SMD Type
Super Fast Recovery Diodes
MUR105F ~ MUR1100F
SOD-123F
Diodes
Unit:mm
Cathode Band
Top View
1.85 ± 0.1
●
Super Fast Switching Speed For High Efficiency
●
Epoxy meets UL 94 V-0 flammability rating
2.8 ± 0.1
1.20 ~ 1.35
0.65 ± 0.1
3.7 ± 0.1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Averaged Forward Current.T
A
=55℃
Peak Forward Surge Current @ 8.3ms
Junction Temperature
Operating Temperature
Storage Temperature
Symbol
V
RRM
V
RMS
V
DC
I
FAV
I
FSM
Tj
Topr
Tstg
MUR
105F
50
35
50
MUR
110F
100
70
100
MUR
115F
150
105
150
MUR
120F
200
140
200
1
35
150
-55 to 150
-55 to 150
℃
MUR
140F
400
280
400
MUR
160F
600
420
600
MUR MUR
180F 1100F
800
560
800
1000
700
1000
A
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
MUR105F-115F
Forward voltage
MUR120F-160F
MUR180F-1100F
Reverse voltage leakage current
MUR105F-120F
Reverse Recovery Time
Junction Capacitance
MUR140F-160F
MUR180F-1100F
C
J
t
rr
IR
Ta = 25℃
Ta = 150℃
I
F
=0.5A, I
R
=1A,
Irr=0.25A
V
R
=4V, f=1MHz
VF
IF=1A,Ta = 25℃
Symbol
Test Conditions
Min
Typ
Max
0.975
1.35
1.75
5
50
45
60
75
20
pF
ns
uA
V
Unit
0.20
0.8± 0.1
■
Features
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1
SMD Type
Super Fast Recovery Diodes
MUR105F ~ MUR1100F
■
Typical Characterisitics
Figure 1
Typical Forward Characteristics
20
10
6
4
2
Amps
1
.6
.4
.2
.1
.06
.04
.02
.01
.5
.7
.9
1.1
1.3
1.5
0
MUR120F -160F
MUR105F -115F
MUR180F-1100F
Amps
1.5
1.25
25°C
1.0
.75
.5
.25
Figure 2
Forward Derating Curve
Diodes
Single Phase, Half Wave
60Hz Resistive or Inductive Load
50
75
100
°C
125
150
175
25
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
°C
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
pF
10
6
4
2
1
.1
.2
.4
1
Volts
2
4
10
20
40
100 200
400
1000
T
J
=25°C
Junction Capacitance - pF
versus
Reverse Voltage - Volts
2
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SMD Type
Super Fast Recovery Diodes
MUR105F ~ MUR1100F
■
Typical Characterisitics
Figure 4
Typical Reverse Characteristics
100
60
40
20
10
6
4
2 T
A
=100
°C
µAmps
1
.6
.4
.2
.1 T
A
=25°C
.06
.04
.02
.01
20
40
60
80
Volts
Instantaneous Reverse Leakage Current - MicroAmperes
versus
Percent Of Rated Peak Reverse Voltage - Volts
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50Ω
10Ω
+0.5A
0
25Vdc
Pulse
Generator
Note 2
1Ω
Notes:
1. Rise Time = 7ns max.
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
Oscilloscope
Note 1
-0.25
t
rr
100
120
140
Amps
T
A
=150
°C
60
50
40
30
20
10
0
1
2
4
6 8 10 20
Cycles
Figure 5
Peak Forward Surge Current
Diodes
40
60 80 100
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
-1.0
1cm
Set Time Base for 20/100ns/cm
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