CYStech Electronics Corp.
30V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 1/ 9
MTP3LP01S3
Features
•
Ultra high speed switching.
•
Low gate charge.
•
2.5V drive.
•
Pb-free package.
BV
DSS
I
D
R
DSON(typ)
-30V
-230mA
3Ω@-4V
4.6Ω@-2.5V
10.9Ω@-1.5V
Equivalent Circuit
MTP3LP01S3
Outline
SOT-323
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTP3LP01S3-0-T1-G
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTP3LP01S3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
a
=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Maximum Power Dissipation
(Note 2)
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
Note : 1. Pulse width≤ 10μs, duty cycle≤1%.
2. When mounted on a glass epoxy with a dimension of 100mm²×1mm.
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 2/ 9
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
th,ja
Tj, Tstg
Limits
-30
±10
-230
-920
200
625
-55~+150
Unit
V
V
mA
mA
mW
°C/W
°C
Electrical Characteristics
(Ta=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
*R
DS(ON)
Dynamic
Ciss
Coss
Crss
*t
d(ON)
*t
r
*t
d(OFF)
*t
f
*Qg
*Qgs
*Qgd
Source-Drain Diode
*I
S
*I
SM
*V
SD
Min.
-30
-0.6
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.9
210
-
-
-
3
4.6
10.9
35.7
11.9
3.7
26.4
12.8
31.5
46.4
0.78
0.1
0.1
-
-
0.83
Max.
-
-1.1
-
±
1
-1
-10
5
8
18
-
-
-
-
-
-
-
-
-
-
-230
-920
-1.2
Unit
V
V
mS
μA
μA
Ω
Test Conditions
V
GS
=0V, I
D
=-250μA
V
DS
=-10V, I
D
=-100μA
V
DS
=-10V, I
D
=-100mA
V
GS
=
±
8V, V
DS
=0
V
DS
=-30V, V
GS
=0
V
DS
=-24V, V
GS
=0; Tj=125
°
C
V
GS
=-4V, I
D
=-100mA
V
GS
=-2.5V, I
D
=-30mA
V
GS
=-1.5V, I
D
=-1mA
pF
V
DS
=-20V, V
GS
=0, f=1MHz
V
DS
=-15V, I
D
=-100mA, V
GS
=-4V,
R
L
=150
Ω
, R
G
=50
Ω
ns
nC
V
DS
=-10V, I
D
=-100mA, V
GS
=-10V
mA
V
V
GS
=0V, I
S
=-100mA
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTP3LP01S3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
(The minus sign in voltage and current is omitted)
Typical Output Characteristics
0.3
T
A
=25°C
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 3/ 9
Typical Transfer Characteristics
200
V
DS
=10V
25°C
75°C
0.25
Drain Current --- I
D
(A)
0.2
0.15
0.1
4V
6V
3.5V
3V
2.5V
Drain Current -I
D
(A)
150
100
125°C
2V
50
0.05
V
GS
=1.5V
0
0
0.5
1
1.5
Drain-Source Voltage ---V
DS
(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
2
0
0.5
1
1.5
2
2.5
Gate-Source Voltage-V
GS
(V)
3
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
I
D
=30mA
Static Drain-Source On-State
Resistance-R
DS(ON)
(Ω)
10
I
D
=50mA
Static Drain-Source On-State
Resistance-R
DS(ON)
(Ω)
8
T
A
=25°C
8
T
A
=25°C
6
T
A
=75°C
6
T
A
=75°C
4
2
T
A
=125°C
4
2
0
T
A
=125°C
0
0
2
4
6
8
Gate-Source Voltage-VGS(V)
10
0
2
4
6
8
Gate-Source Voltage-V
GS
(V)
10
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
100
Static Drain-Source On-State Resistance-
R
DS(on)
(Ω)
V
GS
=1.5V
100
Static Drain-Source On-State Resistance-
R
DS(on)
(Ω)
V
GS
=2.5V
T
A
=125°C
T
A
=75°C
10
T
A
=25°C
10
T
A
=125°C
T
A
=75°C
T
A
=25°C
1
0.1
1
Drain Current-I
D
(mA)
10
1
1
10
Drain Current-I
D
(mA)
100
MTP3LP01S3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Static Drain-Source On-State resistance vs Drain Current
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 4/ 9
10
Static Drain-Source On-State Resistance-
RDS(on)(Ω)
V
GS
=4V
T
A
=75°C
T
A
=125°C
10
8
6
4
2
0
1
10
100
Drain Current-ID(mA)
1000
Static Drain-Source On-State resistance vs Ambient
Temperature
Static Drain-Source On-State
Resistance-R
DS(on)
(Ω)
I
D
=30mA, V
GS
=2.5V
T
A
=25°C
I
D
=50mA, V
GS
=4V
1
0
50
100
Ambient Temperature-T
A
(°C)
150
Reverse Drain Current vs Source-Drain Voltage
1.2
Source-Drain Voltage-V
SD
(V)
1
T
A
=125°C
V
GS
=0V
Capacitance vs Drain-to-Source Voltage
100
Ciss
0.8
0.6
0.4
T
A
=25°C
T
A
=75°C
Capacitance---(pF)
C
oss
10
Crss
0.2
0
0.1
1
10
100
(mA)
Reverse Drain Current -I
DR
Forward Transfer Admittance vs Drain Current
f=1MHz
1
1000
0
5
10
15
20
25
Drain-Source Voltage -V
DS
(V)
30
Brekdown Voltage vs Ambient Temperature
45
Drain-Source Breakdown Voltage
BV
DSS
(V)
1000
Forward Transfer Admittance---G
FS
(mS)
T
A
=25°C
40
100
T
A
=125°C
T
A
=75°C
35
I
D
=250μA,
V
GS
=0V
30
-100
-50
0
50
100
150
200
10
10
100
Drain Current-I
D
(mA)
1000
Ambient Temperature-Tj(°C)
MTP3LP01S3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Static Drain-Source On-resistance vs Ambient Temperature
6
Static Drain-Source On-state
Resistance-R
DS(on)
(Ω)
5
4
3
2
1
0
-100
I
D
=100mA,
V
GS
=4V
10
9
Gate-Source Voltage---V
GS
(V)
8
7
6
5
4
3
2
1
0
-50
0
50
100
Ambient Temperature-Ta(°C)
150
200
0
0.1
0.2
0.3
V
DS
=10V,
I
D
=100mA
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 5/ 9
Gate Charge Characteristics
0.4
0.5
0.6
0.7
0.8
Total Gate Charge---Qg(nC)
Power Derating Curves
250
Power Dissipation---P
D
(mW)
200
150
100
50
0
0
50
100
150
Ambient Temperature---T
A
(℃)
200
10
Maximum Safe Operating Area
1
Drain Current --- I
D
(A)
PW<100
μ
s
1ms
0.1
10ms
100ms
0.01
Single pulse
Tc=25°C; Tj=150°C
implemented on a
glass epoxy
0.01
0.1
1
DC
0.001
0.0001
0.001
10
100
Drain-Source Voltage -V
DS
(V)
MTP3LP01S3
CYStek Product Specification
