MUSES8820
High Quality Audio
Dual Operational Amplifier
s
GENERAL DESCRIPTION
The
MUSES8820
is a high quality audio operational amplifier, which
is optimized for high
-end
audio and professional audio applications.
It is the best for audio preamplifiers, active filters, and line amplifiers
with excellent sound.
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PACKAGE OUTLINE
MUSES8820D
MUSES8820E
s
FEATURES
●Operating
Voltage
●Output
noise
●Input
Offset Voltage
●Input
Bias Current
●Voltage
Gain
●Slew
Rate
●Bipolar
Technology
●Package
Outline
(DIP8)
Vopr =
±3.5V
to
±16V
4.5nV/√Hz at f=1kHz
0.3mV typ. 3mV max.
100nA typ. 500nA max. at Ta=25°C
110dB typ.
5V/µs typ.
DIP8, SOP8 JEDEC 150mil
(SOP8)
s
PIN CONFIGURATION
PIN FUNCTION
1
2
3
4
8
-+
+ -
7
6
5
1. A OUTPUT
2. A -INPUT
3. A +INPUT
4. V-
5. B +INPUT
6. B -INPUT
7. B OUTPUT
8.V+
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
Ver.2012-05-14
-1-
MUSES8820
s
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Supply Voltage
Common Mode Input Voltage
Differential Input Voltage
Power Dissipation
Output Current
Operating Temperature Range
Storage Temperature Range
SYMBOL
V /V
+
-
RATING
±18
±15
(Note1)
±30
DIP8 : 870
SOP8 : 900(Note2)
±50
-40 to +85
-50 to +150
UNIT
V
V
V
mW
mA
°C
°C
V
ICM
V
ID
P
D
I
O
T
opr
T
stg
(Note1) For supply Voltages less than
±15
V, the maximum input voltage is equal to the Supply Voltage.
(Note2) Mounted on the EIA/JEDEC standard board (114.3×76.2×1.6mm, two layer, FR-4).
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RECOMMENDED OPERATING CONDITION
(Ta=25°C)
PARAMETER
Supply Voltage
SYMBOL
V /V
+
-
TEST CONDITION
-
MIN.
±3.5
TYP.
-
MAX.
±16
UNIT
V
s
ELECTRIC CHARACTERISTICS
DC CHARACTERISTICS (V
+
/V
-
=±15V, Ta=25°C unless otherwise specified)
PARAMETER
Operating Current
Input Offset Voltage
Input Bias Current
Input Offset Current
Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Max Output Voltage
Input Common Mode Voltage
Range
SYMBOL
I
cc
V
IO
I
B
I
IO
A
V
CMR
SVR
V
OM
V
ICM
TEST CONDITION
No Signal, R
L
=∞
Rs≤10kΩ (Note3, 4)
(Note3, 4)
(Note3, 4)
R
L
≥2kΩ,
V
o
=±10V
Rs≤10kΩ
V
ICM
=±12V (Note5)
Rs≤10kΩ
V /V =±3.5 to
±16.0V
Rs≤10kΩ (Note3, 6)
R
L
=2kΩ
CMR≥80dB
+
-
MIN.
-
-
-
-
90
80
80
±12
±12
TYP.
8.0
0.3
100
5
110
110
110
±13.5
±13.5
MAX.
12.0
3.0
500
200
-
-
-
-
-
UNIT
mA
mV
nA
nA
dB
dB
dB
V
V
(Note3) Measured at VICM=0V
(Note4) Written by the absolute rate.
(Note5) CMR is calculated by specified change in offset voltage. (VICM=0V to +12V and VICM=0V to
−12V)
(Note6) SVR is calculated by specified change in offset voltage. (V+/V−=±3.5V to ±16V)
-2-
Ver.2012-05-14
MUSES8820
AC CHARACTERISTICS (V
+
/V
-
=±15V, Ta=25°C unless otherwise specified)
PARAMETER
Gain Bandwidth Product
Unity Gain Frequency
Phase Margin
Input Noise Voltage1
Input Noise Voltage2
Total Harmonic Distortion
Channel Separation
Positive Slew Rate
Negative Slew Rate
SYMBOL
GB
f
T
φ
M
V
NI
V
N2
THD
CS
+SR
-SR
TEST CONDITION
f=10kHz
A
V
=+100, R
S
=100Ω,
R
L
=2kΩ, C
L
=10pF
A
V
=+100, R
S
=100Ω,
R
L
=2kΩ,C
L
=10pF
f=1kHz, A
V
=+100,
R
S
=100Ω,R
L
=∞
f=1kHz, A
V
=+10
R
S
=2.2kΩ,
RIAA, 30kHz LPF
f=1kHz, A
V
=+10,
R
L
=2kΩ, Vo=5Vrms
f=1kHz, A
V
=-+100,
R
S
=1kΩ, R
L
=2kΩ
A
V
=1, V
IN
=2V
p-p
,
R
L
=2kΩ, C
L
=10pF
A
V
=1, V
IN
=2V
p-p
,
R
L
=2kΩ, C
L
=10pF
MIN.
