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MXLSMCJLCE45

Trans Voltage Suppressor Diode, 45V V(RWM), Unidirectional,

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Microsemi
Reach Compliance Code
unknow
ECCN代码
EAR99
击穿电压标称值
55.55 V
最大钳位电压
80.3 V
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
极性
UNIDIRECTIONAL
最大重复峰值反向电压
45 V
表面贴装
YES
文档预览
SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
SCOTTSDALE DIVISION
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
APPEARANCE
DESCRIPTION
This surface mount Transient Voltage Suppressor (TVS) product family includes a
rectifier diode element in series and opposite direction to achieve low capacitance
below 100 pF. They are also available as RoHS Compliant with an e3 suffix. The low
TVS capacitance may be used for protecting higher frequency applications in inductive
switching environments or electrical systems involving secondary lightning effects per
IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics. They
also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar
transient capability is required, two of these low capacitance TVS devices may be used
in parallel and opposite directions (anti-parallel) for complete ac protection (Figure 6).
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
WWW .
Microsemi
.C
OM
FEATURES
Available in standoff voltage range of 6.5 to 200 V
Low capacitance of 100 pF or less
Molding compound flammability rating: UL94V-O
Two different terminations available in C-bend (modified J-
Bend with DO-214AB) or Gull-wing (DO-215AB)
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are available by adding MQ,
MX, or MV prefixes respectively to part numbers
Optional 100% screening for avionics grade is available by
adding MA prefix to part number for 100% temperature
cycle –55ºC to 125ºC (10X) as well as surge (3X) and 24
hours HTRB with post test V
BR
& I
R
RoHS Compliant devices available by adding an “e3” suffix
APPLICATIONS / BENEFITS
1500 Watts of Peak Pulse Power at 10/1000
μs
Low capacitance for data line protection to 1 MHz
Protection for aircraft fast data rate lines up to
Level 5 Waveform 4 and Level 2 Waveform 5A in
RTCA/DO-160D (also see MicroNote 130) &
ARINC 429 with bit rates of 100 kb/s (per ARINC
429, Part 1, par 2.4.1.1)
IEC61000-4-2 ESD 15 kV (air), 8 kV (contact)
IEC61000-4-5 (Lightning) as further detailed in
LCE6.5 thru LCE170A data sheet
T1/E1 Line Cards
Base Stations, WAN & XDSL Interfaces
CSU/DSU Equipment
MAXIMUM RATINGS
1500 Watts of Peak Pulse Power dissipation at 25 C
with
repetition rate of 0.01% or less*
o
MECHANICAL AND PACKAGING
CASE: Molded, surface mountable
TERMINALS: Gull-wing or C-bend (modified J-
bend) tin-lead or RoHS compliant annealed
matte-tin plating solderable per MIL-STD-750,
method 2026
POLARITY: Cathode indicated by band
MARKING: Part number with abbreviated prefix
(CLC6.5A, CLC6.5Ae3, CLC33, CLC33e3, etc.)
TAPE & REEL option: Standard per EIA-481-B
with 16 mm tape, 750 per 7 inch reel or 2500 per
13 inch reel (add “TR” suffix to part number)
Clamping Factor: 1.4 @ Full Rated power
1.30 @ 50% Rated power
-9
t
clamping
(0 volts to V
(BR)
min): Less than 5x10 seconds
Operating and Storage temperatures: -65 to +150
o
C
Steady State power dissipation: 5.0W @ T
L
= 50
o
C
THERMAL RESISTANCE: 20
o
C/W (typical junction to
lead (tab) at mounting plane
* When pulse testing, do not pulse in opposite direction
