
100m
Maximum Drain Current vs Case Temperature
4
I
D
, Maximum Drain Current(A)
3.5
3
2.5
2
1.5
1
0.5
0
25
V
GS
=10V, R
θ
JC
=5°C/W
I
D
, Drain Current(A)
1s
0.1
T
C
=25°C, Tj=175°C
V
GS
=10V, R
θ
JC
=5°C/W
Single Pulse
0.01
DC
0.1
10
100
V
DS
, Drain-Source Voltage(V)
1
1000
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTBH0N25J3
CYStek Product Specification
