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MXP6KE27Ae3

ESD Suppressors / TVS Diodes Transient Voltage Suppressor

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Microsemi
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
最大击穿电压
28.4 V
最小击穿电压
25.7 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值反向功率耗散
600 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
5 W
认证状态
Not Qualified
最大重复峰值反向电压
23.1 V
表面贴装
NO
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
MP6KE6.8A – MP6KE200CA (e3)
Screening in
reference to
MIL-PRF-19500
available
Available
600 Watt Transient Voltage Suppressor
DESCRIPTION
This screened MP6KE6.8A – MP6KE200CA series provides a variety of enhanced reliability
choices. Uni- and bi- directional options, as well RoHS compliant versions, are available. These
devices have the ability to clamp dangerous high voltage transients such as secondary effects of
lightning strikes, providing circuit protection to several class levels in the IEC61000-4-5
specification. Clamping time is virtually instantaneous. It also provides protection from transients
caused by inductive load dumps, RFI, and ESD, providing protection to IEC61000-4-2 and -4-4.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Available in both unidirectional and bidirectional configurations
3σ lot norm screening performed on standby current I
D
100% surge tested devices
Optional 100%
screening for avionics grade
is available
Various screenings in reference to MIL-PRF-19500 are available. Refer to
Hirel Non-Hermetic
Product Portfolio
for more details on the screening options.
(See
part nomenclature
for all options.)
High reliability controlled devices have wafer fabrication and assembly lot traceability
Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant versions are available
T-18 Package
Also available in:
DO-214AA package
(J-bend surface mount)
MSMBJ5.0A thru
MSMBJ170CA
DO-215AA package
(Gull-wing surface mount)
MSMBG5.0A thru
MSMBG170CA
APPLICATIONS / BENEFITS
Selections from 6.8 to 200 volts breakdown (V
BR
)
Economical TVS series for thru-hole mounting
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc
Protection from switching transients & induced RFI
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1: MP6KE6.8A to MP6KE130A or CA
Class 2: MP6KE6.8A to MP6KE68A or CA
Class 3: MP6KE6.8A to MP6KE36A or CA
Class 4: MP6KE6.8A to MP6KE18A or CA
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1: MP6KE6.8A to MP6KE43A or CA
Class 2: MP6KE6.8A to MP6KE22A or CA
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
2
RF01007, Rev. B (9/17/13)
©2013 Microsemi Corporation
Page 1 of 6
MP6KE6.8A – MP6KE200CA (e3)
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm)
lead length from body
(1)
Thermal Resistance, Junction to Ambient
(2)
Peak Pulse Power Dissipation
10/1000µs
Steady-State Power Dissipation @ T
L
= 25 ºC 3/8 inch (10
mm) from body
T
clamping
(0 volts to V
(BR)
min, theoretical)
Forward Voltage
Solder Temperature @ 10 s
(3)
Symbol
T
J
and
T
STG
R
ӨJL
R
ӨJA
P
PP
P
D
Value
-65 to +150
25
85
600
5
(1)
1.47
< 100
<5
3.5
260
Unit
o
C
o
C/W
C/W
W
W
ps
ns
V
o
C
o
Unidirectional
Bidirectional
V
F
Notes:
1. When mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and track width 1 mm, length 25 mm.
2. With impulse repetition rate (duty factor) of 0.01 % or less (also
Figure 1 and 4).
3. At 100 amp peak impulse of 8.3 ms half-sine wave (unidirectional only).
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable per MIL-STD-750, method 2026.
MARKING: Part number
POLARITY: Cathode indicated by band. Bidirectional not marked.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.7 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M
MA
MX
MXL
(*see
Hirel Non-Hermetic
Product Portfolio)
Point 6 kilowatt
Encapsulated Plastic
Package
P6K
E
6.8
C
A
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
5% Voltage Tolerance
Polarity
C = Bi-directional
Blank = Unidirectional
Working Standoff Voltage
Rating
RF01007, Rev. B (9/17/13)
©2013 Microsemi Corporation
Page 2 of 6
MP6KE6.8A – MP6KE200CA (e3)
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR)
.
