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MUR360SHR7G

Rectifiers 3A, 600V SMC Ultar fast GP

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
SMC, 2 PIN
Reach Compliance Code
compliant
其他特性
FREE WHEELING DIODE
应用
EFFICIENCY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.25 V
JEDEC-95代码
DO-214AB
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
75 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
参考标准
AEC-Q101
最大重复峰值反向电压
600 V
最大反向电流
10 µA
最大反向恢复时间
0.05 µs
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
MUR305S - MUR360S
Taiwan Semiconductor
3A, 50V - 600V Surface Mount Ultrafast Power Rectifier
FEATURES
Glass passivated junction
Ideal for automated placement
Built-in strain relief
Ultrafast recovery time for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
3
50 - 600
75
175
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive
and telecommunication.
Configuration
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
MUR
305S
MUR
305S
50
35
50
MUR
310S
MUR
310S
100
70
100
MUR
315S
MUR
315S
150
105
150
3
75
- 55 to +175
- 55 to +175
MUR
320S
MUR
320S
200
140
200
MUR
340S
MUR
340S
400
280
400
MUR
360S
MUR
360S
600
420
600
UNIT
V
V
V
A
A
°C
°C
1
Version:G1708
MUR305S - MUR360S
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
SYMBOL
R
ӨJL
LIMIT
11
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
CONDITIONS
SYMBOL
TYP.
-
I
F
= 3A, T
J
= 25°C
V
F
-
1.250
V
MAX.
0.875
UNIT
V
Forward voltage per diode
(1)
-
I
F
= 3A, T
J
= 150°C
V
F
-
0.710
V
1.050
V
μA
μA
μA
μA
-
T
J
= 25°C
I
R
-
5
Reverse current @ rated V
R
(2)
per diode
10
-
T
J
= 150°C
I
R
-
150
250
Reverse recovery time
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
-
t
rr
-
25
ns
50
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:G1708
MUR305S - MUR360S
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R7
R6
MUR3xxS
(Note 1)
H
M6
V7
V6
Note :
1. "xx" defines voltage from 50V (MUR305S) to 600V (MUR340S)
G
PACKING CODE
SUFFIX
PACKAGE
SMC
SMC
SMC
Matrix SMC
Matrix SMC
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
850 / 7" Plastic reel
3,000 / 13" Plastic reel
EXAMPLE
EXAMPLE P/N
MUR305SHR7G
PART NO.
MUR305S
PART NO.
SUFFIX
H
PACKING
CODE
R7
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
3
Version:G1708
MUR305S - MUR360S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
4
AVERAGE FORWARD CURRENT (A)
1000
Fig.2 Typical Junction Capacitance
3
CAPACITANCE (pF)
2
100
MUR305S - MUR320S
1
MUR340S - MUR360S
0
0
25
50
75
100
125
150
175
10
0.1
1
10
100
REVERSE VOLTAGE (V)
LEAD TEMPERATURE (
o
C)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
MUR305S - MUR320S
10
T
J
=150℃
10
Fig.4 Typical Forward Characteristics
10
MUR305S - MIR320S
1
UF1DLW
T
J
=125°C
T
J
=150℃
1
0.1
0.01
T
J
=25℃
Pulse width
0.01
T
J
=25℃
0.001
10
20
30
40
50
60
70
80
90
100
0.001
0.1
0
0.3
0.2
0.4
0.4
0.5
0.6
0.6
0.7
0.8
0.8
1
0.9
1.2
1
1.4
1.1
1.6
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:G1708
(A)
1
0.1
T
J
=25°C
MUR305S - MUR360S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
MUR340S - MUR360S
10
T
J
=150℃
1
10
10
Fig.6 Typical Forward Characteristics
MUR340S - MUR360S
1
UF1DLW
T
J
=125°C
T
J
=150℃
0.1
T
J
=25℃
0.01
Pulse width
0.001
0.1
0.3
0
0.4
0.2
0.5
0.4
0.6
0.7
0.8
0.9
1
1.1
1.8
1.2
2
0.6 0.8
1
1.2 1.4 1.6
FORWARD VOLTAGE (V)
0.01
T
J
=25℃
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.7 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
80
70
60
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
5
Version:G1708
(A)
0.1
1
T
J
=25°C
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