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MX3EZ68D3E3

Zener Diode, 68V V(Z), 3%, 1.25W, Silicon, Unidirectional, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Microsemi
零件包装代码
DO-41
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JEDEC-95代码
DO-204AL
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1.25 W
认证状态
Not Qualified
标称参考电压
68 V
表面贴装
NO
技术
ZENER
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
3%
工作测试电流
11 mA
Base Number Matches
1
文档预览
3EZ3.9D5 thru 3EZ200D5, e3
Silicon 3 Watt Zener Diode
SCOTTSDALE DIVISION
DESCRIPTION
The 3EZ3.9D5 thru 3EZ200D5 series of axial-leaded 3.0 watt Zeners
provides voltage regulation selections with 5% tolerances from 3.9 to 200
volts in a DO-41 plastic package size. Other Zener voltage tolerances are
also available by changing the suffix number to the tolerance desired such
as 1, 2 3, or 4 for tighter tolerances or 10 for wider tolerance. These plastic
encapsulated Zeners are also available in various military equivalent
screening levels by adding a prefix identifier as also described in the
Features section. They may be operated at high maximum dc currents or
full power rating with adequate heat. Microsemi also offers numerous other
Zener products to meet higher and lower power applications.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-41 or
DO-204AL
(Plastic)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Zener voltage available 3.9 V to 200 V
Standard voltage tolerances are plus/minus 5% with
a 5 suffix and 10 % with 10 suffix identification
Tight tolerances available in plus or minus 4%, 3%,
2% or 1% with 4, 3, 2, or 1 suffix respectively
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers.
Surface mount equivalents available as
SMBJ3EZ3.9D5 to SMBJ3EZ200D5 in the DO-
214AA package, or SMBG3EZ3.9D5 to
SMBG3EZ200D5 in the DO-215AA package
RoHS compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
3 W capability in relatively small DO-41 package
size when adequately heat sunk (see Figure 1)
Wide selection from 3.9 to 200 V
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
Withstands surge stresses
High specified maximum current (I
ZM
) when
adequately heat sunk
MAXIMUM RATINGS
Power dissipation at 25
º
C: 3.0 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
º
C to +150
º
C
Thermal Resistance: 40
º
C/W junction to lead at 3/8
(10 mm) lead length from body, or 100
º
C/W junction
to ambient when mounted on FR4 PC board (1oz Cu)
with 4 mm
2
copper pads and track width 1 mm, length
25 mm
o
Steady-State Power: 3 watts at T
L
< 30 C 3/8 inch
(10 mm) from body, or 1.25 watts at T
A
= 25
º
C when
mounted on FR4 PC described for thermal resistance
(also see Figure 1)
Forward voltage @200 mA: 1.2 volts (maximum)
Solder Temperatures: 260
º
C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: Leads, tin-lead or RoHS compliant
annealed matte-Tin plating solderable per MIL-
STD-750, method 2026
POLARITY: Cathode indicated by band where
diode is to be operated with the banded end
positive with respect to the opposite end for Zener
regulation
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.4 grams
See package dimensions on last page
3EZ3.9D5
3EZ200D5, e3
Copyright
©
2006
6-20-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
3EZ3.9D5 thru 3EZ200D5, e3
Silicon 3 Watt Zener Diode
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS @ 25
o
C
MICRO
TYPE
NUMBER
(Note 1)
NOMINAL ZENER
VOLTAGE
(Note 2)
V
Z
@
I
ZT
MAXIMUM ZENER IMPEDANCE
(Note 3)
Z
ZT
@ I
ZT
Z
ZK
@
I
ZK
MAXIMUM
REVERSE
CURRENT
I
R
@ V
R
MAXIMUM
ZENER
CURRENT
I
ZM
MAXIMUM
SURGE
CURRENT
(Note 4)
I
ZSM
WWW .
