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MTC90013S

2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
2 通道 晶体管输出光电耦合器

器件类别:光电子/LED   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

下载文档
器件参数
参数名称
属性值
最大工作温度
100 Cel
最小工作温度
-55 Cel
功能数量
2
加工封装描述
LEAD FREE, SURFACE MOUNT, DIP-16
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
端子涂层
MATTE TIN
结构
SEPARATE, 2 CHANNELS
光电器件类型
TRANSISTOR OUTPUT
最小Coll-emtr Bkdn电压
55 V
最大集电极暗电流
100 nA
额定电流传输比
50 %
最大输入控制电流
60 mA
最大绝缘电压
5000 V
文档预览
MCT9001 — Dual Phototransistor Optocouplers
February 2010
MCT9001
Dual Phototransistor Optocouplers
Features
Two isolated channels per package
Two packages fit into a 16 lead DIP socket
Underwriters Laboratory (U.L.) recognized File
Description
The MCT9001 Optocoupler has two channels for density
applications. For four channel applications, two-packages
fit into a standard 16-pin DIP socket. Each channel is an
NPN silicon planar phototransistor optically coupled to a
gallium arsenide infrared emitting diode.
E90700
VDE approved for IEC60747-5-2
Applications
AC line/digital logic – isolate high voltage transients
Digital logic/digital logic – eliminate spurious grounds
Digital logic/AC triac control – isolate high voltage
transients
Twisted pair line receiver – eliminate ground loop
feedthrough
Telephone/telegraph line receiver – isolate high
voltage transients
High frequency power supply feedback control –
maintain floating grounds and transients
Relay contact monitor – isolate floating grounds and
transients
Power supply monitor – isolate transients
Schematic
Package Outlines
ANODE 1
8 COLLECTOR
8
1
CATHODE 2
7 EMITTER
ANODE 3
6 COLLECTOR
8
CATHODE 4
5 EMITTER
8
1
1
Equivalent Circuit
©2003 Fairchild Semiconductor Corporation
MCT9001 Rev. 1.0.7
www.fairchildsemi.com
MCT9001 — Dual Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
Storage Temperature
Operating Temperature
Rating
Value
-55 to +150
-55 to +100
260 for 10 sec
400
4.83
60
3
5.0
100
1.1
30
150
1.67
Unit
°C
°C
°C
mW
mW/°C
mA
A
V
mW
mW/°C
mA
mW
mW/°C
Lead Solder Temperature
(Refer to Reflow Temperature Profile)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER (Each channel)
I
F
I
F
(pk)
V
R
P
D
Forward Current – Continuous
Forward Current – Peak (PW = 1µs, 300pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C (Total Input)
DETECTOR (Each channel)
I
C
P
D
Collector Current – Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
©2003 Fairchild Semiconductor Corporation
MCT9001 Rev. 1.0.7
www.fairchildsemi.com
2
MCT9001 — Dual Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
C
J
BV
CEO
BV
ECO
I
CEO
C
CE
Input Forward Voltage
Reverse Current
Junction Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
I
F
= 10mA
V
R
= 5V
V
F
= 0 V, f = 1MHz
I
C
= 0.5mA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 24V, I
F
= 0
V
CE
= 24V, T
A
= 85°C
V
CE
= 0V, f = 1MHz
8
55
7
5
100
50
50
1.0
1.3
10
V
µA
pF
V
V
nA
µA
pF
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
DETECTOR
Transfer Characteristics
Symbol
Non-Saturated
t
on
t
off
t
r
t
f
Saturated
t
on
t
off
CTR
CTR
(sat)
V
CE(sat)
Turn-on Time
Turn-off Time
Current Transfer Ratio,
Collector-Emitter
Saturation Voltage
I
F
= 5mA, V
CE
= 5V
I
F
= 8mA, V
CE
= 0.4V
I
F
= 8mA, I
C
= 2.4mA
50
30
0.40
I
F
= 16mA, R
L
= 1.9k
, V
CE
= 5V
2.4
25.0
600
µs
µs
%
%
V
Turn-on Time
Turn-off Time
Rise Time
Fall Time
R
L
= 100
, I
C
