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MURA210T3G

反向恢复时间(trr):30ns 直流反向耐压(Vr):100V 平均整流电流(Io):2A 正向压降(Vf):940mV @ 2A

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
R-PDSO-C2
针数
2
制造商包装代码
403D-02
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
1 week
Samacsys Description
NULL
其他特性
FREE WHEELING DIODE
应用
GENERAL PURPOSE
最小击穿电压
100 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.94 V
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
50 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
参考标准
AEC-Q101
最大重复峰值反向电压
100 V
最大反向电流
2 µA
最大反向恢复时间
30 µs
反向测试电压
100 V
表面贴装
YES
端子面层
Tin (Sn)
端子形式
C BEND
端子位置
DUAL
Base Number Matches
1
文档预览
MURA205, SURA8205,
MURA210, NRVUA210V,
SURA8210,
Surface Mount
Ultrafast Power Rectifiers
Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
Features
www.onsemi.com
ULTRAFAST RECTIFIERS
2 AMPERES, 50−100 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.74 V Max @ 2.0 A, T
J
= 150°C)
NRVUA and SURA8 Prefixes for Automotive and Other
Applications Requiring Unique Site and Control Change
Requirements; AEC−Q101 Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
SMA
CASE 403D
MARKING DIAGRAM
U5x
AYWW
G
Case: Epoxy, Molded
Weight: 70 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
ESD Protection:
Human Body Model > 4000 V (Class 3)
Machine Model > 400 V (Class C)
U5x = Device Code
x = A for MURA205
= B for MURA210
A
= Assembly Location**
Y
= Year
WW = Work Week
G
= Pb−Free Package
** The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
ORDERING INFORMATION
Device
MURA205T3G
SURA8205T3G*
MURA210T3G
NRVUA210VT3G*
SURA8210T3G*
Package
SMA
(Pb−Free)
SMA
(Pb−Free)
SMA
(Pb−Free)
SMA
(Pb−Free)
SMA
(Pb−Free)
Shipping
5,000 / Tape & Reel
5,000 / Tape & Reel
5,000 / Tape & Reel
5,000 / Tape & Reel
5,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
May, 2017
Rev. 7
1
Publication Order Number:
MURA205T3/D
MURA205, SURA8205, MURA210, NRVUA210V, SURA8210,
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MURA205T3G/SURA8205T3G
MURA210T3G/SURA8210T3G/NRVUA210VT3G
Average Rectified Forward Current
@ T
L
= 155°C
@ T
L
= 135°C
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature Range
Symbol
V
RRM
V
RWM
V
R
Value
Unit
V
50
100
1.0
2.0
50
−65
to +175
A
I
F(AV)
I
FSM
T
J
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (T
L
= 25°C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Psi
JL
(Note 2)
R
qJA
Max
24
216
Unit
°C/W
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by R
qJL
) are now referenced as Psi
JL
.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 2.0 A, T
J
= 25°C)
(i
F
= 2.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, T
J
= 25°C)
(Rated DC Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
Symbol
v
F
Max
0.94
0.74
2.0
50
30
Unit
V
i
R
mA
t
rr
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%.
www.onsemi.com
2
MURA205, SURA8205, MURA210, NRVUA210V, SURA8210,
TYPICAL CHARACTERISTICS
100
I
R
, REVERSE CURRENT (mA)
10
1
0.1
0.01
T
J
= 175°C
100
I
R
, REVERSE CURRENT (mA)
T
J
= 175°C
10
T
J
= 100°C
1
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
0
20
40
60
80
100
0.001
0.1
0
20
40
60
80
100
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
Figure 2. Maximum Reverse Current
10
T
C
= 175°C
100°C
25°C
1
10
T
C
= 175°C
100°C
25°C
1
0.1
0.1
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
Figure 4. Maximum Forward Voltage
www.onsemi.com
3
MURA205, SURA8205, MURA210, NRVUA210V, SURA8210,
TYPICAL CHARACTERISTICS
50
45
C, CAPACITANCE (pF)
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
C, CAPACITANCE (pF)
40
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
60
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 48 pF
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
Figure 6. Maximum Capacitance
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
3.5
3
dc
R
qJL
= 24°C/W
T
J
= 175°C
I
F
, AVERAGE FORWARD CURRENT (A)
4
1.5
R
qJA
= 216°C/W
T
J
= 175°C
dc
1
SQUARE
WAVE
0.5
2.5 SQUARE WAVE
2
1.5
1
0.5
0
100 110
120
130
140
150
160
170
180
0
0
20
40
60
80
100
120
140
160
T
L
, LEAD TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating, Lead
Figure 8. Current Derating, Ambient
(FR−4 Board with Minimum Pad)
P
F
, AVERAGE POWER DISSIPATION (W)
2.5
T
J
= 175°C
2
1.5
1
0.5
0
SQUARE WAVE
dc
0
0.5
1
1.5
2
2.5
3
3.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Power Dissipation
www.onsemi.com
4
MURA205, SURA8205, MURA210, NRVUA210V, SURA8210,
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
A1
L
c
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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5
MURA205T3/D
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参数对比
与MURA210T3G相近的元器件有:MURA205T3_06、NRVUA210VT3G、MURA205T3G。描述及对比如下:
型号 MURA210T3G MURA205T3_06 NRVUA210VT3G MURA205T3G
描述 反向恢复时间(trr):30ns 直流反向耐压(Vr):100V 平均整流电流(Io):2A 正向压降(Vf):940mV @ 2A ULTRAFAST RECTIFIERS 2 AMPERES, 50−100 VOLTS DIODE GEN PURP 100V 2A SMA 直流反向耐压(Vr):50V 平均整流电流(Io):2A 正向压降(Vf):940mV @ 2A 反向恢复时间(trr):30ns
Brand Name ON Semiconductor - ON Semiconductor ON Semiconductor
是否无铅 不含铅 - 不含铅 不含铅
包装说明 R-PDSO-C2 - SMA,2 PIN SMA, 2 PIN
制造商包装代码 403D-02 - 403D-02 403D-02
Reach Compliance Code not_compliant - not_compliant not_compliant
Factory Lead Time 1 week - 1 week 6 weeks
其他特性 FREE WHEELING DIODE - FREE WHEELING DIODE FREE WHEELING DIODE
应用 GENERAL PURPOSE - HIGH VOLTAGE ULTRA FAST RECOVERY POWER GENERAL PURPOSE
配置 SINGLE - SINGLE SINGLE
二极管元件材料 SILICON - SILICON SILICON
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.94 V - 0.94 V 0.94 V
JESD-30 代码 R-PDSO-C2 - R-PDSO-J2 R-PDSO-C2
JESD-609代码 e3 - e3 e3
湿度敏感等级 1 - 1 1
最大非重复峰值正向电流 50 A - 50 A 50 A
元件数量 1 - 1 1
相数 1 - 1 1
端子数量 2 - 2 2
最高工作温度 175 °C - 175 °C 175 °C
最低工作温度 -65 °C - -65 °C -65 °C
最大输出电流 2 A - 2 A 2 A
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
参考标准 AEC-Q101 - AEC-Q101 AEC-Q101
最大重复峰值反向电压 100 V - 100 V 50 V
最大反向电流 2 µA - 2 µA 2 µA
最大反向恢复时间 30 µs - 0.03 µs 30 µs
表面贴装 YES - YES YES
端子面层 Tin (Sn) - Tin (Sn) Tin (Sn)
端子形式 C BEND - J BEND C BEND
端子位置 DUAL - DUAL DUAL
Base Number Matches 1 - 1 1
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