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MTZJ13C-L0A2G

Zener Diode, 13.33V V(Z), 2.6%, 0.5W, Silicon, Unidirectional, DO-34, DO-204, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
DO-204, 2 PIN
Reach Compliance Code
compli
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JEDEC-95代码
DO-34
JESD-30 代码
O-LALF-W2
JESD-609代码
e3
元件数量
1
端子数量
2
最高工作温度
175 °C
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
标称参考电压
13.33 V
表面贴装
NO
技术
ZENER
端子面层
TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
2.6%
工作测试电流
5 mA
文档预览
MTZJ2V0 - MTZJ39
Taiwan Semiconductor
Small Signal Product
500mW, Hermetically Sealed Glass Zener Diodes
FEATURES
- Zener voltage range : 2.0V to 39V
- DO-34 package (JEDEC DO-204)
- Through-hole device type mounting
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion resistant
and leads are readily solderable
- RoHS compliant
- Solder hot dip Tin (Sn) lead finish
- Cathode indicated by polarity band
DO-34
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power dissipation
Lead temperature (1/16" from case for 10 seconds)
Operating junction temperature
Storage temperature range
SYMBOL
P
D
L
t
T
J
T
STG
VALUE
500
230
+ 175
-65 to +200
UNIT
mW
o
o
o
C
C
C
Document Number:DS_S1311002
Version:B13
MTZJ2V0 - MTZJ39
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Type Number
MTZJ2V0
MTZJ2V2
MTZJ2V4
MTZJ2V7
MTZJ3V0
MTZJ3V3
MTZJ3V6
MTZJ3V9
T
Tolerance
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
MTZJ4V3
B
C
A
MTZJ4V7
B
C
A
MTZJ5V1
B
C
A
MTZJ5V6
B
C
A
MTZJ6V2
B
C
A
MTZJ6V8
B
C
A
MTZJ7V5
B
C
A
MTZJ8V2
B
C
A
MTZJ9V1
B
C
5.5%
4.3%
4.0%
4.1%
3.9%
4.0%
4.0%
3.9%
3.7%
3.4%
3.4%
3.1%
3.6%
3.3%
3.5%
3.3%
3.0%
3.0%
3.0%
2.6%
2.8%
2.7%
2.6%
2.6%
2.7%
2.4%
2.5%
2.6%
2.7%
2.6%
2.5%
2.6%
2.6%
2.6%
2.7%
2.6%
2.5%
2.6%
2.6%
2.5%
2.6%
2.5%
2.6%
V
Z
Nom
1.990
2.110
2.210
2.315
2.425
2.530
2.645
2.800
2.960
3.115
3.270
3.425
3.575
3.723
3.875
4.025
4.165
4.300
4.435
4.56
4.68
4.81
4.94
5.07
5.23
5.41
5.59
5.76
5.94
6.12
6.28
6.46
6.66
6.84
7.04
7.26
7.48
7.73
7.99
8.24
8.51
8.79
9.07
@ I
ZT
Min
1.88
2.02
2.12
2.22
2.33
2.43
2.54
2.69
2.85
3.01
3.16
3.32
3.455
3.60
3.74
3.89
4.04
4.17
4.30
4.44
4.55
4.68
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
(Volt)
Max
2.10
2.20
2.30
2.41
2.52
2.63
2.75
2.91
3.07
3.22
3.38
3.53
3.695
3.845
4.01
4.16
4.29
4.43
4.57
4.68
4.80
4.93
5.07
5.20
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
9.30
5
25
120
0.5
0.5
6.0
5
20
120
0.5
0.5
5.0
5
20
120
0.5
0.5
4.0
5
20
150
0.5
2.0
3.5
5
60
300
1.0
5.0
3.0
5
60
500
1.0
5.0
2.5
5
80
800
1.0
5.0
1.5
5
80
900
1.0
5.0
1.0
5
100
1000
1.0
5.0
1.0
I
ZT
(mA)
5
5
5
5
5
5
5
5
Z
ZT
@ I
ZT
(Ω)
Max
100
100
100
110
120
120
100
100
Z
ZK
@ I
ZK
(Ω)
Max
1000
1000
1000
1000
1000
1000
1000
1000
I
ZK
(mA)
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
I
R
(μA)
Max
120
100
120
100
50
20
10
5
V
R
(V)
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
Document Number:DS_S1311002
Version:B13
MTZJ2V0 - MTZJ39
Taiwan Semiconductor
Small Signal Product
Type Number
T
Tolerance
A
MTZJ10
B
C
D
A
MTZJ11
B
C
A
MTZJ12
B
C
A
MTZJ13
B
C
A
MTZJ15
B
C
A
MTZJ16
B
C
A
MTZJ18
B
C
A
MTZJ20
B
C
D
A
MTZJ22
B
C
D
A
MTZJ24
B
C
D
A
MTZJ27
B
C
D
A
MTZJ30
B
C
D
2.6%
2.6%
2.5%
2.5%
2.6%
2.6%
2.5%
2.5%
