CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 1/12
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC5806AQ8
Description
BV
DSS
I
D
R
DSON
(typ.) @V
GS
=(-)10V
R
DSON
(typ.) @V
GS
=(-)4.5V
N-CH
60V
4.5A
37mΩ
42mΩ
P-CH
-60V
-3.5A
70mΩ
93mΩ
The MTC5806AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free package
Equivalent Circuit
MTC5806AQ8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTC5806AQ8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25
°C
Continuous Drain Current @T
A
=70
°C
Pulsed Drain Current
(Note 1)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 2/12
Symbol
BV
DSS
V
GS
I
D
I
D
I
DM
P
D
Tj; Tstg
Limits
N-channel
60
±20
4.5
3.6
20
2
1.6
(Note 2)
0.9
(Note 3)
P-channel
-60
±20
-3.5
-2.8
-20
Unit
V
V
A
A
A
W
°C
(Note 2)
(Note 2)
-55~+150
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
40
78
(Note 2)
135
(Note 3)
Unit
°C/W
°C/W
°C/W
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3.Surface
mounted on minimum copper pad, pulse width≤10s.
N-Channel Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
*t
d(ON)
*t
r
*t
d(OFF)
*t
f
MTC5806AQ8
Min.
60
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
1.7
-
-
-
37
42
6
1173
45
35
8
12
30
7
Max.
-
2.5
±100
1
10
58
60
-
-
-
-
20
18
35
15
Unit
V
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V, V
DS
=0
V
DS
=48V, V
GS
=0
V
DS
=40V, V
GS
=0, Tj=55°C
V
GS
=10V, I
D
=4.5A
V
GS
=4.5V, I
D
=4A
V
DS
=10V, I
D
=4.5A
pF
V
DS
=25V, V
GS
=0, f=1MHz
ns
V
DS
=30V, I
D
=1A, V
GS
=10V, R
G
=6
Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
14
3.9
4.7
0.75
-
-
16
-
-
1.0
1.3
2.6
nC
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 3/12
V
DS
=30V, I
D
=4.5A, V
GS
=10V
V
A
A
V
GS
=0V, I
S
=1.3A
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
P-Channel Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
Min.
-60
-1.0
-
-
-
-
-
-
Typ.
-
-1.8
-
-
-
70
93
5
940
49
35
6
8
26
11
10
3
3.1
-0.75
-
-
Max.
-
-2.5
±100
-1
-10
90
125
-
-
-
-
13
18
31
20
15
-
-
-1.0
-1.3
-2.6
Unit
V
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±20V, V
DS
=0
V
DS
=-48V, V
GS
=0
V
DS
=-40V, V
GS
=0, Tj=55°C
V
GS
=-10V, I
D
=-3.5A
V
GS
=-4.5V, I
D
=-3A
V
DS
=-10V, I
D
=-3.5A
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
*t
d(ON)
-
*t
r
-
*t
d(OFF)
-
*t
f
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
pF
ns
ns
V
DS
=-30V, V
GS
=0, f=1MHz
V
DS
=-30V, I
D
=-1A, V
GS
=-10V, R
G
=6
Ω
nC
V
DS
=-30V, I
D
=-3.5A, V
GS
=-10V
V
A
V
GS
=0V, I
S
=-1.3A
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTC5806AQ8
Package
Shipping
SOP-8
2500 pcs / Tape & Reel
(Pb-free lead plating & halogen-free package)
Marking
5806SS
MTC5806AQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
20
10V, 9V, 8V, 7V, 6V, 5V, 4V
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 4/12
Brekdown Voltage vs Ambient Temperature
1.4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A,
V
GS
=0V
I
D
, Drain Current(A)
15
10
V
GS
=3V
5
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=2.5V
V
GS
=3V
V
GS
=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
100
V
GS
=10V
0.4
0.2
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
100
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=4.5A
2
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
R
DS(ON)
@Tj=25°C : 36mΩ typ.
V
GS
=10V, I
D
=4.5A
MTC5806AQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
Ciss
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 5/12
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A
Capacitance---(pF)
1000
100
C
oss
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
G
FS
, Forward Transfer Admittance(S)
V
GS
, Gate-Source Voltage(V)
100
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
V
DS
=48V
8
6
4
2
V
DS
=30V
V
DS
=12V
1
0.1
V
DS
=10V
Pulsed
Ta=25°C
I
D
=4.5A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Safe Operating Area
100
6
Maximum Drain Current vs Junction Temperature
I
D
, Maximum Drain Current(A)
I
D
, Drain Current(A)
10
R
DS(ON)
Limite
100
μ
s
5
4
3
2
1
0
T
A
=25°C, V
GS
=10V
R
θJA
=78°C/W
1ms
1
10ms
100m
0.1
T
A
=25°C, Tj=150°C, V
GS
=10V
R
θJA
=78°C/W,Single Pulse
1s
DC
0.01
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
150
T
J
, Junction Temperature(°C)
175
MTC5806AQ8
CYStek Product Specification
