CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C408FP-A
Issued Date : 2009.04.20
Revised Date :
Page No. : 1/9
MTN5N60FP
Description
BV
DSS
: 650V @Tj=150℃
R
DS(ON)
: 2.5Ω
I
D
: 4.5A
The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
•
BV
DSS
=650V typically @ Tj=150℃
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
Applications
•
Open Framed Power Supply
•
Adapter
•
STB
Symbol
MTN5N60FP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
G D S
MTN5N60FP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C408FP-A
Issued Date : 2009.04.20
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1
.
Repetitive rating; pulse width limited by maximum junction temperature.
2
.
I
AS
=4.5A, V
DD
=50V, L=6mH, V
G
=10V, starting TJ=+25
℃
.
3
.
I
SD
≤4.5A,
dI/dt≤100A/μs, V
DD
≤BV
DSS
, starting TJ=+25
℃
.
V
DS
V
GS
I
D
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
L
T
PKG
Pd
Tj, Tstg
600
±30
4.5*
2.7*
18*
58.6
4.5
3.3
4.5
300
260
33
0.26
-55~+150
V
V
A
A
A
mJ
A
mJ
V/ns
°C
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
3.79
62.5
Unit
°C/W
°C/W
MTN5N60FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
BV
DSS
∆BV
DSS
/∆Tj
BV
DS
V
GS(th)
*G
FS
I
GSS
I
DSS
600
-
-
-
2.0
-
-
-
-
-
-
650
0.6
700
-
10
-
-
-
-
18.5
3.98
8.19
10.8
6.9
25.7
9.6
810
73
9
-
-
-
452
26.5
-
-
-
-
4.0
-
±
100
1
10
2.2
-
-
-
-
-
-
-
-
-
-
1.5
4.5
18
-
-
V
V
V/°C
V
V
S
nA
μA
μA
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C408FP-A
Issued Date : 2009.04.20
Revised Date :
Page No. : 3/9
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
*trr
-
*Qrr
-
V
GS
=0, I
D
=250μA, Tj=25
℃
V
GS
=0, I
D
=250μA, Tj=150
℃
Reference to 25°C, I
D
=250μA
V
GS
=0, I
D
=4A
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=2.25A
V
GS
=
±
30
V
DS
=600V, V
GS
=0
V
DS
=480V, V
GS
=0, Tj=125°C
V
GS
=10V, I
D
=2.25A
nC
I
D
=4.5A, V
DD
=300V, V
GS
=10V
V
DD
=300V, I
D
=4.5A, V
GS
=10V,
R
G
=10
Ω
, R
D
=75
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
V
A
ns
μC
I
S
=4.5A, V
GS
=0V
V
GS
=0, I
F
=4.5A, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTN5N60FP
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Marking
5N60
MTN5N60FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C408FP-A
Issued Date : 2009.04.20
Revised Date :
Page No. : 4/9
MTN5N60FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C408FP-A
Issued Date : 2009.04.20
Revised Date :
Page No. : 5/9
MTN5N60FP
CYStek Product Specification
