Provisional Data
Absolute maximum ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
MAXIMUM
LIMITS
4300-5200
4300-5200
4400-5300
4300-5200
Phase Control Thyristor
Types N1283CH43 to N1283CH52
Repetitive peak off-state voltage (note 1)
Repetitive peak reverse voltage (note 1)
Non-repetitive peak off-state voltage (note 1)
Non-repetitive peak reverse voltage (note 1)
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
It
It
di/dt
I
FGM
2
2
Mean on-state current, T
sink
=55°C (note 2)
Mean on-state current. T
sink
=85°C (note 2)
Mean on-state current. T
sink
=85°C (note 3)
D.C. on-state current, T
sink
=25°C (note 4)
page 1 of 9
RATINGS
Nominal RMS on-state current, T
sink
=25°C (note 2)
Peak non-repetitive surge t
p
=10ms, V
RM
=0.6V
RRM
(note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V
(note 5)
I t capacity for fusing t
p
=10ms, V
RM
=0.4V
RRM
(note 5)
I t capacity for fusing t
p
=10ms, V
RM
≤10V
(note 5)
2
2
Critical rate of rise of on-state current, repetitive (note 6)
Peak forward gate current
Mean forward gate power
Peak forward gate power
Critical rate of rise of on-state current, non-repetitive (note 6)
Peak reverse gate voltage
V
RGM
P
GM
V
GD
T
HS
T
stg
P
G(AV)
Non-trigger gate voltage (Note 7)
Operating temperature range
Storage temperature range
Types N1283CH43-52 Provisional Data Sheet 99T03AD Issue 3
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
j
initial.
6) V
D
=67%V
DRM
, I
T
=5000A, I
FG
=2A, t
r
=500ns.
7) Rated V
DRM.
UNITS
V
V
V
V
WESTCODE
Date: November, 2000
Data Sheet: 99T03
Issue: 3
MAXIMUM
LIMITS
3764
2658
1680
7317
6620
49.5
55
12.25x10
15.13x10
150
300
10
5
5
30
0.25
-40 to +125
-40 to +150
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
A/µs
A/µs
A
V
W
W
V
°C
°C
2
2
November, 2000
WESTCODE
Positive development in power electronics
Characteristics
N1283CH43 to N1283CH52
V
TM
V
0
r
s
dv/dt
I
DRM
I
RRM
V
GT
I
GT
I
H
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
-
-
-
200
-
-
-
-
-
1000
-
-
2.00
1.0
0.2
2000
300
300
3.0
Rated V
RRM
T
j
=25°C
-
-
-
-
300
T
j
=25°C
-
-
1000
T
j
=25°C
-
-
0.0065 DC, Double side cooled
0.013
98
-
DC, Single side cooled
-
-
81
-
-
2.80
page 2 of 9
Rth(j-hs) Thermal resistance, junction to sink
F
W
t
Mounting force
Weight
Types N1283CH43-52 Provisional Rating Report 99T03AD Issue 3
November, 2000
Notes:-
1) Unless otherwise indicated T
j
=125°C.
I
T
=5000A
V
V
mΩ
V
D
=80% V
DRM
Rated V
DRM
mA
mA
V
mA
mA
V
D
=10V, I
A
=3A
kN
kg
PARAMETER
MIN
TYP
MAX TEST CONDITIONS
UNITS
V/µs
K/W
WESTCODE
Positive development in power electronics
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
44
46
48
50
52
V
DSM
V
DRM
V
RRM
V
4400
4600
4800
5000
5200
V
RSM
V
4500
4700
4900
5100
5300
N1283CH43 to N1283CH52
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T
j
below 25°C.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 2000V/
µ
s on request.
5.0 Computer Modelling Parameters
5.1 Device dissipation calculations
2
I
AV
−
V
o
+
V
o
+
4
⋅
ff
2
⋅
r
s
⋅
W
AV
=
2
⋅
ff
2
⋅
r
s
Where
V
0
= 1.0V,
r
s
= 0.2mΩ
W
AV
=
R
th
ff
= Form factor, see table below.
