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N3839TC340

Silicon Controlled Rectifier, 7527A I(T)RMS, 3400V V(DRM), 3400V V(RRM), 1 Element

器件类别:模拟混合信号IC    触发装置   

厂商名称:IXYS

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器件参数
参数名称
属性值
厂商名称
IXYS
Reach Compliance Code
unknown
配置
SINGLE
最大直流栅极触发电流
300 mA
JESD-30 代码
O-CXDB-X4
元件数量
1
端子数量
4
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
认证状态
Not Qualified
最大均方根通态电流
7527 A
断态重复峰值电压
3400 V
重复峰值反向电压
3400 V
表面贴装
YES
端子形式
UNSPECIFIED
端子位置
UNSPECIFIED
触发设备类型
SCR
文档预览
WESTCODE
An
Date:- 22 Oct, 2003
Data Sheet Issue:- 1
IXYS
Company
Phase Control Thyristor
Types N3839TC300 to N3839TC350
Old Type No.: N1663CH30-35
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
3000-3500
3000-3500
3000-3500
3100-3600
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
It
It
(di/dt)
cr
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
2
2
MAXIMUM
LIMITS
3839
2668
1644
7527
6647
49.5
55.0
12.25×10
15.13×10
75
150
300
5
5
50
-40 to +125
-40 to +150
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
A/µs
A/µs
A/µs
V
W
W
°C
°C
2
2
Maximum average on-state current, T
sink
=55°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=60%V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
=60%V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Critical rate of rise of on-state current (continuous, 50Hz), (Note 6)
Critical rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
2
2
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
GM
=4A, t
r
≤0.5µs,
T
case
=125°C.
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1
Page 1 of 11
October, 2003
WESTCODE
An IXYS Company
Characteristics
Phase Control Thyristor Types N3839TC300 to N3839TC350
PARAMETER
V
TM
V
T0
r
T
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rr
t
rr
t
q
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Turn-off time
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
1.0
3.0
13000
7800
280
55
600
1100
-
-
-
1.23
MAX. TEST CONDITIONS
(Note 1)
1.74
2.51
0.95
0.14
-
250
250
3.0
300
0.25
1000
1.5
4.0
-
8500
-
-
-
-
0.008
0.016
77
-
I
TM
=4000A, t
p
=2000µs, di/dt=10A/µs,
V
r
=100V, V
dr
=80%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=4000A, t
p
=2000µs, di/dt=10A/µs,
V
r
=100V, V
dr
=80%V
DRM
, dV
dr
/dt=200V/µs
Double side cooled
Single side cooled
I
TM
=4000A, t
p
=2000µs, di/dt=10A/µs,
V
r
=100V
V
D
=80% V
DRM
, linear ramp, gate o/c
Rated V
DRM
Rated V
RRM
T
j
=25°C
Rated V
DRM
T
j
=25°C
V
D
=67% V
DRM
, I
T
=6000A, di/dt=10A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
V
D
=10V, I
T
=3A
I
TM
=6000A
I
TM
=11500A
UNITS
V
V
mΩ
V/µs
mA
mA
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
kN
kg
(dv/dt)
cr
Critical rate of rise of off-state voltage
R
thJK
F
W
t
Thermal resistance, junction to heatsink
Mounting force
Weight
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
-
-
63
-
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1
Page 2 of 11
October, 2003
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
30
32
34
35
V
DRM
V
DSM
V
RRM
V
3000
3200
3400
3500
Phase Control Thyristor Types N3839TC300 to N3839TC350
V
RSM
V
3100
3300
3500
3600
V
D
V
R
DC V
1800
1920
2040
2100
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance (1 min), the on-state rate of rise of current must
not exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to
the total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
8.0 Computer Modelling Parameters
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1
Page 3 of 11
October, 2003
WESTCODE
An IXYS Company
8.1 Device Dissipation Calculations
Phase Control Thyristor Types N3839TC300 to N3839TC350
I
AV
V
0
+
V
0
+
4
ff
r
s
W
AV
=
2
ff
2
r
s
2
2
W
AV
and:
T
=
R
th
T
=
T
j
max
T
Hs
Where V
0
=0.95V, r
s
=0.14mΩ,
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
30°
0.00915
0.01795
0.00911
0.01784
60°
0.00907
0.01781
0.00903
0.01775
90°
0.00898
0.01772
0.00895
0.01763
120°
0.00891
0.01759
0.00884
0.01735
180°
0.00878
0.01731
0.00867
0.01682
270°
0.00864
0.01678
d.c.
0.008
0.016
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
8.2 Calculating V
T
using ABCD Coefficients
The on-state characteristic I
T
vs. V
T
, on page 6 is represented in two ways;
(i)
the well established V
0
and r
T
tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in
terms of I
T
given below:
V
T
=
A
+
B
ln
(
I
T
)
+
C
I
T
+
D
I
T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
T
agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
A
B
C
D
1.1
-2.18×10
2.47×10
-13
-5
125°C Coefficients
A
B
C
D
0.9
1.07×10
-13
-4
9.00×10
1.40×10
-1.04×10
-14
-14
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1
Page 4 of 11
October, 2003
WESTCODE
An IXYS Company
8.3 D.C. Thermal Impedance Calculation
Phase Control Thyristor Types N3839TC300 to N3839TC350
t
τ
r
t
=
r
p
⋅ 
1
e
p
p
=
1
p
=
n
Where
p = 1
to
n, n
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled
Term
1
4.293445×10
0.8365194
-3
2
2.542182×10
0.176198
D.C. Single Side Cooled
-3
3
1.167986×10
0.02000819
-3
r
p
τ
p
Term
1
9.899658×10
5.623142
-3
2
2.731068×10
1.132481
-3
3
2.619106×10
0.1461472
-3
4
1.049687×10
0.01849926
-3
r
p
τ
p
9.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150µs integration time i.e.
150
µ
s
Q
rr
=
(iii)
i
0
rr
.
dt
t
1
K Factor
=
t
2
Data Sheet. Types N3839TC300 to N3839TC350 Issue 1
Page 5 of 11
October, 2003
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参数对比
与N3839TC340相近的元器件有:N3839TC320、N3839TC300、N3839TC350。描述及对比如下:
型号 N3839TC340 N3839TC320 N3839TC300 N3839TC350
描述 Silicon Controlled Rectifier, 7527A I(T)RMS, 3400V V(DRM), 3400V V(RRM), 1 Element Silicon Controlled Rectifier, 7527A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element Silicon Controlled Rectifier, 7527 A, 3000 V, SCR Silicon Controlled Rectifier, 7527A I(T)RMS, 3500V V(DRM), 3500V V(RRM), 1 Element,
厂商名称 IXYS IXYS IXYS IXYS
Reach Compliance Code unknown unknown unknown unknown
配置 SINGLE SINGLE SINGLE SINGLE
最大直流栅极触发电流 300 mA 300 mA 300 mA 300 mA
JESD-30 代码 O-CXDB-X4 O-CXDB-X4 O-CXDB-X4 O-CXDB-X4
元件数量 1 1 1 1
端子数量 4 4 4 4
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大均方根通态电流 7527 A 7527 A 7527 A 7527 A
断态重复峰值电压 3400 V 3200 V 3000 V 3500 V
重复峰值反向电压 3400 V 3200 V 3000 V 3500 V
表面贴装 YES YES YES YES
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
触发设备类型 SCR SCR SCR SCR
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