MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTD20P03HDL/D
™
Data Sheet
HDTMOS E-FET.
™
High Density Power FET
DPAK for Surface Mount
Designer's
MTD20P03HDL
Motorola Preferred Device
P–Channel Enhancement–Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
•
Avalanche Energy Specified
•
Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
•
Diode is Characterized for Use in Bridge Circuits
•
IDSS and VDS(on) Specified at Elevated Temperature
•
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100°C
Drain Current
— Single Pulse (tp
≤
10
µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C, when mounted with the minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 19 Apk, L = 1.1 mH, RG = 25
Ω)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient, when mounted with the minimum recommended pad size
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TMOS POWER FET
LOGIC LEVEL
19 AMPERES
30 VOLTS
RDS(on) = 0.099 OHM
™
D
G
S
CASE 369A–13, Style 2
DPAK
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
30
30
±15
±
20
19
12
57
75
0.6
1.75
– 55 to 150
200
1.67
100
71.4
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
TJ, Tstg
EAS
R
θJC
R
θJA
R
θJA
TL
°C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
©
Motorola TMOS
Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1
MTD20P03HDL
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current
(VGS =
±15
Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 9.5 Adc)
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 19 Adc)
(ID = 9.5 Adc, TJ = 125°C)
Forward Transconductance
(VDS = 8.0 Vdc, ID = 9.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDS = 24 Vdc, ID =19 Adc,
VGS = 5.0 Vdc)
(VDD = 15 Vdc, ID = 19 Adc,
VGS = 5.0 Vdc,
RG = 1.3
Ω)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(Cpk
≥
2.0) (3)
Reverse Recovery Time
(See Figure 15)
(IS = 19 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Absolute Value of Spec (Spec–AVG/3.516
µA).
LD
—
LS
—
7.5
—
4.5
—
nH
nH
(IS = 19 Adc, VGS = 0 Vdc)
(IS = 19 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
—
trr
ta
tb
QRR
—
—
—
—
3.1
2.56
78
50
28
0.209
3.4
—
—
—
—
—
µC
ns
Vdc
—
—
—
—
—
—
—
—
18
178
21
72
15
3.0
11
8.2
25.2
246.4
26.6
98
22.4
—
—
—
nC
ns
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
770
360
130
1064
504
182
pF
(Cpk
≥
2.0) (3)
VGS(th)
1.0
—
(Cpk
≥
2.0) (3)
RDS(on)
—
VDS(on)
—
—
gFS
5.0
6.0
—
0.94
—
2.2
1.9
mhos
120
90
—
99
Vdc
1.5
4.0
2.0
—
Vdc
mV/°C
mΩ
(Cpk
≥
2.0) (3)
V(BR)DSS
30
—
IDSS
—
—
IGSS
—
—
100
—
—
10
100
nAdc
—
15
—
—
Vdc
mV/°C
µAdc
Symbol
Min
Typ
Max
Unit
2
Motorola TMOS Power MOSFET Transistor Device Data
MTD20P03HDL
TYPICAL ELECTRICAL CHARACTERISTICS
40
TJ = 25°C
I D , DRAIN CURRENT (AMPS)
32
VGS = 10 V
8V
6V
5V
I D , DRAIN CURRENT (AMPS)
32
4.5 V
24
4V
16
3.5 V
8
0
0
1
2
3
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
3V
2.5 V
5
40
VDS
≥
5 V
TJ = – 55°C
25°C
100°C
24
16
8
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.16
VGS = 5 V
0.16
TJ = 25°C
0.14
TJ = 100°C
0.12
0.14
0.12
VGS = 5 V
0.10
25°C
0.10
0.08
0.06
0
4
8
12
16
– 55°C
0.08
10 V
0.06
0
4
8
12
16
20
24
28
32
36
40
ID, DRAIN CURRENT (AMPS)
20
24
28
32
36
40
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
R DS(on) , DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
1.3
VGS = 5 V
ID = 10 A
1.2
I DSS, LEAKAGE (nA)
100
VGS = 0 V
TJ = 125°C
1.1
10
1.0
0.9
0.8
– 50
100°C
– 25
0
25
50
75
100
125
150
1
0
4
8
12
16
20
24
28
32
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
MTD20P03HDL
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge controlled.
The lengths of various switching intervals (∆t) are deter-
mined by how fast the FET input capacitance can be charged
by current from the generator.
The published capacitance data is difficult to use for calculat-
ing rise and fall because drain–gate capacitance varies
greatly with applied voltage. Accordingly, gate charge data is
used. In most cases, a satisfactory estimate of average input
current (IG(AV)) can be made from a rudimentary analysis of
the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a resis-
tive load, VGS remains virtually constant at a level known as
the plateau voltage, VSGP. Therefore, rise and fall times may
be approximated by the following:
tr = Q2 x RG/(VGG – VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn–on and turn–off delay times, gate current is
not constant. The simplest calculation uses appropriate val-
ues from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG – VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off–state condition when cal-
culating td(on) and is read at a voltage corresponding to the
on–state when calculating td(off).
At high switching speeds, parasitic circuit elements com-
plicate the analysis. The inductance of the MOSFET source
lead, inside the package and in the circuit wiring which is
common to both the drain and gate current paths, produces a
voltage at the source which reduces the gate drive current.
The voltage is determined by Ldi/dt, but since di/dt is a func-
tion of drain current, the mathematical solution is complex.
The MOSFET output capacitance also complicates the
mathematics. And finally, MOSFETs have finite internal gate
resistance which effectively adds to the resistance of the
driving source, but the internal resistance is difficult to mea-
sure and, consequently, is not specified.
The resistive switching time variation versus gate resis-
tance (Figure 9) shows how typical switching performance is
affected by the parasitic circuit elements. If the parasitics
were not present, the slope of the curves would maintain a
value of unity regardless of the switching speed. The circuit
used to obtain the data is constructed to minimize common
inductance in the drain and gate circuit loops and is believed
readily achievable with board mounted components. Most
power electronic loads are inductive; the data in the figure is
taken with a resistive load, which approximates an optimally
snubbed inductive load. Power MOSFETs may be safely op-
erated into an inductive load; however, snubbing reduces
switching losses.
2800
VDS = 0 V
2400
C, CAPACITANCE (pF)
2000
1600
1200 C
rss
800
400
0
10
5
VGS
0
VDS
5
10
Ciss
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
15
20
25
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
4
Motorola TMOS Power MOSFET Transistor Device Data
MTD20P03HDL
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
7
6
5
Q1
4
3
2
1
0
0
2
Q3
4
6
8
10
12
ID = 19 A
TJ = 25°C
VDS
14
QT
Q2
VGS
20
15
10
5
0
16
35
30
25
1000
VDD = 15 V
ID = 19 A
VGS = 5.0 V
TJ = 25°C
t, TIME (ns)
VDS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
tr
100
tf
td(off)
td(on)
10
1
RG, GATE RESISTANCE (OHMS)
10
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short t rr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
20
I S , SOURCE CURRENT (AMPS)
VGS = 0 V
TJ = 25°C
16
12
8
4
0
0.3
0.7
1.1
1.5
1.9
2.3
2.7
3.1
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
Motorola TMOS Power MOSFET Transistor Device Data
5