Microsemi
.C
OM
3EZ3.9D5
3EZ200D5, e3
VOLTS
mA
OHMS
OHMS
mA
VOLTS
mA
A
μA
3EZ3.9D5
3.9
192
4.5
400
1.0
80
1.0
630
4.4
3EZ4.3D5
4.3
174
4.5
400
1.0
30
1.0
590
4.1
3EZ4.7D5
4.7
160
4.0
500
1.0
20
1.0
550
3.8
3EZ5.1D5
5.1
147
3.5
550
1.0
5.0
1.0
520
3.5
3EZ5.6D5
5.6
134
2.5
600
1.0
5.0
2.0
480
3.3
3EZ6.2D5
6.2
121
1.5
700
1.0
5.0
3.0
435
3.1
3EZ6.8D5
6.8
110
2.0
700
1.0
5.0
4.0
393
2.9
3EZ7.5D5
7.5
100
2.0
700
0.5
5.0
5.0
360
2.66
3EZ8.2D5
8.2
91
2.3
700
0.5
5.0
6.0
330
2.44
3EZ9.1D5
9.1
82
2.5
700
0.5
3.0
7.0
297
2.2
3EZ10D5
10
75
3.5
700
0.25
3.0
7.6
270
2.0
3EZ11D5
11
68
4.0
700
0.25
1.0
8.4
225
1.82
3EZ12D5
12
63
4.5
700
0.25
1.0
9.1
246
1.66
3EZ13D5
13
58
4.5
700
0.25
0.5
9.9
208
1.54
3EZ14D5
14
53
5.0
700
0.25
0.5
10.6
193
1.43
3EZ15D5
15
50
5.5
700
0.25
0.5
11.4
180
1.33
3EZ16D5
16
47
5.5
700
0.25
0.5
12.2
169
1.25
3EZ17D5
17
44
6.0
750
0.25
0.5
13
150
1.18
3EZ18D5
18
42
6.0
750
0.25
0.5
13.7
159
1.11
3EZ19D5
19
40
7.0
750
0.25
0.5
14.4
142
1.05
3EZ20D5
20
37
7.0
750
0.25
0.5
15.2
135
1.0
3EZ22D5
22
34
8.0
750
0.25
0.5
16.7
123
0.91
3EZ24D5
24
31
9.0
750
0.25
0.5
18.2
112
0.83
3EZ27D5
27
28
10
750
0.25
0.5
20.6
100
0.74
3EZ28D5
28
27
12
750
0.25
0.5
21
96
0.71
3EZ30D5
30
25
16
1000
0.25
0.5
22.5
90
0.67
3EZ33D5
33
23
20
1000
0.25
0.5
25.1
82
0.61
3EZ36D5
36
21
22
1000
0.25
0.5
27.4
75
0.56
3EZ39D5
39
19
28
1000
0.25
0.5
29.7
69
0.51
3EZ43D5
43
17
33
1500
0.25
0.5
32.7
63
0.45
3EZ47D5
47
16
38
1500
0.25
0.5
35.6
57
0.42
3EZ51D5
51
15
45
1500
0.25
0.5
38.8
53
0.39
3EZ56D5
56
13
50
2000
0.25
0.5
42.6
48
0.36
3EZ62D5
62
12
55
2000
0.25
0.5
47.1
44
0.32
3EZ68D5
68
11
70
2000
0.25
0.5
51.7
40
0.29
3EZ75D5
75
10
85
2000
0.25
0.5
56
36
0.27
3EZ82D5
82
9.1
95
3000
0.25
0.5
62.2
33
0.24
3EZ91D5
91
8.2
115
3000
0.25
0.5
69.2
30
0.22
3EZ100D5
100
7.5
160
3000
0.25
0.5
76
27
0.20
3EZ110D5
110
6.8
225
4000
0.25
0.5
83.6
25
0.18
3EZ120D5
120
6.3
300
4500
0.25
0.5
91.2
22
0.16
3EZ130D5
130
5.8
375
5000
0.25
0.5
98.8
21
0.15
3EZ140D5
140
5.3
475
5000
0.25
0.5
106.4
19
0.14
3EZ150D5
150
5.0
550
6000
0.25
0.5
114
18
0.13
3EZ160D5
160
4.7
625
6500
0.25
0.5
121.6
17
0.12
3EZ170D5
170
4.4
650
7000
0.25
0.5
130.4
16
0.12
3EZ180D5
180
4.2
700
7000
0.25
0.5
136.8
15
0.11
3EZ190D5
190
4.0
800
8000
0.25
0.5
144.8
14
0.10
3EZ200D5
200
3.7
875
8000
0.25
0.5
152
13
0.10
NOTES:
1. Suffix 1 indicates +/-1% tolerance, suffix 2 indicates +/-2% tolerance, suffix 3 indicates +/-3% tolerance, suffix 4 indicates +/-4%
tolerance, suffix 5 indicates +/-5% tolerance. Suffix 10 indicates +/-10%, no suffix indicates +/-20%.
2. The V
Z
is measured by applying I
Z
40 ms +/-10 ms prior to reading. Mounting contacts are located 3/8” to ½” from inside edge of
o
o
o
mounting clips. Ambient temperature, T
A
= 25 C (+8 C/-2 C).
3. The zener impedance is derived from the 60 cycle ac voltage resulting from an ac current having an rms value equal to 10%
of the dc zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
4. Maximum Surge Current is a non-recurrent maximum peak reverse surge with a pulse width of 8.3 ms.
Copyright
©
2006
6-20-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
3EZ3.9D5 thru 3EZ200D5, e3
Silicon 3 Watt Zener Diode
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
3EZ
110
D
5
TOLERANCE
3 WATT
MOLDED
ZENER
DIODE
NOMINAL
ZENER
VOLTAGE
DEVICE
GRAPHS
P
d
, Maximum Rated Power Dissipation (mW)
T
L
T
A
on FR4 PC
board
PACKAGE DIMENSIONS
o
T
L
, Lead temperature ( C) at 3/8” from body
or T
A
on FR4 PC Board
FIGURE 1
POWER DERATING CURVE
3EZ3.9D5
3EZ200D5, e3
Copyright
©
2006
6-20-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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