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MURS115T3G

Rectifiers 150V 1A Ultrafast

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
零件包装代码
DO-214
包装说明
SMB, 2 PIN
针数
2
制造商包装代码
403A-03
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE
应用
HIGH VOLTAGE ULTRA FAST RECOVERY POWER
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.875 V
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
40 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
150 V
最大反向恢复时间
0.035 µs
表面贴装
YES
端子面层
Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
MURS120T3G Series,
SURS8120T3G Series,
NRVUS120VT3G Series
Surface Mount
Ultrafast Power Rectifiers
MURS105T3G, MURS110T3G, MURS115T3G,
MURS120T3G, MURS140T3G, MURS160T3G,
SURS8105T3G, SURS8110T3G, SURS8115T3G,
SURS8120T3G, SURS8140T3G, SURS8160T3G,
NRVUS110VT3G, NRVUS120VT3G,
NRVUS160VT3G
Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
Features
www.onsemi.com
ULTRAFAST RECTIFIERS
1.0 AMPERE, 50−600 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
U1x
G
G
Assembly Location*
Year
Work Week
Device Code
x = A, B, C, D, G, or J
G
= Pb−Free Package
(Note: Microdot may be in either location)
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
A
Y
WW
U1
=
=
=
=
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, T
J
= 150°C)
NRVUS and SURS8 Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 95 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
ESD Rating:
Human Body Model = 3B (> 8 kV)
Machine Model = C (> 400 V)
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking table
on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2017
April, 2017
Rev. 15
1
Publication Order Number:
MURS120T3/D
MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series
MAXIMUM RATINGS
MURS/SURS8/NRVUS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non−Repetitive Peak Surge Current, (Surge applied
at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
105T3
50
110T3
100
115T3
150
120T3
200
140T3
400
160T3
600
Unit
V
1.0 @ T
L
= 155°C
2.0 @ T
L
= 145°C
40
*65
to +175
1.0 @ T
L
= 150°C
2.0 @ T
L
= 125°C
35
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
MURS/SURS8/NRVUS
Rating
Thermal Resistance
Junction−to−Lead (T
L
= 25°C)
Symbol
R
qJL
105T3
110T3
115T3
13
120T3
140T3
160T3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
J
= 25°C)
(Rated DC Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
(i
F
= 0.5 A, i
R
= 1.0 A, I
R
to 0.25 A)
Maximum Forward Recovery Time
(i
F
= 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
Typical Peak Reverse Recovery Current
(I
F
= 1.0 A, di/dt = 50 A/ms)
v
F
0.875
0.71
2.0
50
35
25
25
0.75
1.25
1.05
5.0
150
75
50
50
1.60
V
i
R
mA
t
rr
ns
t
fr
I
RM
ns
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%.
DEVICE MARKING AND ORDERING INFORMATION
Device
MURS105T3G,
SURS8105T3G*
MURS110T3G, NRVUS110VT3G*
SURS8110T3G*
MURS115T3G, SURS8115T3G*
MURS120T3G, NRVUS120VT3G*
SURS8120T3G*
MURS140T3G, SURS8140T3G*,
MURS160T3G, NRVUS160VT3G*
SURS8160T3G*
Marking
U1A
U1B
U1C
U1D
U1G
U1J
Package
SMB
(Pb−Free)
SMB
(Pb−Free)
SMB
(Pb−Free)
SMB
(Pb−Free)
SMB
(Pb−Free)
SMB
(Pb−Free)
Shipping
2,500 Units / Tape & Reel
2,500 Units / Tape & Reel
2,500 Units / Tape & Reel
2,500 Units / Tape & Reel
2,500 Units / Tape & Reel
2,500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable.
www.onsemi.com
2
MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series
MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G,
SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G, NRVUS110VT3G, NRVUS120VT3G
10
IR, REVERSE CURRENT (
m
A)
7.0
5.0
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.08
0.04
0.02
0.008
0.004
0.002
0
20
40
60
T
J
= 175°C
3.0
175°C
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
2.0
T
C
= 25°C
1.0
0.7
0.5
100°C
T
J
= 100°C
T
J
= 25°C
80
100
120
140
160
180 200
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
0.3
0.2
50
0.1
45
0.07
C, CAPACITANCE (pF)
0.05
40
35
30
25
20
15
10
0.01
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
5.0
0
0
10
20
30
40
50
60
70
80
90
100
V
R
, REVERSE VOLTAGE (VOLTS)
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied V
R
is sufficiently
below rated V
R
.
0.03
0.02
Figure 1. Typical Forward Voltage
Figure 3. Typical Capacitance
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
80
90
100
110
120
130
140
150
160
170
180
T
C
, CASE TEMPERATURE (°C)
SQUARE WAVE
DC
RATED VOLTAGE APPLIED
R
qJC
= 13°C/W
T
J
= 175°C
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
5.0
T
J
= 175°C
4.0
(CAPACITANCE LOAD)
PK
+
20
I
I
10
5.0
3.0
AV
2.0
DC
SQUARE WAVE
1.0
0
0
0.5
1.0
1.5
2.0
2.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Case
Figure 5. Power Dissipation
www.onsemi.com
3
MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series
MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G
10
IR, REVERSE CURRENT (
m
A)
7.0
175°C
5.0
100°C
3.0
T
C
= 25°C
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
2.0
400
200
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.08
0.04
0.02
0.008
0.004
0
100
200
T
J
= 175°C
T
J
= 100°C
T
J
= 25°C
1.0
0.7
0.5
300
400
500
600
700
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Reverse Current*
0.3
0.2
25
0.1
0.07
0.05
C, CAPACITANCE (pF)
20
NOTE: TYPICAL
CAPACITANCE AT
0 V = 24 pF
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied V
R
is sufficiently
below rated V
R
.
15
0.03
0.02
10
5.0
0.01
0.3 0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
0
0
4.0
8.0
12
16
20
24
28
32
36
40
V
R
, REVERSE VOLTAGE (VOLTS)
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
Figure 6. Typical Forward Voltage
Figure 8. Typical Capacitance
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
20
40
60
80
100
120
140
160
180
200
T
C
, CASE TEMPERATURE (°C)
SQUARE WAVE
DC
RATED VOLTAGE APPLIED
R
qJC
= 13°C/W
T
J
= 175°C
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
5.0
(CAPACITANCE LOAD)
I
PK
+
20
I
10
5.0
SQUARE WAVE
4.0
AV
3.0
T
J
= 175°C
2.0
DC
1.0
0
0
0.5
1.0
1.5
2.0
2.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Current Derating, Case
Figure 10. Power Dissipation
www.onsemi.com
4
MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone:
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USA/Canada
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Order Literature:
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For additional information, please contact your local
Sales Representative
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MURS120T3/D
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