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
Symbol
α
V(BR)
I
(BR)
I
D
I
PP
P
PP
V
(BR)
V
C
V
WM
ELECTRICAL CHARACTERISTICS
@ 25 ºC
BREAKDOWN VOLTAGE
PART
NUMBER
V
(BR)
@
V
MIN
V
NOM
MP6KE6.8A
6.45
6.8
MP6KE7.5A
7.13
7.5
MP6KE8.2A
7.79
8.2
MP6KE9.1A
8.65
9.1
MP6KE10A
9.5
10
MP6KE11A
10.5
11
MP6KE12A
11.4
12
MP6KE13A
12.4
13
MP6KE15A
14.3
15
MP6KE16A
15.2
16
MP6KE18A
17.1
18
MP6KE20A
19
20
MP6KE22A
20.9
22
MP6KE24A
22.8
24
MP6KE27A
25.7
27
MP6KE30A
28.5
30
MP6KE33A
31.4
33
MP6KE36A
34.2
36
MP6KE39A
37.1
39
MP6KE43A
40.9
43
MP6KE47A
44.7
47
MP6KE51A
48.5
51
MP6KE56A
53.2
56
MP6KE62A
58.9
62
MP6KE68A
64.6
68
MP6KE75A
71.3
75
MP6KE82A
77.9
82
MP6KE91A
86.5
91
MP6KE100A
95
100
MP6KE110A
105
110
MP6KE120A
114
120
MP6KE130A
124
130
MP6KE150A
143
150
MP6KE160A
152
160
MP6KE170A
161
170
MP6KE180A
171
180
MP6KE200A
190
200
Consult factory for higher voltages.
NOTE 1:
V
MAX
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
I
(BR)
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
RATED
STANDOFF
VOLTAGE
V
WM
V
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
85.5
94
102
111
128
136
145
154
171
MAX
STANDBY
CURRENT
I
D
@ V
WM
µA
1000
500
200
50
10
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAX
CLAMPING
VOLTAGE
V
C
@ I
PP
V
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
137
152
165
179
207
219
234
246
274
PEAK
PULSE
CURRENT
(see
Fig. 2)
I
PP
A
57
53
50
45
41
38
36
33
28
27
24
22
20
18
16
14.4
13.2
12
11.2
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
3.4
3.6
3.3
2.9
2.7
2.6
2.4
2.2
TEMPERATURE
COEFFICIANT
of V
(BR)
α
V(BR)
%/ C
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
o
For bidirectional construction, capacitance will be one-half that shown in
Figure 4.
RF01007, Rev. B (9/17/13)
©2013 Microsemi Corporation
Page 3 of 6
MP6KE6.8A – MP6KE200CA (e3)
GRAPHS
P
PP
- Peak Pulse Power - kW
t
w
– Pulse Width µs
FIGURE 1
Peak Pulse Power vs Pulse Time
Pulse Current in Percent of I
PP
t – Time – ms
Test waveform parameters: tr=10 µs, tp=1000 µs
FIGURE 2
Pulse Waveform for 10/1000 µs Exponential Surge
RF01007, Rev. B (9/17/13)
©2013 Microsemi Corporation
Page 4 of 6
MP6KE6.8A – MP6KE200CA (e3)
GRAPHS
(continued)
Peak Pulse Power (P
PP
) or Continuous
Power in Percent of 25°C Rating
T
L
Lead Temperature °C
FIGURE 3
Derating Curve
C – Capacitance - Picofarads
V
(BR)
- Breakdown Voltage - Volts
FIGURE 4
Typical Capacitance vs. Breakdown Voltage
RF01007, Rev. B (9/17/13)
©2013 Microsemi Corporation
Page 5 of 6
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