WESTCODE
Absolute maximum ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage, (note 1).
Non-repetitive peak reverse voltage, (note 1).
Date : Dec-99
Rat Rep : 99T11
Issue 2
Converter Thyristor
Type N1463xx36xxx to N1463xx42xxx
MAXIMUM
LIMITS
3600-4200
3600-4200
3600-4200
3700-4300
UNITS
V
V
V
V
RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
It
I
2
t
I
2
t
di/dt
I
FGM
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
2
MAXIMUM
LIMITS
2850
1960
1200
5590
4900
46.8×10
52.0×10
13.5×10
8.2×10
150
300
10
5
5
30
0.25
-40 to +125
-40 to +150
3
3
6
6
UNITS
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A/µs
A/µs
A
V
W
W
V
°C
°C
Mean on-state current, Tsink=55°C, (note 2).
Mean on-state current. Tsink=85°C, (note 5).
Mean on-state current. Tsink=85°C, (note 3).
Nominal RMS on-state current, 25°C, (note 2).
D.C. on-state current, 25°C, (note 7).
Peak non-repetitive surge tp=10ms, V
RM
=0.6V
RRM
, (note 4).
Peak non-repetitive surge tp=10ms, V
RM
≤10V,
(note 4).
I t capacity for fusing tp=10ms, V
RM
=0.6V
RRM
, (note 4).
I
2
t capacity for fusing tp=10ms, V
RM
≤10V,
(note 4).
I
2
t capacity for fusing tp=3ms, V
RM
≤0.6V
RRM
, (note 4).
Critical rate of rise of on-state current (continuous), (note 6).
Critical rate of rise of on-state current (intermittent), (note 6).
Peak forward gate current.
Peak reverse gate voltage.
Mean forward gate power.
Peak forward gate power.
Non-trigger gate voltage, (Note 5).
Operating temperature range.
Storage temperature range.
2
11.0×10
6
Notes:-
1) De-rating factor of 0.13% per K is applicable for T
j
below 25°C.
2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.
3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, 125°C T
j
initial.
5) Rated V
DRM.
6) V
D
=67%V
DRM
, I
T
=5500A, I
FG
=2A, t
r
=500ns.
7) Doubleside cooled.
Types N1463xx36xxx to N1463xx42xxx Rat. Rep. 99T11
page 1 of 8
December, 1999
WESTCODE
Positive development in power electronics
Characteristics
CHARACTERISTICS
V
TM
V
0
R
T
Maximum peak on-state voltage.
Threshold voltage.
N1463xx36xxx to N1463xx42xxx
MIN
-
-
-
200
-
-
-
-
-
-
-
63
-
TYP
-
-
-
1000
-
-
-
-
-
-
-
-
1.23
MAX TEST CONDITIONS
1.87
0.97
0.18
2000
250
250
3.0
300
1000
11
22
77
-
V
D
=80% V
DRM
.
Rated V
DRM
, (note 2).
Rated V
RRM
, (note 2).
T
j
=25°C.
T
j
=25°C.
I
A
=3A
T
j
=25°C.
V
D
=10V,
I
T
=5000A.
UNITS
V
V
mΩ
V/µs
mA
mA
V
mA
mA
K/KW
K/KW
kN
kg
Slope resistance.
Critical rate of rise of off-state
dv/dt
voltage.
I
DRM
Peak off-state current.
I
RRM
V
GT
I
GT
I
H
R
θ
F
W
t
Peak reverse current.
Gate trigger voltage
Gate trigger current
Holding current
Thermal resistance junction to
sink.
Mounting force.
Weight.
Double side cooled.
Single side cooled.
Notes:-
1) Unless otherwise indicated T
j
=125°C.
2) Leakage current limit, this will be increased in the future to 400mA
Types N1463xx36xxx to N1463xx42xxx Rating Report 99T11
page 2 of 8
December, 1999
WESTCODE
Positive development in power electronics
Notes on Ratings and Characteristics
1 Voltage Grade Table
Voltage Grade 'H'
36
37
38
39
40
41
42
V
DSM
V
DRM
V
RRM
V
3600
3700
3800
3900
4000
4100
4200
V
RSM
V
3700
3800
3900
4000
4100
4200
4300
N1463xx36xxx to N1463xx42xxx
V
D
V
R
V
DC
.
2160
2220
2280
2340
2400
2460
2520
2 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T
J
below 25
°C.
4 Repetitive dv/dt
Higher dv/dt selections are available up to 2000V/
µ
s on request.
5 Computer modelling parameters
5.1 Device dissipation calculations
I
AV
−
V
o
+
V
o
+
4
⋅
ff
2
⋅
r
s
⋅
W
AV
=
2
⋅
ff
2
⋅
r
s
2
Where
V
o
= 0.97 V,
r
s
= 0.180mΩ
W
AV
=
∆
T
R
th
∆
T
=
T
jMax
−
T
Hs
R
th
ff
= Supplementary thermal impedance, see table below.
