NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02M083WL1A
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx8 bit
Overview
The N02M083WL1A is an integrated memory
device intended for non life-support (Class 1 or 2)
medical applications. This device comprises a 2
Mbit Static Random Access Memory organized as
262,144 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
medical users. The base design is the same as
NanoAmp’s N02M0818L2A, which has further
reliability processing for life-support (Class 3)
medical applications. The device operates with two
chip enable (CE1 and CE2) controls and output
enable (OE) to allow for easy memory expansion.
The N02M083WL1A is optimal for various
applications where low-power is critical such as
battery backup and hand-held devices. The device
can operate over a very wide temperature range of
-40
o
C to +85
o
C and is available in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Low standby current
3µA maximum at 3.6V
• Very low operating current
2 mA at 3.6V and 1Mhz (Typical)
• Very low Page Mode operating current
0.5mA at 3.6V and 1Mhz (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Automatic power down to standby mode
• TTL compatible three-state output driver
Product Family
Standby
Current
(I
SB
), Max
3.0 µA
Operating
Current (Icc),
Max
2.5 mA @ 1MHz
Part Number
N02M083WL1AN
Package Type
32 - STSOP I
Operating
Temperature
-40
o
C to +85
o
C
Power
Supply (Vcc)
2.3V - 3.6V
Speed
N02M083WL1AD Known Good Die
70ns @ 2.3V
Pin Configuration
A11
A9
A8
A13
WE
CE2
A15
V
CC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
V
SS
I/O2
I/O1
I/O0
A0
A1
A2
A3
Pin Descriptions
Pin Name
A
0
-A
17
WE
CE1, CE2
OE
I/O
0
-I/O
7
V
CC
V
SS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
N02M083WL1A
STSOP
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NanoAmp Solutions, Inc.
Functional Block Diagram
N02M083WL1A
Address
Inputs
A
0
- A
3
Word
Address
Decode
Logic
Word Mux
Input/
Output
Mux
and
Buffers
Address
Inputs
A
4
- A
17
Page
Address
Decode
Logic
16K Page
x 16 word
x 8 bit
RAM Array
I/O
0
- I/O
7
CE1
CE2
WE
OE
Control
Logic
Functional Description
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
L
H
H
OE
X
X
X
2
L
H
I/O
0
- I/O
7
High Z
High Z
Data In
Data Out
High Z
MODE
Standby
1
Standby
1
Write
2
Read
Active
POWER
Standby
Standby
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
Min
Max
8
8
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc.
Absolute Maximum Ratings
1
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V
IN,OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
N02M083WL1A
Rating
–0.3 to V
CC
+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
240
o
C, 10sec(Lead only)
Unit
V
V
mW
o
C
o
C
o
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1
µs
Cycle Time
2
Read/Write Operating Supply Current
@ 70 ns Cycle Time
2
Page Mode Operating Supply Current
@ 70 ns Cycle Time
2
(Refer to Power
Savings with Page Mode Operation
diagram)
Maximum Standby Current
3
Symbol
V
CC
V
DR
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
OH
= 0.2mA
I
OL
= -0.2mA
V
IN
= 0 to V
CC
OE = V
IH
or Chip Disabled
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=2.3 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, V
CC
= 2.3 V
V
CC
= 1.8V, V
IN
= V
CC
or 0
Chip Disabled, t
A
= 85
o
C
1.5
10.0
Chip Disabled
3
Test Conditions
Min.
2.3
1.8
V
CC
-0.6
–0.3
V
CC
–0.2
0.2
0.5
0.5
2.0
12.0
V
CC
+0.3
0.6
Typ
1
Max
3.6
Unit
V
V
V
V
V
V
µA
µA
mA
mA
I
CC3
4.0
mA
I
SB1
2.0
20.0
µA
Maximum Data Retention Current
3
I
DR
10.0
µA
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
NanoAmp Solutions, Inc.
Power Savings with Page Mode Operation (WE = V
IH
)
N02M083WL1A
Page Address (A4 - A17)
Open page
...
Word Address (A0 - A3)
Word 1
Word 2
Word 16
CE1
CE2
OE
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
N02M083WL1A
0.1V
CC
to 0.9 V
CC
5ns
0.5 V
CC
CL = 30pF
-40 to +85
o
C
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OW
50
0
10
15
10
0
0
15
100
70
70
50
0
0
30
40
0
5
30
30
2.3 - 3.6 V
Min.
100
100
100
35
10
5
0
0
10
70
50
50
40
0
0
20
20
20
Max.
2.7 - 3.6 V
Min.
70
70
70
35
Max.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
