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MWT-2123Z-2P1

RF/Microwave Amplifier, 21200 MHz - 23600 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

器件类别:无线/射频/通信    射频和微波   

厂商名称:Microwave_Technology_Inc.

下载文档
器件参数
参数名称
属性值
包装说明
FLNG,.4"H.SPACE
Reach Compliance Code
unknown
构造
MODULE
增益
3.5 dB
最大工作频率
23600 MHz
最小工作频率
21200 MHz
最高工作温度
105 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC
封装等效代码
FLNG,.4"H.SPACE
电源
8 V
射频/微波设备类型
WIDE BAND MEDIUM POWER
最大压摆率
270 mA
技术
GAAS
最大电压驻波比
1.6
Base Number Matches
1
文档预览
MwT-2123S-2P1/2123Z-2P1
21.2-23.6 GHz Balanced Amplifier Module
www.mwtinc.com
Email: info@mwtinc.com
TYPICAL SPECIFICATIONS AT 25 C
24.0 dBm P-1dB
4.0 dB SMALL SIGNAL GAIN
15.0 dB INPUT/OUTPUT RETURN LOSS
200 mA @ +8V
Typical Output Power
at P1dB (dBm)
22.4
23.0
Frequency (GHz)
23.6
6.0
Typical Small
Signal Gain (dB)
5.0
4.0
3.0
2.0
26
25
24
23
22
22.4
23.0
Frequency (GHz)
23.6
ELECTRICAL SPECs OVER ANY 1.2 GHz BANDWIDTH (Ta=25 C)
SYMBOL
FREQ
SSG
G/ F
G/ T
P-1dB
PSAT
P/ T
IP3
2nd HAR
2nd HAR
NF
VSWR IN
VSWR OUT
ISO
VDD
IDD
RTH
PARAMETERS
Frequency Range
Small Signal Gain
SSG Flatness
SSG Variation over Temperature
Output Power at 1dB Compression
Output Power at 6 dB Compression
P-1dB Variation over Temperature
Third Order Intercept Point
2nd Harmonic at Pout=24.0 dBm
2nd Harmonic at Pout=24.5 dBm
Noise Figure
Input VSWR
Output VSWR
Reverse Isolation
Power Supply Voltage
Small Signal Module Current
Thermal Resistance Including FET*
UNITS
GHz
dB
+/-dB
dB/ C
dBm
dBm
dB/ C
dBm
dBc
dBc
dB
-----
-----
dB
+V
mA
C/W
MIN
21.2
3.5
TYP
MAX
23.6
4.0
0.3
-.012
24.0
24.5
-.008
36.0
-21.0
-16.0
8.5
1.4:1
1.4:1
-18.0
8.0
200.0
96.0
0.4
23.0
1.6:1
1.6:1
8.1
270.0
7.9
* When calculating Tch, use FET Vds = 6.0 volts and FET ds = 100 mA
(1) Select any bandwidth <= 1.2 GHz in this range.
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-2123S-2P1/2123Z-2P1
21.2-23.6 GHz Amplifier Module
.182
www.mwtinc.com
.088
.182
.088
.064
.158
.246
.246
Email: info@mwtinc.com
O
O
.110
.04
O
DC
.095
RF OUT
.064
.158
.025
DC
.095
.041
.04
.055
Max.
w/Caps
& Bond
Wires
O
.110
RF IN
.04
RF IN
.04
RF OUT
.390
.497
.405
DC
.390
.497
.405
DC
1. Dimension in Inches
2. Tolerance:
XXX= +/- .005
XX= +/- .01
“S”
Configurations
“Z”
Construction:
Construction
The 15 mil alumina substrates and 10 mil copper FET ridge are brazed onto the 25
mil carrier using AuGe preform. The GaAs FETs are attached to the Cu ridge
using AuSn preform. All capacitors are attached using AuSn preforms. The
flanges are designed to accommodate 0-80 UNF-2A socket or Fillister head
screws on .400 center-to-center hole spacing. The modules are mechanically and
electrically designed to be cascaded.
Notes:
1. Custom module specifications and/or custom module mechanical configurations are available.
2. Operating Temperature Range is -55 degrees Celsius to +105 degrees Celsius.
3. All modules are serialized and shipped with data measured at 25 degrees Celsius. Data
includes swept small signal gain, swept input and output return loss. Noise figure and
P-1dB are measured in 1 GHz increments. Special module testing is available.
4. Test Fixtures are available.
5. Microwave Technology reserves the right to ship modules with performance above the
typical specifications.
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
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参数对比
与MWT-2123Z-2P1相近的元器件有:MWT-2123S-2P1。描述及对比如下:
型号 MWT-2123Z-2P1 MWT-2123S-2P1
描述 RF/Microwave Amplifier, 21200 MHz - 23600 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER RF/Microwave Amplifier, 21200 MHz - 23600 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
包装说明 FLNG,.4"H.SPACE FLNG,.4\"H.SPACE
Reach Compliance Code unknown unknown
构造 MODULE MODULE
增益 3.5 dB 3.5 dB
最大工作频率 23600 MHz 23600 MHz
最小工作频率 21200 MHz 21200 MHz
最高工作温度 105 °C 105 °C
最低工作温度 -55 °C -55 °C
封装主体材料 CERAMIC CERAMIC
封装等效代码 FLNG,.4"H.SPACE FLNG,.4\"H.SPACE
电源 8 V 8 V
射频/微波设备类型 WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
最大压摆率 270 mA 270 mA
技术 GAAS GAAS
最大电压驻波比 1.6 1.6
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