(see “Schematic Applications” section herein and
Figures 5 & 6 for further protection in both directions)
ELECTRICAL CHARACTERISTICS @ 25
o
C
MICROSEMI
Part Number
Gull-Wing
“G”
Bend Lead
SMCGLCE6.5
SMCGLCE6.5A
SMCGLCE7.0
SMCGLCE7.0A
SMCGLCE7.5
SMCGLCE7.5A
SMCGLCE8.0
SMCGLCE8.0A
SMCGLCE8.5
SMCGLCE8.5A
SMCGLCE9.0
SMCGLCE9.0A
SMCGLCE/SMCJLCE, e3
MICROSEMI
Part Number
Modified
“J”
Bend Lead
SMCJLCE6.5
SMCJLCE6.5A
SMCJLCE7.0
SMCJLCE7.0A
SMCJLCE7.5
SMCJLCE7.5A
SMCJLCE8.0
SMCJLCE8.0A
SMCJLCE8.5
SMCJLCE8.5A
SMCJLCE9.0
SMCJLCE9.0A
Reverse
Stand-Off
Voltage
Breakdown Voltage
V
BR
Volts
MIN
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
@ I
(BR)
Maximum
Reverse
Leakage
Maximum
Clamping
Voltage
V
WM
Volts
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
@V
WM
MAX
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
mA
10
10
10
10
10
10
1
1
1
1
1
1
@I
PP
V
C
Volts
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
I
D
μA
1000
1000
500
500
250
250
100
100
50
50
10
10
Maximum
Peak Pulse
Current
I
PP
@10/1000
Amps
100
100
100
100
100
100
100
100
94
100
89
97
Maximum
Capacitance
@ 0 Volts,
f = 1 MHz
pF
100
100
100
100
100
100
100
100
100
100
100
100
V
WIB
Working
Inverse
Blocking
Voltage
Volts
75
75
75
75
75
75
75
75
75
75
75
75
I
IB
Inverse
Blocking
Leakage
Current
μA
10
10
10
10
10
10
10
10
10
10
10
10
V
PIB
Peak
Inverse
Blocking
Voltage
Volts
100
100
100
100
100
100
100
100
100
100
100
100
Copyright
©
2009
2-11-2009 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
SCOTTSDALE DIVISION
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
Maximum
Reverse
Leakage
@
V
WM
I
D
μA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MICROSEMI
Part Number
Gull-Wing
“G”
Bend Lead
SMCGLCE10
SMCGLCE10A
SMCGLCE11
SMCGLCE11A
SMCGLCE12
SMCGLCE12A
SMCGLCE13
SMCGLCE13A
SMCGLCE14
SMCGLCE14A
SMCGLCE15
SMCGLCE15A
SMCGLCE16
SMCGLCE16A
SMCGLCE17
SMCGLCE17A
SMCGLCE18
SMCGLCE18A
SMCGLCE20
SMCGLCE20A
SMCGLCE22
SMCGLCE22A
SMCGLCE24
SMCGLCE24A
SMCGLCE26
SMCGLCE26A
SMCGLCE28
SMCGLCE28A
SMCGLCE30
SMCGLCE30A
SMCGLCE33
SMCGLCE33A
SMCGLCE36
SMCGLCE36A
SMCGLCE40
SMCGLCE40A
SMCGLCE43
SMCGLCE43A
SMCGLCE45
SMCGLCE45A
SMCGLCE48
SMCGLCE48A
SMCGLCE51
SMCGLCE51A
SMCGLCE54
SMCGLCE54A
SMCGLCE58
SMCGLCE58A
SMCGLCE60
SMCGLCE60A
SMCGLCE64
SMCGLCE64A
SMCGLCE70
SMCGLCE70A
SMCGLCE75
SMCGLCE75A
SMCGLCE80
SMCGLCE80A
SMCGLCE90
SMCGLCE90A
SMCGLCE100
SMCGLCE100A
SMCGLCE110
SMCGLCE110A
SMCGLCE120
SMCGLCE120A
SMCGLCE130
SMCGLCE130A
SMCGLCE150
SMCGLCE150A
SMCGLCE160
SMCGLCE160A
SMCGLCE170
SMCGLCE170A
MICROSEMI
Part Number
Modified
“J”
Bend Lead
SMCJLCE10
SMCJLCE10A
SMCJLCE11
SMCJLCE11A
SMCJLCE12
SMCJLCE12A
SMCJLCE13
SMCJLCE13A
SMCJLCE14
SMCJLCE14A
SMCJLCE15
SMCJLCE15A
SMCJLCE16
SMCJLCE16A
SMCJLCE17
SMCJLCE17A
SMCJLCE18
SMCJLCE18A
SMCJLCE20
SMCJLCE20A
SMCJLCE22
SMCJLCE22A
SMCJLCE24
SMCJLCE24A
SMCJLCE26
SMCJLCE26A
SMCJLCE28
SMCJLCE28A
SMCJLCE30
SMCJLCE30A
SMCJLCE33
SMCJLCE33A
SMCJLCE36
SMCJLCE36A
SMCJLCE40
SMCJLCE40A
SMCJLCE43
SMCJLCE43A
SMCJLCE45
SMCJLCE45A
SMCJLCE48
SMCJLCE48A
SMCJLCE51
SMCJLCE51A
SMCJLCE54
SMCJLCE54A
SMCJLCE58
SMCJLCE58A
SMCJLCE60
SMCJLCE60A
SMCJLCE64
SMCJLCE64A
SMCJLCE70
SMCJLCE70A
SMCJLCE75
SMCJLCE75A
SMCJLCE80
SMCJLCE80A
SMCJLCE90
SMCJLCE90A
SMCJLCE100
SMCJLCE100A
SMCJLCE110
SMCJLCE110A
SMCJLCE120
SMCJLCE120A
SMCJLCE130
SMCJLCE130A
SMCJLCE150
SMCJLCE150A
SMCJLCE160
SMCJLCE160A
SMCJLCE170
SMCJLCE170A
Reverse
Stand-Off
Voltage
Breakdown Voltage
V
BR
@
I
(BR)
Volts
MIN
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
