WESTCODE
Absolute maximum ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage, (note 1).
Non-repetitive peak reverse voltage, (note 1).
Date : Dec-99
Rat Rep : 99T01
Issue 2
Converter thyristor
Type N1063xx53xxx to N1063xx65xxx
MAXIMUM
LIMITS
5300-6500
5300-6500
5300-6500
5400-6600
UNITS
V
V
V
V
RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
It
I
2
t
I
2
t
di/dt
I
FGM
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
2
MAXIMUM
LIMITS
2010
1400
870
3930
3500
25.2x10
28x10
3
6
6
6
3
UNITS
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A/µs
A/µs
A
V
W
W
V
°C
°C
Mean on-state current, Tsink=55°C, (note 2).
Mean on-state current. Tsink=85°C, (note 5).
Mean on-state current. Tsink=85°C, (note 3).
Nominal RMS on-state current, 25°C, (note 2).
D.C. on-state current, 25°C, (note 7).
Peak non-repetitive surge tp=10ms, V
RM
=0.6V
RRM
, (note 4).
Peak non-repetitive surge tp=10ms, V
RM
≤10V,
(note 4).
I t capacity for fusing tp=10ms, V
RM
=0.4V
RRM
, (note 4).
I
2
t capacity for fusing tp=10ms, V
RM
≤10V,
(note 4).
I
2
t capacity for fusing tp=3ms, V
RM
≤0.4V
RRM
, (note 4).
Critical rate of rise of on-state current (continuous), (note 6).
Critical rate of rise of on-state current (intermittent), (note 6).
Peak forward gate current.
Peak reverse gate voltage.
Mean forward gate power.
Peak forward gate power.
Non-trigger gate voltage, (Note 5).
Operating temperature range.
Storage temperature range.
2
3.2x10
3.9x10
2.6x10
150
300
10
5
5
30
0.25
-40 to +115
-40 to +150
Notes:-
1) De-rating factor of 0.13% per K is applicable for T
j
below 25°C.
2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.
3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, 115°C T
j
initial.
5) Rated V
DRM.
6) V
D
=67%V
DRM
, I
T
=4000A, I
FG
=2A, t
r
=500ns.
7) Doubleside cooled.
Types N1063xx53xxx to N1063xx65xxx Rat. Rep. 99T01
page 1 of 8
December, 1999
WESTCODE
Positive development in power electronics
Characteristics
CHARACTERISTICS
V
TM
V
0
R
T
Maximum peak on-state voltage.
Threshold voltage.
N1063xx53xxx to N1063xx65xxx
MIN
-
-
-
200
-
-
-
-
-
-
-
63
-
TYP
-
-
-
1000
-
-
-
-
-
-
-
-
1.23
MAX TEST CONDITIONS
2.00
1.20
0.385
2000
200
200
2.0
300
1000
11
22
77
-
V
D
=80% V
DRM
.
Rated V
DRM
, note 2.
Rated V
RRM
, note 2.
T
j
=25°C.
T
j
=25°C.
I
A
=3A
T
j
=25°C.
V
D
=10V,
I
T
=2000A.
UNITS
V
V
mΩ
V/µs
mA
mA
V
mA
mA
K/KW
K/KW
kN
kg
Slope resistance.
Critical rate of rise of off-state
dv/dt
voltage.
I
DRM
Peak off-state current.
I
RRM
V
GT
I
GT
I
H
R
θ
F
W
t
Peak reverse current.
Gate trigger voltage
Gate trigger current
Holding current
Thermal resistance junction to
sink.
Mounting force.
Weight.
Double side cooled.
Single side cooled.
Notes:-
1) Unless otherwise indicated T
j
=115
°
C.
2) Leakage current limit, this will be increased in the future to 600mA
Types N1063xx53xxx to N1063xx65xxx Rat. Rep. 99T01
page 2 of 8
December, 1999
WESTCODE
Positive development in power electronics
Notes on Ratings and Characteristics
1 Voltage Grade Table
Voltage Grade 'H'
53
55
57
59
61
63
65
V
DSM
V
DRM
V
RRM
V
5300
5500
5700
5900
6100
6300
6500
V
RSM
V
5400
5600
5800
6000
6200
6400
6600
N1063xx53xxx to N1063xx65xxx
V
D
V
R
V
DC
.
2650
2750
2850
2950
3050
3150
3250
2 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T
J
below 25
°C.
4 Repetitive dv/dt
Higher dv/dt selections are available up to 2000V/
µ
s on request.
5 Computer modelling parameters
5.1 Device dissipation calculations
I
AV
−
V
o
+
V
o
+
4
⋅
ff
2
⋅
r
s
⋅
W
AV
=
2
⋅
ff
2
⋅
r
s
2
Where
V
o
= 1.20 V,
r
s
= 0.385mΩ
W
AV
=
∆
T
R
th
∆
T
=
T
jMax
−
T
Hs
R
th
ff
= Supplementary thermal impedance, see table below.
