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N74F241D

Buffers & Line Drivers OCTAL BUFFER 3-STATE

器件类别:逻辑    逻辑   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
SOIC
包装说明
SOP, SOP20,.4
针数
20
Reach Compliance Code
unknown
其他特性
OUTPUT ENABLE ACTIVE HIGH FOR ONE FUNCTION
控制类型
ENABLE LOW/HIGH
系列
F/FAST
JESD-30 代码
R-PDSO-G20
JESD-609代码
e4
长度
12.8 mm
负载电容(CL)
50 pF
逻辑集成电路类型
BUS DRIVER
最大I(ol)
0.064 A
湿度敏感等级
1
位数
4
功能数量
2
端口数量
2
端子数量
20
最高工作温度
70 °C
最低工作温度
输出特性
3-STATE
输出极性
TRUE
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP20,.4
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
电源
5 V
最大电源电流(ICC)
90 mA
Prop。Delay @ Nom-Sup
6.5 ns
传播延迟(tpd)
6.5 ns
认证状态
Not Qualified
座面最大高度
2.65 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
TTL
温度等级
COMMERCIAL
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
7.5 mm
Base Number Matches
1
文档预览
INTEGRATED CIRCUITS
74F241
Octal buffer (3-state)
Product data
Supersedes data of 2002 Mar 18
2004 Feb 25
Philips
Semiconductors
Philips Semiconductors
Product data
Octal buffer
74F241
FEATURES
Octal bus interface
3-state buffer outputs sink 64 mA
15 mA source current
TYPE
74F241
TYPICAL PROPAGATION DELAY
4.0 ns
DESCRIPTION
The 74F241 is an octal buffer that is ideal for driving bus lines of
buffer memory address registers. The outputs are all capable of
sinking 64 mA and sourcing up to 15 mA. The device features two
output enables, each controlling four of the 3-state outputs.
TYPICAL SUPPLY CURRENT (TOTAL)
53 mA
ORDERING INFORMATION
ORDER CODE
DESCRIPTION
20-pin plastic DIP
20-pin plastic SOL
COMMERCIAL RANGE
V
CC
= 5 V
±10%,
T
amb
= 0
°C
to +70
°C
N74F241N
N74F241D
PKG DWG #
SOT146-1
SOT163-1
INPUT AND OUTPUT LOADING AND FAN OUT TABLE
PINS
Ian, Ibn
OEa, OEb
Yan, Ybn
Data inputs
Output enable input
Data outputs
DESCRIPTION
74F (U.L.)
HIGH/LOW
1.0/2.67
1.0/1.67
750/106.7
LOAD VALUE
HIGH/LOW
20
µA/1.6
mA
20
µA/1
mA
15 mA/64 mA
Note to input and output loading and fan out table
One (1.0) FAST unit load is defined as: 20
µA
in the HIGH state and 0.6 mA in the LOW state.
PIN CONFIGURATION
OEa
Ia0
Yb0
Ia1
Yb1
Ia2
Yb2
Ia3
Yb3
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
CC
LOGIC SYMBOL
2
OEb
Ya0
Ib0
Ya1
Ib1
Ya2
Ib2
Ya3
Ib3
V
CC
= Pin 20
GND = Pin 10
18
16
14
12
3
5
7
9
1
19
Ia0
OEa
OEb
Ya0 Ya1 Ya2 Ya3 Yb0 Yb1 Yb2 Yb3
Ia1 Ia2
Ia3 Ib0
Ib1 Ib2
Ib3
4
6
8
17
15
13
11
SF00324
SF00325
2004 Feb 25
2
Philips Semiconductors
Product data
Octal buffer
74F241
IEC/IEEE SYMBOL
1
19
EN1
EN2
18
16
14
12
2
3
5
7
9
LOGIC DIAGRAM
Ia0
2
18
Ya0
Ib0
17
3
Yb0
2
4
6
8
17
15
13
11
2D
1
Ia1
4
16
Ya1
Ib1
15
5
Yb1
Ia2
6
14
Ya2
Ib2
13
7
Yb2
Ia3
8
12
Ya3
Ib3
11
9
Yb3
OEa
1
OEb
10
SF00326
V
CC
= Pin 20
GND = Pin 10
SF00327
FUNCTION TABLE
INPUTS
OEa
L
L
H
Ia
L
H
X
OEb
H
H
L
Ib
L
H
X
OUTPUTS
Ya
L
H
Z
Yb
L
H
Z
NOTES:
H = High voltage level
L = Low voltage level
X = Don’t care
Z = High impedance “off” state
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limit set forth in this table may impair the useful life of the device.
Unless otherwise noted these limits are over the operating free air temperature range.)
