MRT100KP40A – MRT100KP400CA(e3)
Screening in
reference to
MIL-PRF-19500
available
Available
Unidirectional and Bidirectional Transient
Voltage Suppressor (TVS) Device
DESCRIPTION
These MRT100KP40A – MRT100KP400CA high reliability devices protect against dangerous
high-voltage, short term transients such as those caused the the secondary effects of lightning
per IEC61000-4-5 (see protection classes below) and RTCA/DO-160. They also protect
against voltage spikes caused by inductive load switching, induced RFI, and ESD or EFT per
IEC61000-4-2 and IEC61000-4-4. Clamping time is nearly instantaneous at < 5ns.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
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•
Available in both unidirectional and bidirectional configurations
Suppresses transients up to 100 kW @ 6.4/69
µs
Fast response with less than 5 ns turn-on time
Preferred 100 kW TVS for aircraft power bus protection
3σ lot norm screening performed on standby current I
D
100% surge tested devices
Multiple screening levels in reference to MIL-PRF-19500 are available. Refer to
Hirel Non-
Hermetic Product Portfolio
for more details on the screening options.
(See
part nomenclature
for all options.)
High reliability controlled devices have wafer fabrication and assembly lot traceability
Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant versions are available
DO-204AR
Package
•
•
•
APPLICATIONS / BENEFITS
•
•
•
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Economical TVS series for thru-hole mounting
Protection from high power switching transients, induced RF, and lightning threats with
comparatively small package size (0.25 inch diameter)
Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4
Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 4 (6.4/69 μs) on all devices
Pin injection protection per RTCA/DO-160 up to Level 5 for Waveform 4 (6.4/69 μs) on device types
MRT100KP33A or CA up to MRT100KP260A or CA
Pin injection protection per RTCA/DO-160 up to Level 3 for Waveform 5A (40/120 μs) on all devices
Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 5A (40/120 μs) on device
types MRT100KP33A or CA up to MRT100KP64A or CA
Consult Factory for other voltages with similar Peak Pulse Power (P
PP
) capabilities
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01012, Rev. C (15/06/15)
©2015 Microsemi Corporation
Page 1 of 7
MRT100KP40A – MRT100KP400CA(e3)
MAXIMUM RATINGS
@ 25 ºC unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm)
lead length from body
(1)
Thermal Resistance, Junction to Ambient
(2)
Peak Pulse Power Dissipation
6.4/69
µs
Steady-State Power Dissipation @ T
A
= 25 ºC
T
clamping
(0 volts to V
(
BR)
min, theoretical)
Surge Peak Forward Current
Solder Temperature @ 10 s
(2)
Symbol
T
J
and
T
STG
R
ӨJL
R
ӨJA
P
PP
P
D
Value
-65 to +150
17.5
77.5
100
7
(1)
1.61
< 100
<5
250
260
Unit
o
C
o
C/W
C/W
kW
W
ps
ns
A
o
C
o
Unidirectional
Bidirectional
I
FSM
Notes:
1. When mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and track width 1 mm, length 25 mm.
2. At 8.3 ms half-sine wave (unidirectional only).
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable per MIL-STD-750, method 2026.
