MUR105S thru MUR160S
Taiwan Semiconductor
CREAT BY ART
Surface Mount Ultrafast Power Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Ultrafast recovery time for high efficiency
- Low forward voltage, low power loss
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.09 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1 A, T
J
=25℃
@ 1 A, T
J
=150℃
Maximum reverse current @ rated VR
T
J
=25
℃
T
J
=150
℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
40
MUR
105S
50
35
50
MUR
110S
100
70
100
MUR
115S
150
105
150
1
35
MUR
120S
200
140
200
MUR
140S
400
280
400
MUR
160S
600
420
600
Unit
V
V
V
A
A
V
F
0.875
0.710
2
50
25
17
- 55 to +175
- 55 to +175
1.25
1.05
5
150
50
O
V
I
R
Trr
R
θjL
T
J
T
STG
μA
ns
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Document Number: DS_D1405061
Version: H14
MUR105S thru MUR160S
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
MUR1xxS
(Note 1)
R5
Prefix "H"
R4
M4
Suffix "G"
PACKING CODE GREEN COMPOUND
CODE
SMB
SMB
SMB
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xx" defines voltage from 50V (MUR105S) to 600V (MUR160S)
EXAMPLE
PREFERRED P/N
MUR160S R5
MUR160S R5G
MUR160SHR5
PART NO.
MUR160S
MUR160S
MUR160S
H
AEC-Q101
QUALIFIED
PACKING CODE
R5
R5
R5
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
1.5
AVERAGE FORWARD CURRENT (A)
PEAK FORWARD SURGE CURRENT
(A)
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
1
0.5
0
0
25
50
75
100
125
(
o
C)
150
175
LEAD TEMPERATURE
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT(A)
INSTANTANEOUS FORWARD
CURRENT(A)
10
MUR105S-120S
10
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
MUR140S-160S
1
TJ=150℃
TJ=25℃
TJ=150℃
1
TJ=25℃
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
Document Number: DS_D1405061
Version: H14
MUR105S thru MUR160S
Taiwan Semiconductor
FIG. 5 TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT
(μA)
INSTANTANEOUS REVERSE CURRENT
(μA)
1000
100
10
1
0.1
0.01
TJ=25℃
MUR105S-120S
TJ=150℃
1000
100
10
1
0.1
0.01
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
MUR140S-160S
TJ=150℃
TJ=25℃
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG. 7 TYPICAL JUNCTION CAPACITANCE
70
60
CAPACITANCE (pF)
50
40
30
20
10
0
0
MUR140S-160S
4
8
12
16
20
24
MUR105S-120S
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
1.95
4.25
3.48
1.99
0.90
5.10
0.10
0.15
Max
2.10
4.75
3.73
2.61
1.41
5.30
0.20
0.31
Unit (inch)
Min
0.077
0.167
0.137
0.078
0.035
0.201
0.004
0.006
Max
0.083
0.187
0.147
0.103
0.056
0.209
0.008
0.012
DIM.
A
B
C
D
E
F
G
H
Document Number: DS_D1405061
Version: H14
MUR105S thru MUR160S
Taiwan Semiconductor
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
2.3
2.5
4.3
1.8
6.8
Unit (inch)
0.091
0.098
0.169
0.071
0.268
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1405061
Version: H14
MUR105S thru MUR160S
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405061
Version: H14
微控制器 MCU
