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MUR1620CT

8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
8 A, 200 V, 硅, 整流二极管, TO-220AB

器件类别:半导体    分立半导体   

厂商名称:Intersil ( Renesas )

厂商官网:http://www.intersil.com/cda/home/

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器件参数
参数名称
属性值
端子数量
3
元件数量
2
加工封装描述
TO-220AB, 3 PIN
状态
DISCONTINUED
包装形状
矩形的
包装尺寸
凸缘安装
端子形式
THROUGH-孔
端子涂层
NOT SPECIFIED
端子位置
单一的
包装材料
塑料/环氧树脂
结构
COMMON CATHODE, 2 ELEMENTS
壳体连接
CATHODE
二极管元件材料
二极管类型
整流二极管
应用
ULTRA FAST RECOVERY 高 POWER
相数
1
反向恢复时间最大
0.0350 us
最大重复峰值反向电压
200 V
最大平均正向电流
8 A
最大非重复峰值正向电流
100 A
文档预览
MUR1620CT, RURP820CC
Data Sheet
January 2000
File Number
1885.5
8A, 200V Ultrafast Dual Diodes
The MUR1620CT and RURP820CC are ultrafast dual
diodes with soft recovery characteristics (t
rr
< 25ns). They
have low forward voltage drop and are silicon nitride
passivated ionimplanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA09224.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
MUR1620CT
RURP820CC
PACKAGE
TO-220AB
TO-220AB
BRAND
MUR1620C
RURP820C
Packaging
JEDEC TO-220AB
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
1
A
2
Absolute Maximum Ratings
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
MUR1620CT,
RURP820CC
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 157
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
200
200
200
8
16
100
50
20
-65 to 175
3-317
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
MUR1620CT, RURP820CC
Electrical Specifications
SYMBOL
V
F
I
F
= 8A
I
F
= 8A, T
C
= 150
o
C
I
R
V
R
= 200V
V
R
= 200V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
13
5
25
60
-
MAX
0.975
0.895
100
500
25
30
-
-
-
-
3
UNITS
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
40
100
175
o
C
I
F
, FORWARD CURRENT (A)
I
R
, REVERSE CURRENT (µA)
10
10
1
100
o
C
0.1
175
o
C
1
0.5
0
0.2
0.4
100
o
C
25
o
C
0.01
25
o
C
0.6
0.8
1
1.2
1.4
0.001
0
50
100
150
200
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
3-318
MUR1620CT, RURP820CC
Typical Performance Curves
20
T
C
= 25
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
16
(Continued)
35
T
C
= 100
o
C, dI
F
/dt = 200A/µs
30
25
20
t
rr
t
rr
t
a
12
t
a
8
15
10
5
t
b
4
t
b
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
50
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
40
8
DC
6
SQ. WAVE
4
30
t
rr
t
a
20
2
10
t
b
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
0
140
145
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
150
C
J
, JUNCTION CAPACITANCE (pF)
125
100
75
50
25
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3-319
MUR1620CT, RURP820CC
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
3-320
MUR1620CT, RURP820CC
3-321
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参数对比
与MUR1620CT相近的元器件有:RURP820CC。描述及对比如下:
型号 MUR1620CT RURP820CC
描述 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
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