= 2mA, V
CC
= 10V
3
3
2.4
2.4
µs
µs
µs
µs
Parameter
Test Conditions
Min.
Typ.*
Max.
Units
SWITCHING TIMES (AC)
DC CHARACTERISTICS
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
I
I-O
10µA, t = 1min.
V
I-O
= 500VDC
f = 1MHz
Min.
5000
10
11
Typ.*
Max.
Units
Vac(rms)
0.5
pF
*All typicals at T
A
= 25°C
©2003 Fairchild Semiconductor Corporation
MCT9001 Rev. 1.0.7
www.fairchildsemi.com
3
MCT9001 — Dual Phototransistor Optocouplers
Typical Performance Curves
Fig. 1 Normalized CTR vs. Forward Current
1.4
1.2
V
CE
= 5.0V
T
A
= 25
°
C
Normalized to
I
F
= 10mA
Fig. 2 Normalized CTR vs. Ambient Temperature
1.6
1.4
NORMALIZED CTR
NORMALIZED CTR
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
15
I
F
- FORWARD CURRENT (mA)
20
I
F
= 5mA
1.2
1.0
I
F
= 10mA
0.8
0.6
Normalized to
I
F
= 10mA
T
A
= 25
°
C
I
F
= 20mA
0.4
-75
-50
-25
0
25
50
75
100
T
A
- AMBIENT TEMPERATURE (°C)
125
Fig. 3 Dark Current vs. Ambient Temperature
I
CEO
- COLLECTOR-EMITTER DARK CURRENT (µA)
Fig. 4 Switching Speed vs. Load Resistor
1000
I
F
= 10mA
V
CC
= 10V
T
A
= 25
°
C
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
V
CE
= 10V
SWITCHING SPEED (µs)
100
T
off
10
T
f
T
on
1
T
r
10
-6
0
25
50
75
100
125
0.1
0.1
1
10
R - LOAD RESISTOR (kΩ)
100
T
A
- AMBIENT TEMPERATURE (°C)
Fig. 5 LED Forward Voltage vs. Forward Current
1.8
1.7
100
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
T
A
= 25
°
C
V
F
- FORWARD VOLTATGE (V)
V
CE (SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.6
1.5
1.4
1.3
T
A
= 25
°
C
10
1
I
F
= 2.5mA
T
A
= 55
°
C
0.1
1.2
1.1
T
A
= 100
°
C
0.01
I
F
= 5mA
I
F
= 20mA
I
F
= 10mA
1.0
1
10
I
F
- LED FORWARD CURRENT (mA)
100
0.001
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
©2003 Fairchild Semiconductor Corporation
MCT9001 Rev. 1.0.7
www.fairchildsemi.com
4
MCT9001 — Dual Phototransistor Optocouplers
Package Dimensions
Through Hole
Surface Mount
9.18~10.18
9.18~10.18
(0.405)
Pin 1
Pin 1
(0.405)
6.00~7.00
6.00~7.00
3.00~4.00
1.15~1.35
3.00~4.00
1.15~1.35
4.50
(Typ.)
0.35
Typ.
0.75~1.25
(Both sides
8.15 (Typ.)
9.86~10.46
0.26 (Typ.)
0.26 Typ.
1.00
(Typ.)
2.30~3.30
0.40~0.60
2.29~2.79
7.62 (Typ.)
15°
(Max.)
3.85
Typ.
2.29~2.79
0.40~0.60
0.4" Lead Spacing
9.18~10.18
(0.405)
Recommend Pad Layout for Surface
Mount Leadform
(1.50)
(2.54)
Pin 1
6.00~7.00
(1.30)
(10.50)
(7.90)
3.00~4.00
1.15~1.35
4.60
(Typ.)
1.10
(Typ.)
2.30~3.30
2.29~2.79
0.40~0.60
15°
(Max.)
10.16 (Typ.)
0.26 (Typ.)
(1.04)
Note:
All dimensions are in millimeters.
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2003 Fairchild Semiconductor Corporation
MCT9001 Rev. 1.0.7
www.fairchildsemi.com
5
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参数对比
与MTC90013S相近的元器件有:MTC9001300、MTC90013SD。描述及对比如下:
型号 MTC90013S MTC9001300 MTC90013SD
描述 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
最大工作温度 100 Cel 100 Cel 100 Cel
最小工作温度 -55 Cel -55 Cel -55 Cel
功能数量 2 2 2
加工封装描述 LEAD FREE, SURFACE MOUNT, DIP-16 LEAD FREE, SURFACE MOUNT, DIP-16 LEAD FREE, SURFACE MOUNT, DIP-16
无铅 Yes Yes Yes
欧盟RoHS规范 Yes Yes Yes
状态 ACTIVE ACTIVE ACTIVE
端子涂层 MATTE TIN MATTE TIN MATTE TIN
结构 SEPARATE, 2 CHANNELS SEPARATE, 2 CHANNELS SEPARATE, 2 CHANNELS
光电器件类型 TRANSISTOR OUTPUT TRANSISTOR OUTPUT TRANSISTOR OUTPUT
最小Coll-emtr Bkdn电压 55 V 55 V 55 V
最大集电极暗电流 100 nA 100 nA 100 nA
额定电流传输比 50 % 50 % 50 %
最大输入控制电流 60 mA 60 mA 60 mA
最大绝缘电压 5000 V 5000 V 5000 V
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