SYMBOL
V
CC
V
IN
I
IN
V
OUT
I
OUT
T
amb
T
stg
Supply voltage
Input voltage
Input current
Voltage applied to output in high output state
Current applied to output in low output state
Operating free air temperature range
Storage temperature range
PARAMETER
RATING
–0.5 to +7.0
–0.5 to +7.0
–30 to +5
–0.5 to V
CC
128
0 to +70
–65 to +150
UNIT
V
V
mA
V
mA
°C
°C
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
V
CC
V
IH
V
IL
I
Ik
I
OH
I
OL
T
amb
2004 Feb 25
Supply voltage
High-level input voltage
Low-level input voltage
Input clamp current
High-level output current
Low-level output current
Operating free air temperature range
3
0
PARAMETER
MIN
4.5
2.0
0.8
–18
–15
64
+70
NOM
5.0
MAX
5.5
UNIT
V
V
V
mA
mA
mA
°C
Philips Semiconductors
Product data
Octal buffer
74F241
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
PARAMETER
TEST CONDITIONS
1
MIN
I
O
= –3 mA
3
OH
±10%V
CC
±5%V
CC
±10%V
CC
±5%V
CC
±10%V
CC
±5%V
CC
0.42
–0.73
2.4
2.7
2.0
2.0
0.50
0.50
–1.2
100
20
–1.0
–1.6
V
CC
= MAX, V
O
= 2.7 V
V
CC
= MAX, V
O
= 0.5 V
V
CC
= MAX
I
CCH
I
CC
Supply current (total)
I
CCL
I
CCZ
V
CC
= MAX
–100
40
60
65
50
–50
–225
60
90
90
3.4
LIMITS
TYP
2
MAX
V
V
V
V
V
V
V
µA
µA
mA
mA
µA
µA
mA
mA
mA
mA
UNIT
V
O
OH
High-level
High level output voltage
V
CC
= MIN; V
IL
= MAX; V
IH
=
MIN
I
O
= –15 mA
15
OH
V
O
OL
V
IK
I
I
I
IH
I
IL
Low-level
Low level output voltage
Input clamp voltage
Input current at maximum input voltage
High-level input current
Low-level input current
Off-state output current,
high-level voltage applied
Off-state output current,
low-level voltage applied
Short-circuit output current
3
OEa,
OEb
Ian, Ibn
V
CC
= MIN; V
IL
= MAX; V
IH
=
MIN
V
CC
= MIN; I
I
= I
IK
I
O
= MAX
OL
V
CC
= MAX; V
I
= 7.0 V
V
CC
= MAX; V
I
= 2.7 V
V
CC
= MAX; V
I
= 0.5 V
I
OZH
I
OZL
I
OS
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
CC
= 5 V, T
amb
= 25
°C.
3. Not more than one output should be shorted at a time. For testing I
OS
, the use of high-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged
shorting of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In
any sequence of parameter tests, I
OS
tests should be performed last.
2004 Feb 25
4
Philips Semiconductors
Product data
Octal buffer
74F241
AC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST
CONDITION
T
amb
= +25
°C
V
CC
= +5.0 V
C
L
= 50 pF; R
L
= 500
MIN
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Propagation delay
Ian, Ibn to Yn
Output enable time
to high or low level
Output disable time
from high or low level
Waveform 1
Waveform 2, 3
Waveform 2, 3
2.5
2.5
2.0
2.0
2.0
2.0
TYP
4.0
4.0
4.0
5.0
4.0
4.0
MAX
5.2
5.2
5.7
7.0
6.0
6.0
T
amb
= 0
°C
to +70
°C
V
CC
= +5.0 V
±
10%
C
L
= 50 pF; R
L
= 500
MIN
2.5
2.5
2.0
2.0
2.0
2.0
MAX
6.2
6.5
6.7
8.0
7.0
7.0
ns
ns
ns
UNIT
NOTES:
1. | t
PN
actual – t
PM
actual| for any output compared to any other output where N and M are either LH or HL.
2004 Feb 25
5
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参数对比
与N74F241D相近的元器件有:N74F241N、N74F241D-T。描述及对比如下:
型号 N74F241D N74F241N N74F241D-T
描述 Buffers & Line Drivers OCTAL BUFFER 3-STATE Buffers u0026 Line Drivers OCTAL BUFFER 3-STATE Buffers & Line Drivers OCTAL BUFFER 3-STATE
是否Rohs认证 符合 符合 符合
厂商名称 NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
零件包装代码 SOIC DIP SOIC
包装说明 SOP, SOP20,.4 DIP, DIP20,.3 SOP,
针数 20 20 20
Reach Compliance Code unknown unknown unknown
其他特性 OUTPUT ENABLE ACTIVE HIGH FOR ONE FUNCTION OUTPUT ENABLE ACTIVE HIGH FOR ONE FUNCTION OUTPUT ENABLE ACTIVE HIGH FOR ONE FUNCTION
系列 F/FAST F/FAST F/FAST
JESD-30 代码 R-PDSO-G20 R-PDIP-T20 R-PDSO-G20
JESD-609代码 e4 e4 e4
长度 12.8 mm 26.73 mm 12.8 mm
负载电容(CL) 50 pF 50 pF 50 pF
逻辑集成电路类型 BUS DRIVER BUS DRIVER BUS DRIVER
位数 4 4 4
功能数量 2 2 2
端口数量 2 2 2
端子数量 20 20 20
最高工作温度 70 °C 70 °C 70 °C
输出特性 3-STATE 3-STATE 3-STATE
输出极性 TRUE TRUE TRUE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 NOT SPECIFIED 260
最大电源电流(ICC) 90 mA 90 mA 90 mA
传播延迟(tpd) 6.5 ns 6.5 ns 6.5 ns
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 2.65 mm 4.2 mm 2.65 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V
表面贴装 YES NO YES
技术 TTL TTL TTL
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) NICKEL PALLADIUM GOLD
端子形式 GULL WING THROUGH-HOLE GULL WING
端子节距 1.27 mm 2.54 mm 1.27 mm
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 NOT SPECIFIED 30
宽度 7.5 mm 7.62 mm 7.5 mm
Base Number Matches 1 1 1
是否无铅 不含铅 不含铅 -
控制类型 ENABLE LOW/HIGH ENABLE LOW/HIGH -
最大I(ol) 0.064 A 0.064 A -
湿度敏感等级 1 - 1
封装等效代码 SOP20,.4 DIP20,.3 -
电源 5 V 5 V -
Prop。Delay @ Nom-Sup 6.5 ns 6.5 ns -
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