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
Types N1283CH43-52 Provisional Rating Report 99T03AD Issue 3
∆
T
R
th
∆
T
=
T
jMax
−
T
Hs
= Supplementary thermal impedance, see table below.
Supplementary Thermal Impedance (at 50Hz operating frequency)
30°
60°
90°
120°
180°
Conduction Angle
Square wave Double Side Cooled 0.00717 0.00707 0.00698 0.00689 0.00673
Square wave Single Side Cooled
0.0137
0.01359 0.01349
0.0134
0.01323
Sine wave Double Side Cooled
0.00709 0.00697 0.00687 0.00678 0.00654
Sine wave Single Side Cooled
0.0136
0.01348 0.01337 0.01328 0.01303
270°
0.00652
0.01301
d.c.
0.0065
0.013
Form Factors
60°
90°
120°
2.449
2
1.732
2.778
2.22
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
page 3 of 9
November, 2000
V
D
V
R
(dc)
V
2200
2300
2400
2500
2600
WESTCODE
Positive development in power electronics
5.2 Calculating V
T
using ABCD coefficients
N1283CH43 to N1283CH52
V
T
=
A
+
B
. ln(
I
T
)
+
C
.
I
T
+
D
.
I
T
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics where possible. The resulting values for V
T
agree with the true device characteristic over a
current range, which is limited to that plotted.
125°C Coefficients
A
B
C
D
25°C Coefficients
0.545447122
0.06095875
-4
1.872716×10
-5
-1.417852×10
Term
rp
τ
p
1.125391
Term
rp
τ
p
8.929845
Types N1283CH43-52 Provisional Rating Report 99T03AD Issue 3
Where
p
= 1 to n, n is the number of terms in the series.
where:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
−
t
1
−
e
τ
p
r
t
=
∑
r
p
p
=
1
p
=
n
5.3 D.C. Thermal impedance calculation
D.C. Double Side Cooled
1
2
3
-3
-3
-4
3.424745×10
1.745273×10
8.532017×10
0.1878348
0.02788979
A
B
C
D
D.C. Single Side Cooled
1
2
3
-3
-3
-3
8.375269×10
2.518437×10
1.193758×10
0.4711304
0.08221244
page 4 of 9
0.8560119
0.06109782
-4
1.922791×10
-3
-4.777063×10
The on-state characteristic I
T
vs. V
T
, on Fig. 9, is represented in two ways;
(i)
the well established V
0
and r
S
tangent and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in
terms of I
T
given below:
4
-4
3.457329×10
8.430889×10
-3
4
-4
7.45432×10
0.01221961
November, 2000
WESTCODE
Positive development in power electronics
Curves
N1283CH43 to N1283CH52
10000
0.1
N1283CH43-52
99T03AD Issue 3
0.01
T
j
= 125°C
T
j
= 25°C
1000
100
0
1
N1283CH43-52
99T03AD Issue 3
3
2
4
0.000001
20
18
T
j
=25°C
0.001
0.0001
0.00001
1E-05 0.0001
0.001
0.01
0.1
1
Time (s)
Instantaneous On-state current - I
TM
(A)
Transient thermal impedance (K/W)
Instantaneous On-state voltage - V
TM
(V)
Figure 3 – Gate characteristics
6
N1283CH43-52
99T03AD Issue 3
T
j
=25°C
Figure 4 – Gate characteristics
N1283CH43-52
99T03AD Issue 3
5
16
Max V
G
dc
14
4
Gate Voltage - V
G
(V)
Gate Voltage - V
G
(V)
12
I
GT
, V
GT
3
10
8
P
G
Max 30W dc
125°C
25°C
-10°C
-40°C
2
6
1
Min V
G
dc
4
I
GD
, V
GD
2
0
0
1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
Gate Current - I
G
(A)
Types N1283CH43-52 Provisional Rating Report 99T03AD Issue 3
page 5 of 9
SSC
0.013K/W
DSC
0.0065K/W
10
100
Max V
G
dc
P
G
5W dc
Min V
G
dc
Figure 1 – Maximum on-state characteristic
Figure 2 – Transient thermal impedance
Gate Current - I
G
(A)
November, 2000
