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MUR4100

4 A, SILICON, RECTIFIER DIODE, DO-201AD

器件类别:半导体    分立半导体   

厂商名称:Chenda

厂商官网:http://www.szchenda.com

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MUR405 THRU MUR4100
ULTRA FAST RECTIFIERS
Reverse Voltage - 200 to 600 Volts
Forward Current - 4.0 Amperes
DO-201AD
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ultra fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.220(5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052(1.3)
0.048(1.2)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 4.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=150 C
Maximum reverse recovery time
(NOTE 1)
SYMBOLS
MUR405 MUR410
MUR415
MUR420 MUR440
MUR460
MUR480
MUR4100
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
400
280
400
4.0
600
420
600
800
550
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
0.875
2.0
50.0
25
27.0
150
1.25
5.0
150.0
50
50.0
-65 to +175
1.85
Amps
Volts
µ
A
ns
C/W
C
Typical thermal resistance (NOTE 2)
R
θ
JA
Operating junction and storage temperature range T
J
,
T
STG
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
RATINGS AND CHARACTERISTIC CURVES MUR405 THRU MUR4100
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
5
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
4
40
3
30
2
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
20
1
1025 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
T
J
=25 C
PULSE WIDTH=300
µs
1%DUTY CYCLE
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
MUR405-MUR420
1
0.1
MUR440-MUR4100
0
0.4
0.8
1.2
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
JUNCTION CAPACITANCE, pF
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
T
J
=25 C
10
2
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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参数对比
与MUR4100相近的元器件有:MUR405、MUR410、MUR415、MUR420、MUR440、MUR460、MUR480。描述及对比如下:
型号 MUR4100 MUR405 MUR410 MUR415 MUR420 MUR440 MUR460 MUR480
描述 4 A, SILICON, RECTIFIER DIODE, DO-201AD 4 A, 50 V, SILICON, RECTIFIER DIODE RECTIFIER DIODE 4 A, SILICON, RECTIFIER DIODE, DO-201AD 4 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 4 A, 400 V, SILICON, RECTIFIER DIODE RECTIFIER DIODE,600V V(RRM),DO-201AD 4 A, SILICON, RECTIFIER DIODE, DO-201AD
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