MARKING: Part number
POLARITY: Cathode indicated by band. No cathode band on bidirectional devices.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 1.7 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level
M
MA
MX
MXL
(*See
Hirel Non-Hermetic
Product Portfolio)
RTCA/DO-160 Rated
Peak Pulse Power
Kilowatt Rating
Encapsulated Plastic
Package
RT 100 K P 40
C A
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Voltage Tolerance
A = 5% tolerance level
Blank = 10% tolerance
Polarity
C = Bi-directional
Blank = Unidirectional
Stand-off Voltage Rating
(see
Electrical Characteristics
table)
RF01012, Rev. C (15/06/15)
©2015 Microsemi Corporation
Page 2 of 7
MRT100KP40A – MRT100KP400CA(e3)
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR)
Symbol
α
V(BR)
V
W M
P
PP
V
(
BR)
I
D
I
PP
V
C
I
(BR)
RF01012, Rev. C (15/06/15)
©2015 Microsemi Corporation
Page 3 of 7
MRT100KP40A – MRT100KP400CA(e3)
ELECTRICAL CHARACTERISTICS
@ 25 ºC
Part
Number
Rated
Stand-off
Voltage
V
WM
Volts
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
180
200
220
250
260
280
300
350
400
Breakdown Voltage
V
(BR)
Volts
@ I
(BR)
V
(BR)
Volts
44.4-49.1
47.8-52.8
50.0-55.3
53.3-58.9
56.7-62.7
60.0-66.3
64.4-71.2
66.7-73.7
71.1-78.6
77.8-86.0
83.3-92.1
86.7-95.8
94.4-104
100-111
111-123
122-135
133-147
144-159
167-185
178-197
189-209
200-221
222-245
245-271
278-308
289-320
311-345
333-369
389-431
444-492
I
(BR)
mA
20
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Maximum
Clamping
(1)
@ I
PP
V
C
Volts
78.6
84.5
88.5
94.3
101
106
114
118
126
138
147
153
166
178
197
216
235
254
296
315
334
354
392
434
493
512
552
590
690
787
Maximum
Reverse
Leakage
@ V
WM
I
D
µAmps
1500
500
150
150
50
25
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Maximum
Peak Pulse
Current
(2)
@ 6.4/69 µs
I
PP
Amps
1273 *
1184 *
1130 *
1061 *
990 *
943 *
878
848
795
725
680
655
602
563
508
463
426
394
338
318
300
283
256
231
203
196
181
170
145
127
Maximum
V
(BR)
Temperature
Coefficient
α
V(BR)
mV/°C
46
50
52
56
60
63
68
71
76
83
89
93
102
109
121
133
145
157
183
195
207
219
243
269
306
318
344
368
430
490
MRT100KP40A
MRT100KP43A
MRT100KP45A
MRT100KP48A
MRT100KP51A
MRT100KP54A
MRT100KP58A
MRT100KP60A
MRT100KP64A
MRT100KP70A
MRT100KP75A
MRT100KP78A
MRT100KP85A
MRT100KP90A
MRT100KP100A
MRT100KP110A
MRT100KP120A
MRT100KP130A
MRT100KP150A
MRT100KP160A
MRT100KP170A
MRT100KP180A
MRT100KP200A
MRT100KP220A
MRT100KP250A
MRT100KP260A
MRT100KP280A
MRT100KP300A
MRT100KP350A
MRT100KP400A
NOTES:
1.
Clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4
µs
rise time due
to lead length.
The maximum peak pulse current (I
PP
) shown represents the performance capabilities by design.
*Surge test screening is only performed up to 900 Amps (test equipment limitations).
2.
RF01012, Rev. C (15/06/15)
©2015 Microsemi Corporation
Page 4 of 7
MRT100KP40A – MRT100KP400CA(e3)
GRAPHS
P
PP
Peak Pulse Power vs. Pulse Time – kW
Non-Repetitive Pulse
tp – Pulse Time – sec.
FIGURE 1
Peak Pulse Power vs. Pulse Time
To 50% of Exponentially Decaying Pulse
Peak Pulse Power (P
PP
) or
Continuous Power in % of 25°C rating
T
L
Lead Temperature °C
FIGURE 2
Power Derating
NOTE:
This P
PP
versus time graph allows the designer to use these
parts over a broad power spectrum using the guidelines illustrated in
MicroNote 104
on
www.microsemi.com.
Aircraft transients are described
with exponential decaying waveforms. For suppression of square-wave
impulses, derate power and current to 66% of that for the exponential
decay shown in Figure 1.
CORRECT
INSTALLATION
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the
mounting leads. Minimizing the shunt path
of the lead inductance and their V =
-Ldi/dt effects will optimize the TVS
effectiveness. Examples of optimum
installation and poor installation are
illustrated in Figures 3 to 6. Figure 3
illustrates minimal parasitic inductance
with attachment at end of device.
Inductive voltage drop is across the input
leads. Virtually no “overshoot” voltage
results as illustrated with Figure 4. The
loss of effectiveness in protection caused
by excessive parasitic inductance is
illustrated in Figures 5 and 6. Also see
MicroNote 111
for further information on
“Parasitic Lead Inductance in TVS”.
INCORRECT
FIGURE 3
FIGURE 5
FIGURE 4
FIGURE 6
RF01012, Rev. C (15/06/15)
©2015 Microsemi Corporation
Page 5 of 7
传感器