= Form factor, see table below.
Supplementary Thermal Impedance (at 50Hz operating frequency)
Conduction Angle
6 phase (60°)
3 phase (120°)
Half wave (180°)
Square wave Double Side Cooled
0.0118
0.0115
0.0112
Square wave Single Side Cooled
0.0236
0.0230
0.0224
Sine wave Double Side Cooled
0.0116
0.0112
0.0101
Sine wave Single Side Cooled
0.0232
0.0224
0.0202
Form Factors
o
120
1.73
1.88
d.c.
0.0110
0.0220
Conduction Angle
Square wave
Sine wave
60
2.45
2.78
o
180
1.41
1.57
o
d.c.
1
Types N1063xx53xxx to N1063xx65xxx Rat. Rep. 99T01
page 3 of 8
December, 1999
WESTCODE
Positive development in power electronics
5.2 Calculating V
T
using ABCD coefficients
N1063xx53xxx to N1063xx65xxx
The on-state characteristic I
T
vs V
T
, on Fig. 9, is represented in two ways; (i) the well
established V
0
and r
S
tangent and (ii) a set of constants A, B, C, D, forming the coefficients of
the representative equation for V
T
in terms of I
T
given below:
V
T
=
A
+
B
. ln(
I
T
)
+
C
.
I
T
+
D
.
I
T
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics where possible. The resulting values for V
T
agree with the true device
characteristic over a current range, which is limited to that plotted.
125°C Coefficients
A
B
C
D
5.54×10
-01
1.21×10
-01
3.71×10
-04
-4.68×10
-03
A
B
C
D
25°C Coefficients
1.40×10
-00
-8.06×10
-13
2.50×10
-04
9.12×10
-14
5.3 D.C. Thermal impedance calculation
−
t
1
−
e
τ
p
r
t
=
∑
r
p
p
=
1
p
=
n
Where
p
= 1 to n, n is the number of terms in the series.
t =
Duration of heating pulse in seconds.
rt
= Thermal resistance at time
t.
r
p
= Amplitude of
pth
term.
τ
p
= Time Constant of
rth
term.
Term
rp
τ
p
D.C. Double Side Cooled
1
2
3
-03
-03
1.901×10
2.560×10
-03
5.214×10
9.882×10
-01
3.481×10
-01
1.147×10
-01
4
8.720×10
-04
8.180×10
-03
Term
rp
τ
p
1
N/A
N/A
D.C. Single Side Cooled
2
3
N/A
N/A
N/A
N/A
4
N/A
N/A
5
N/A
N/A
Types N1063xx53xxx to N1063xx65xxx Rat. Rep. 99T01
page 4 of 8
December, 1999
WESTCODE
Positive development in power electronics
Curves
Figure 1, Maximum on-state characteristic
10000
N1063xx53xxx to N1063xx65xxx
Figure 2, Transient thermal impedance
100
Tj=25°C
Single side cooled
Transient Thermal Impedance, Z(th)t (K/kW).
10
Double side cooled
Tj=115°C
On state current, I
T
, (A)
1000
1
0.1
N1063Cx53-65
99T01-Issue 2
N1063Cx53-65
99T01-issue 2
100
1
2
3
On state volt drop, V
T
, (V)
4
0.01
0.0001
0.001
0.01
0.1
1
Pulse width, tp (seconds).
10
100
Figure 3, Maximum non repetitive surge
100000
I t:V
RRM
=10V
2
Figure 4, Gate characteristics, 25°C
10
Max Peak Vg (rise time of Ig = 1µs)
Peak half sine surge current, I
FSM
(A) / [Maximum I
2
t (kA
2
s)].
Pg Max 30W
Pg d.c. 4W
I t:40%V
RRM
2
Igt,Vgt
Max Vg d.c.
125
o
C
-40
o
C
25
o
C
I
TSM
:V
RRM
=10V
10000
Gate voltage,V
G,
(Volts).
1
I
TSM
:40%V
RRM
Min Vg d.c.
Igd,Vgd
T
j(initial)
=115°C
Gate MayTemporarily Lose Control
1000
1.00E-03
N1063Cx53-65
99T01-Issue 2
1.00E+00
N1063Cx53-65
99T01-Issue 2
0.1
0.01
0.1
1
Gate current, I
G,
(Amperes).
10
1
1.00E-02
10
1
1.00E-01
5
10
50
1.00E+01
Duration of
surge (ms)
Duration of surge (Cycles @ 50 Hz)
Types N1063xx53xxx to N1063xx65xxx Rat. Rep. 99T01
page 5 of 8
December, 1999