88.7
88.7
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
MAX
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
353
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
85.0
102
92.1
108
98.0
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
WM
Volts
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
80
80
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Clamping
Voltage
@
I
PP
V
C
Volts
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.5
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
142
129
160
146
179
162
196
178
214
193
231
209
268
243
287
259
304
275
Maximum
Peak Pulse
Current
I
PP
@10/1000
Amps
80
88
74
82
68
75
63
70
58
65
56
61
52
57
49
54
45
51
42
46
38
42
35
39
32
36
30
33
28
31
25.4
28.1
23.3
25.8
21.0
23.3
19.5
21.6
18.7
20.6
17.5
19.4
16.5
18.2
15.6
17.2
14.6
16.0
14.0
15.5
13.2
14.6
12.0
13.3
11.2
12.4
10.6
11.6
9.4
10.3
8.4
9.3
7.7
8.4
7.0
7.8
6.5
7.2
5.6
6.2
5.2
5.8
4.9
5.4
V
WIB
Maximum
Capacitance
@ 0 Volts
pF
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
90
I
IB
Inverse
Blocking
Leakage
Current
μA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
V
PIB
Peak
Inverse
Blocking
Voltage
Volts
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
400
400
400
400
400
400
400
400
400
400
400
400
WWW .
Microsemi
.C
OM
Working
Inverse
Blocking
Voltage
Volts
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
SMCGLCE/SMCJLCE, e3
NOTE 1: TVS are normally selected according to the reverse “Stand Off Voltage” (V
WM
) which should be equal to or greater than the dc or continuous
peak operating voltage level.
Copyright
©
2009
2-11-2009 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
SCOTTSDALE DIVISION
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
GRAPHS
WWW .
Microsemi
.C
OM
P
PP
– Peak Pulse Power – kW
Test wave form
parameterxs
tr
= 10
μs
tp
= 1000
μs
tp – Pulse Time – sec
FIGURE 2
PULSE WAVEFORM
FIGURE 1
PEAK PULSE POWER vs. PULSE TIME
Peak Pulse Power (P
PP
) or Current (I
PP
)
o
in percent of 25 C rating
T – Temperature –
o
C
FIGURE 3
DERATING CURVE
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage V
C
. The Microsemi recommended rectifier part number for the application in Figure 5 is the “SMBJLCR80” or
“SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional
applications, this added protective feature for both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The
unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
SMCGLCE/SMCJLCE, e3
FIGURE 4
TVS with internal low
capacitance rectifier diode
FIGURE 5
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
FIGURE 6
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
Page 3
Copyright
©
2009
2-11-2009 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
SCOTTSDALE DIVISION
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
WWW .
Microsemi
.C
OM
PACKAGE DIMENSIONS
MIN
MAX
MIN
MAX
A
.115
.121
2.92
3.07
DIMENSIONS IN INCHES
B
C
D
E
F
.260
.220
.305
.077
.380
.280
.245
.320
.104
.400
DIMENSIONS IN MILLIMETERS
6.60
5.59
7.75
1.95
9.65
7.11
6.22
8.13
2.65 10.16
K
.025
.040
0.635
1.016
L
.30
.060
0.760
1.520
DO-214AB
(SMCJ)
DO-215AB
(SMCG)
PAD LAYOUT
SMCJ
A
B
C
INCHES
.390
.110
.150
SMCG
A
B
C
INCHES
0.510
0.110
0.150
mm
12.95
2.79
3.81
mm
9.90
2.79
3.81
SMCGLCE/SMCJLCE, e3
Copyright
©
2009
2-11-2009 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
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