= Form factor, see table below.
Supplementary Thermal Impedance (at 50Hz operating frequency)
Conduction Angle
6 phase (60°)
3 phase (120°)
Half wave (180°)
Square wave Double Side Cooled
0.0118
0.0115
0.0112
Square wave Single Side Cooled
0.0236
0.0230
0.0224
Sine wave Double Side Cooled
0.0116
0.0112
0.0101
Sine wave Single Side Cooled
0.0232
0.0224
0.0202
Form Factors
o
120
1.73
1.88
d.c.
0.0110
0.0220
Conduction Angle
Square wave
Sine wave
60
2.45
2.78
o
180
1.41
1.57
o
d.c.
1
Types N1463xx36xxx to N1463xx42xxx Rating Report 99T11
page 3 of 8
December, 1999
WESTCODE
Positive development in power electronics
5.2 Calculating V
T
using ABCD coefficients
N1463xx36xxx to N1463xx42xxx
The on-state characteristic I
T
vs V
T
, on Fig. 9, is represented in two ways; (i) the well
established V
0
and r
S
tangent and (ii) a set of constants A, B, C, D, forming the coefficients of
the representative equation for V
T
in terms of I
T
given below:
V
T
=
A
+
B
. ln(
I
T
)
+
C
.
I
T
+
D
.
I
T
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics where possible. The resulting values for V
T
agree with the true device
characteristic over a current range, which is limited to that plotted.
125°C Coefficients
A
B
C
D
9.70×10
-01
1.06×10
-03
1.80×10
-04
-1.01×10
-14
A
B
C
D
25°C Coefficients
1.10×10
00
1.21×10
-02
1.44×10
-04
-1.21×10
-03
5.3 D.C. Thermal impedance calculation
−
t
1
−
e
τ
p
r
t
=
∑
r
p
p
=
1
p
=
n
Where
p
= 1 to n, n is the number of terms in the series.
t =
Duration of heating pulse in seconds.
rt
= Thermal resistance at time
t.
r
p
= Amplitude of
pth
term.
τ
p
= Time Constant of
rth
term.
Term
rp
τ
p
D.C. Double Side Cooled
1
2
3
-03
-03
1.901×10
2.560×10
-03
5.214×10
9.882×10
-01
3.481×10
-01
1.147×10
-01
4
8.720×10
-04
8.180×10
-03
Term
rp
τ
p
1
N/A
N/A
D.C. Single Side Cooled
2
3
N/A
N/A
N/A
N/A
4
N/A
N/A
5
N/A
N/A
Types N1463xx36xxx to N1463xx42xxx Rating Report 99T11
page 4 of 8
December, 1999
WESTCODE
Positive development in power electronics
Curves
Figure 1, Maximum on-state characteristic
10000
N1463xx36xxx to N1463xx42xxx
Figure 2, Transient thermal impedance
100
Single side cooled
10
Tj=125°C
On state current, IT, (Amperes)
Transient Thermal Impedance, Z(th)t (K/kW).
Double side cooled
Tj=25°C
1
1000
0.1
0.01
N1463CH36-42
99T11-Issue 2
100
1
2
On state volt drop, V
T,
(Volts)
3
N1463CH36-42
99T11AD - Issue 1
0.001
1E-05 0.0001 0.001 0.01
0.1
1
Pulse width, tp (seconds).
10
100
Figure 3, Maximum non repetitive surge
1000000
Figure 4, Gate characteristics, 25°C
10
Max Peak Vg (rise time of Ig = 1µs)
Peak half sine surge current, I
FSM
(A) / [Maximum I
2
t (kA
2
s)].
I t:V
RRM
=10V
2
Pg Max 30W
Pg d.c. 4W
Igt,Vgt
100000
I t:60%V
RRM
Gate voltage,V
G,
(Volts).
Max Vg d.c.
125
o
C
-40
o
C
25
o
C
2
1
I
TSM
:V
RRM
=10V
10000
I
TSM
:60%V
RRM
Min Vg d.c.
Igd,Vgd
T
j(initial)
=125°C
N1463CH36-42
Gate MayTemporarily Lose Control 99T11-Issue 2
1000
1.00E-03
N1463CH36-42
99T11-Issue 2
0.1
0.01
0.1
1
Gate current, I
G,
(Amperes).
10
1
1.00E-02
10
1
1.00E-01
5
10
1.00E+00
50
1.00E+01
Duration of
surge (ms)
Duration of surge (Cycles @ 50 Hz)
Types N1463xx36xxx to N1463xx42xxx Rating Report 99T11
page 5 of 8
December, 1999
