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MURH860CT_06

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

器件类别:半导体    分立半导体   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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MURH860CTG
Power Rectifier
These state-of-the-art power rectifiers are designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
Ultrafast 35 Nanosecond Recovery Times
175°C Operating Junction Temperature
Popular TO-220 Package
Epoxy Meets UL 94 V−0 @ 0.125 in
High Temperature Glass Passivated Junction
High Voltage Capability to 600 V
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures
These are Pb−Free Devices*
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ULTRAFAST RECTIFIER
8.0 AMPERES, 600 VOLTS
1
2, 4
3
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
1
2
4
TO−220AB
CASE 221A
3
MAXIMUM RATINGS
(Per Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 120°C) Total Device
Peak Repetitive Forward Current (Rated
V
R
, Square Wave, 20 kHz, T
C
= 120°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction and Storage
Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FM
I
FSM
Value
600
Unit
V
MARKING DIAGRAM
4.0
8.0
16
100
A
A
A
AY WW
UH860G
AKA
T
J
, T
stg
−65 to +175
°C
THERMAL CHARACTERISTICS
(Per Leg)
Rating
Max. Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Value
3.0
Unit
°C/W
A
Y
WW
UH860
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
MURH860CTG
Package
TO−220
(Pb−Free)
Shipping
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 6
Publication Order Number:
MURH860CT/D
MURH860CTG
ELECTRICAL CHARACTERISTICS
(Per Leg)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 4.0 A, T
C
= 150°C)
(i
F
= 4.0 A, T
C
= 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
C
= 150°C)
(Rated DC Voltage, T
C
= 25°C)
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ms)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
I R , REVERSE LEAKAGE CURRENT (
μ
A)
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
150°C
Symbol
v
F
2.5
2.8
i
R
500
10
t
rr
35
ns
mA
Value
Unit
V
50
20
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
4.5
5
T
J
= 150°C
85°C
25°C
100°C
25°C
0
50 100
200
300
400
500
V
R
, REVERSE VOLTAGE (VOLTS)
600
Figure 1. Typical Forward Voltage, Per Leg
Figure 2. Typical Reverse Leakage Current, Per Leg
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
40
36
32
28
24
20
16
12
8
4
0
1
2
3
4
5
6
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
7
SQUARE
WAVE
DC
T
J
= 150°C
10
9
8
7
6
5
4
3
2
1
0
40
60
80
100
120
140
T
C
, CASE TEMPERATURE (°C)
160
180
SQUARE
DC
RATED VOLTAGE APPLIED
R
qJC
= 3°C/W
Figure 3. Typical Forward Dissipation, Per Leg
Figure 4. Typical Current Derating, Case, Per Leg
www.onsemi.com
2
MURH860CTG
32
Trr, REVERSE RECOVERY TIME (ns)
28
24
20
Q
rr
16
12
8
4
0
0
1
2
3
4
5
6
7
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
8
V
r
= 30 V
di/dt = 50 A/ms
16
12
8
4
0
T
rr
32
28
24
20
Qrr , RECOVERED STORED CHARGE (nC)
Figure 5. Typical Recovery Characteristics
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.1
C, CAPACITANCE (pF)
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 6. Typical Capacitance, Per Leg
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3
MURH860CTG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
−T−
B
4
SEATING
PLANE
F
T
S
C
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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4
MURH860CT/D
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