-
-
-
-
-
-
-
-
-
TYP.
11
5.8
48
4.5
0.8
0.001
140
5
5
MAX.
-
-
-
-
1.4
-
-
-
-
UNIT
MHz
MHz
deg
nV/√Hz
µVrms
%
dB
V/µs
V/µs
Ver.2012-05-14
-3-
MUSES8820
s
Application Notes
•
Package Power, Power Dissipation and Output Power
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called
Power Dissipation P
D
. The dependence of the MUSES8820 P
D
on ambient temperature is shown in Fig 1. The plots are
depended on following two points. The first is P
D
on ambient temperature 25°C, which is the maximum power dissipation.
The second is 0W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature
Tjmax to the storage temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the P
D
lower than 25°C to it on 25°C. The P
D
is shown following formula as a function of the ambient temperature between those
points.
Dissipation Power
P
D
=
Tjmax - Ta
[W] (Ta=25°C to Ta=150°C)
θ
ja
Where,
θja
is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, P
D
is different in each package.
While, the actual measurement of dissipation power on MUSES8820 is obtained using following equation.
(Actual Dissipation Power) = (Supply Voltage V
DD
) X (Supply Current I
DD
) – (Output Power Po)
The MUSES8820 should be operated in lower than P
D
of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
P
D
[mW]
EMP8
DIP8
900
870
-40
25
Ta [deg]
85
(Topr max.)
150
(Tstg max.)
Fig.1 Power Dissipations vs. Ambient Temperature on the MUSES8820
-4-
Ver.2012-05-14
MUSES8820
s
TYPICAL CHARACTERISTICS
Total Harmonic Distortion+Noise
vs. Output Amplitude (Frequency)
V /V =±16V,Av=+10, Rg=1k,Rf=9.1k, R
L
=2k,Ta=25°C
+
-
+
Total Harmonic Distortion+Noise
vs. Output Amplitude (Frequency)
V /V =±15V,Av=+10, Rg=1k,Rf=9.1k, R
L
=2k,Ta=25°C
-
10
10
1
THD+Noise [%]
THD+Noise [%]
1
0.1
20kHz
0.1
20kHz
0.01
0.01
0.001
1kHz
20Hz
100Hz
0.001
1kHz
20Hz
100Hz
0.0001
0.01
0.1
1
10
0.0001
0.01
0.1
1
10
Output Amplitude [Vrms]
Output Amplitude [Vrms]
Total Harmonic Distortion + Noise
vs. Output Amplitude (Frequency)
V /V =±3.5V,Av=+10, Rg=1k,Rf=9.1k, R
L
=2k,Ta=25°C
+
-
Equivalent Input Voltage Noise vs.
Frequency
V /V =±16V,A
V
=+100,R
S
=100Ω,R
L
=∞,Ta=25ºC
∞
20
+
-
10
1
20kHz
0.1
Voltage Noise [nV/
√
Hz]
10
15
THD+Noise [%]
10
0.01
1kHz
0.001
100Hz
20Hz
5
0.0001
0.01
0
0.1
1
1
10
100
Frequency [Hz]
1,000
10,000
Output Amplitude [Vrms]
Equivalent Input Voltage Noise vs.
Frequency
V /V =±15V,A
V
=+100,R
S
=100Ω,R
L
=∞,Ta=25ºC
∞
20
20
+
-
+
Equivalent Input Voltage Noise vs.
Frequency
V /V =±3.5V,A
V
=+100,R
S
=100Ω,R
L
=∞,Ta=25ºC
∞
-
Voltage Noise [nV/
√
Hz]
10
Voltage Noise [nV/
√
Hz]
1
10
100
Frequency [Hz]
1,000
10,000
15
15
10
5
5
0
0
1
10
100
Frequency [Hz]
1,000
10,000
Ver.2012-05-14
-5-
