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MUR810

8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:分立半导体    二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件:MUR810

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器件参数
参数名称
属性值
零件包装代码
TO-220AC
制造商包装代码
TO-220AC
文档预览
MUR805-MUR860
Ultra Fast Rectifiers
VOLTAGE RANGE: 50 --- 600V
Features
Low cost
Diffused junction
Glass passivated junction
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol and similar solvents
The plastic material carries U/L recognition 94V-0
CURRENT:
8.0A
TO - 220AC
Mechanical Data
Case:JEDEC TO-220AC
Terminals: solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.064 ounces,1.81 gram
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device (rated V
R
),T
C
=150℃
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
Maximum instantaneous
forward voltage (Note1)
Maximum reverse current
at rated DC blocking voltage
@I
F
=8.0A,T
C
=25℃
I
F
=8.0A,T
C
=150℃
@T
j
=25℃
T
j
=150℃
MUR MUR MUR MUR MUR
MUR
MUR
805
840 860
UNITS
810
815
820
830
U805 U810 U815 U820 U830 U840 U860
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
8.0
300
210
300
400
280
400
600
420
600
V
V
V
A
I
FSM
0.975
0.895
5.0
250
25
35
3.0
100
1.30
1.00
10
500
50
60
2.0
- 65 ---- + 175
- 65 ---- + 175
1.50
1.20
A
V
F
I
R
t
rr
R
θjC
T
j
T
STG
V
µA
ns
℃/W
Maximum reverse recovery time (Note2)
(Note3)
Typical thermal resistance junction to case
Operating junction temperature range
Storage temperature range
NOTE:1.Pulse test:pulse width=300µs,duty cycle≤2.0%
2. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25 A.
3. Measured with I
F
=1.0A,di/dt=50A/µs.
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mail:lge@luguang.cn
MUR805-MUR860
Ultra Fast Rectifiers
Ratings AND Charactieristic Curves
FIG.1 --TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
FIG.2--
TYPICALREVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE
CURRENT MILLIAMPERES
50
1000
MUR805 - MUR820
MUR830-MUR840
MUR860
10
100
T
J
=150℃
T
J
=75℃
AMPERES
10
T
J
=25℃
1.0
1
Pulse width=300
1% Duty Cycle
s
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.3 -- PEAK FORWARD SURGE CURRENT
FIG.4 -- FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT
100
AVERAGE FORWARD CURRENT,
AMPERES
10
8
6
4
2
0
0
25
50
75
100
125
150
175
200
Single Phase
Half Wave 60H
Z
,
Resistive or
Inductive Load
80
60
T
J
=25 C
8.3ms Single Half
sine-wave
0
AMPERES
40
20
0
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE
TEMPERATURE,
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mail:lge@luguang.cn
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参数对比
与MUR810相近的元器件有:MUR805、MUR815、MUR820、MUR830、MUR840、MUR860。描述及对比如下:
型号 MUR810 MUR805 MUR815 MUR820 MUR830 MUR840 MUR860
描述 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC RECTIFIER DIODE
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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