MSMBG2K3.0 – MSMBG2K5.0,
MSMBJ2K3.0 – MSMBJ2K5.0
Available
2 kW Surface Mount
Transient Voltage Suppressor
DESCRIPTION
Screening in
reference to
MIL-PRF-19500
available
The MSMBG(J)2K3.0 – MSMBG(J)2K5.0 series of surface mount 2.0 kilowatt transient voltage
suppressors provide a selection of standoff voltages (V
WM
) from 3.0 to 5.0 volts. These high-
reliability controlled devices feature unidirectional construction. The SMBG Gull-wing design
in the DO-215AA package is ideal for visible solder connections. The SMBJ J-bend design in
the DO-214AA package is ideal for greater PC board mounting density. It is also available as
RoHS compliant.
DO-215AA
(SMBG) Package
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
High reliability upscreened devices with wafer fabrication and assembly lot traceability.
All devices 100% surge tested.
Suppresses transients up to 2 kW @ 8/20 µs.
Other screening in reference to MIL-PRF-19500 is also available. Refer to
MicroNote 129
for more
details on the screening options.
(See
part nomenclature
for all options.)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
3σ lot norm screening performed on standby current I
D
.
RoHS compliant versions available.
•
•
•
DO-214AA
(SMBJ) Package
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
APPLICATIONS / BENEFITS
•
•
•
•
•
Voltage and reverse standby (leakage) current lowest available.
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & induced RF.
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance for class 1.
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Peak Pulse Power Dissipation
Off-State Power Dissipation
T
clamping
(0 volts to V
(
BR)
min)
Forward Voltage @ 30 A
(3)
(1)
Symbol
T
J
and
T
STG
8/20 us
10/1000us
@ T
L
< 25 ºC
@ T
A
= 25 ºC
P
PP
P
D
Value
-65 to +150
2000
300
5
(2)
1.38
<100
1.2
260
Unit
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
W
W
ps
V
o
V
F
T
SP
Solder Temperature @ 10 s
C
Notes:
1. With impulse repetition rate (duty factor) of 0.01 maximum (also
Figure 1 and 4).
2. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see
last page).
3. Peak impulse of 8.3 ms half-sine wave.
RF01019, Rev. B (2/11/13)
©2013 Microsemi Corporation
Page 1 of 6
MSMBG2K3.0 – MSMBG2K5.0,
MSMBJ2K3.0 – MSMBJ2K5.0
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating readily solderable per MIL- STD-750, method 2026.
MARKING: Part number.
POLARITY: Cathode end banded.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: 0.1 grams (approximate).
See
package dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M
MA
MX
MXL
*(see
MicroNote 129)
Surface Mount Package
SM
B
G
2K 3.0
(e3)
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Stand-Off Voltage (V
WM
)
(see
Electrical Characteristics
table)
2 kW Transient Suppression
Package Size
Lead Form
G = Gull-Wing
J = J-Bend
Symbol
V
W M
P
PP
V
(
BR)
I
D
I
PP
V
C
SYMBOLS & DEFINITIONS
Definition
Working Peak (Standoff) Voltage - The maximum peak voltage that can be applied over the operating temperature
range. This is also referred to as standoff voltage.
Peak Pulse Power - Rated random recurring peak impulse power dissipation.
Breakdown Voltage - The minimum voltage the device will exhibit at a specified current.
Standby Current - The current at the rated standoff voltage (V
WM
).
Peak Pulse Current - The peak current during the impulse.
Clamping Voltage - Clamping voltage at I
PP
(Peak Pulse Current) at the specified pulse conditions (typically shown
as maximum value).
Breakdown Current – The current used for measuring breakdown voltage V
(
BR)
.
I
( BR)
ELECTRICAL CHARACTERISTICS
@ 25 ºC
BREAKDOWN
VOLTAGE
Minimum
BREAKDOWN
CURRENT
RATED
STANDOFF
VOLTAGE
MAX
STANDBY
CURRENT
MAX
CLAMPING
VOLTAGE
PEAK
PULSE
CURRENT
TEMPERATURE
COEFFICIANT
of V
(BR)
PART NUMBER
V
(
BR)
Gull-Wing
MSMBG2K3.0
MSMBG2K3.3
MSMBG2K4.0
MSMBG2K4.5
MSMBG2K5.0
J-Bend
MSMBJ2K3.0
MSMBJ2K3.3
MSMBJ2K4.0
MSMBJ2K4.5
MSMBJ2K5.0
V
4.3
4.6
5.0
5.4
5.9
I
(BR)
mA
50
50
50
50
50
V
WM
V
3.0
3.3
4.0
4.5
5.0
I
D
@ V
WM
µA
1500
700
400
50
5
V
C
@ I
PP
V
5.4
5.8
6.3
6.6
7.6
I
PP
A
10
10
10
10
10
α
V(BR)
% /
o
C
+0/ -0.05
±0.025
±0.030
±0.040
+0.050
RF01019, Rev. B (2/11/13)
©2013 Microsemi Corporation
Page 2 of 6
MSMBG2K3.0 – MSMBG2K5.0,
MSMBJ2K3.0 – MSMBJ2K5.0
GRAPHS
P
PP
– Peak Pulse Power - kW
t
w
- Pulse Width - µs
FIGURE 1
Peak Pulse Power vs Pulse Time
I
PP
–
Peak Pulse Current
–
%
I
pp
Test waveform parameters tr=8 µs, tp=20 µs
FIGURE 2
Pulse Waveform for 8/20 µs Exponential Surge
RF01019, Rev. B (2/11/13)
©2013 Microsemi Corporation
Page 3 of 6
MSMBG2K3.0 – MSMBG2K5.0,
MSMBJ2K3.0 – MSMBJ2K5.0
GRAPHS
(continued)
Pulse Current in Percent of I
PP
t – Time – ms
Test waveform parameters: tr=10 µs, tp=1000µs
FIGURE 3
Pulse Waveform for 10/1000 Exponential Surge
Peak Pulse Power (P
PP
)
or continuous
Power in Percent of 25°C Ratio
T
L
Lead Temperature °C
FIGURE 4
Derating Curve
RF01019, Rev. B (2/11/13)
©2013 Microsemi Corporation
Page 4 of 6
MSMBG2K3.0 – MSMBG2K5.0,
MSMBJ2K3.0 – MSMBJ2K5.0
PACKAGE DIMENSIONS
SMBG (DO-215AA)
Ltr
A
B
C
E
F
K
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.077 0.083
1.96
2.10
0.160 0.180
4.06
4.57
0.130 0.155
3.30
3.94
0.077 0.104
1.95
2.65
0.235 0.255
5.97
6.48
0.015 0.030 0.381 0.762
SMBJ (DO-214AA)
Ltr
A
B
C
D
E
L
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.077 0.083
1.96
2.10
0.160 0.180
4.06
4.57
0.130 0.155
3.30
3.94
0.205 0.220
5.21
5.59
0.077 0.104
1.95
2.65
0.030 0.060 0.760
1.52
See pad layout on next page.
RF01019, Rev. B (2/11/13)
©2013 Microsemi Corporation
Page 5 of 6