2.6%
2.6%
2.6%
2.6%
2.6%
2.5%
2.6%
2.5%
2.6%
2.6%
2.5%
2.5%
2.5%
2.6%
2.5%
2.5%
2.5%
2.5%
2.2%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
V
Z
Nom
9.36
9.66
9.95
10.19
10.45
10.78
11.10
11.42
11.74
12.05
12.43
12.88
13.33
13.79
14.26
14.72
15.19
15.65
16.10
16.64
17.26
17.88
18.49
19.11
19.73
20.22
20.68
21.18
21.63
22.08
22.62
23.19
23.72
24.24
24.89
25.62
26.29
26.97
27.69
28.42
29.09
29.77
@ I
ZT
Min
9.12
9.41
9.70
9.97
10.18
10.500
10.82
11.13
11.44
11.74
12.11
12.55
12.99
13.44
13.89
14.35
14.80
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
20.15
20.64
21.08
21.52
22.02
22.61
23.12
23.63
24.26
24.97
25.63
26.29
26.99
27.70
28.36
29.02
(Volt)
Max
9.59
9.90
10.20
10.44
10.71
11.05
11.38
11.71
12.03
12.35
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.70
18.33
18.96
19.59
20.22
20.72
21.2
21.71
22.17
22.63
23.18
23.77
24.31
24.85
25.52
26.26
26.95
27.64
28.39
29.13
29.82
30.51
5
55
250
0.5
0.2
23
5
45
250
0.5
0.2
21
5
35
200
0.5
0.2
19
5
30
200
0.5
0.2
17
5
55
200
0.5
0.5
15
5
45
150
0.5
0.2
13
5
40
150
0.5
0.2
12
5
40
110
0.5
0.2
11
5
35
110
0.5
0.2
10
5
30
110
0.5
0.2
9.0
5
30
120
0.5
0.2
8.0
5
30
120
0.5
0.2
7.0
I
ZT
(mA)
Z
ZT
@ I
ZT
(Ω)
Max
Z
ZK
@ I
ZK
(Ω)
Max
I
ZK
(mA)
I
R
(uA)
Max
V
R
(V)
Document Number:DS_S1311002
Version:B13
MTZJ2V0 - MTZJ39
Taiwan Semiconductor
Small Signal Product
Type Number
T
Tolerance
A
MTZJ33
B
C
D
A
MTZJ36
B
C
D
A
MTZJ39
B
C
D
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
2.5%
V
Z
Nom
30.45
31.10
31.70
32.30
32.97
33.64
34.27
34.89
35.58
36.28
36.93
37.58
@ I
ZT
Min
29.68
30.32
30.90
31.49
32.14
32.79
33.40
34.01
34.68
35.36
36.00
36.63
(Volt)
Max
31.22
31.88
32.50
33.11
33.79
34.49
35.13
35.77
36.47
37.19
37.85
38.52
5
85
250
0.5
0.2
30
5
75
250
0.5
0.2
27
5
65
250
0.5
0.2
25
I
ZT
(mA)
Z
ZT
@ I
ZT
(Ω)
Max
Z
ZK
@ I
ZK
(Ω)
Max
I
ZK
(mA)
I
R
(uA)
Max
V
R
(V)
Notes: 1. The Zener Voltage subdivision (V
Z
) is measured 40ms after diode is powered up.
2. The operating resistance (Z
ZT
or Z
ZK
) is measured by superimposing a minute alternation current
in the regulated current (I
Z
).
3. When ordering, please specofy tolerance A, B, C or D
Document Number:DS_S1311002
Version:B13
MTZJ2V0 - MTZJ39
Taiwan Semiconductor
Small Signal Product
Fig. 1 V
Z
- I
Z
Characteristics
10
8.2
7.5
1
6.8
6.2
5.6
0.1
5.1
4.7
20
18
16
15
13
12
11
10
9.1
22
24
27
30
33
36
39
Zener Current, I
Z
(mA)
4.3
0.01
3.9
3.6
0.001
0
5
10
15
20
Zener Voltage, V
Z
(V)
25
30
35
40
Fig. 2 P
D
- T
A
Characteristics
600
Power Dissipation : P
D
(mW)
500
400
300
200
100
0
0
25
50
75
100
(
o
C)
125
150
Ambient Temperature : T
A
10000
Reverse Surge Maximum Power : PRSM
(W)
Fig. 3 PRSM - Time Characteristics
Fig. 3
1000
100
10
1
0.001
0.01
0.1
1
10
100
Time : t (ms)
Fig. 4 r
z
- V
Z
Characteristics
0.10
Temp. Coefficient : r
z
(%/
o
C)
0.08
0.06
0.04
0.02
0.00
-0.02
-0.04
-0.06
-0.08
0
10
20
30
40
Zener Voltage (V)
30
Transient Thermal Impedance :
R
th
(
o
C/W)
25
Temp. Coeffcient: (mV/
o
C)
20
15
10
5
0
-5
1000
Fig. 5 R
th
-t Characteristics
R
th
(j-a)
100
R
th
(j-c)
10
1
0.1
0.001
0.01
0.1
1
Time : t (s)
10
100
1000
Document Number:DS_S1311002
Version:B13
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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