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NBSG16MNHTBG

Buffers & Line Drivers 2.5/3.3V SIGE DF/RCV BBG

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
QFN
包装说明
HVQCCN, LCC16,.12SQ,20
针数
16
制造商包装代码
485G-01
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
其他特性
NECL MODE: VCC = 0V WITH VEE = -2.375V TO -3.465V
差分输出
YES
驱动器位数
1
高电平输入电流最大值
0.0001 A
输入特性
DIFFERENTIAL
接口集成电路类型
LINE TRANSCEIVER
接口标准
GENERAL PURPOSE
JESD-30 代码
S-XQCC-N16
长度
3 mm
湿度敏感等级
1
功能数量
1
端子数量
16
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
UNSPECIFIED
封装代码
HVQCCN
封装等效代码
LCC16,.12SQ,20
封装形状
SQUARE
封装形式
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)
260
电源
+-2.5/+-3.3 V
认证状态
Not Qualified
最大接收延迟
0.145 ns
接收器位数
1
座面最大高度
1 mm
最大压摆率
29 mA
最大供电电压
3.465 V
最小供电电压
2.375 V
标称供电电压
2.5 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
Nickel/Gold/Palladium (Ni/Au/Pd)
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
40
最大传输延迟
0.145 ns
宽度
3 mm
文档预览
NBSG16
2.5 V/3.3 V SiGe Differential
Receiver/Driver with
RSECL* Outputs
*Reduced Swing ECL
http://onsemi.com
Description
Features
Maximum Input Clock Frequency > 12 GHz Typical
Maximum Input Data Rate > 12 Gb/s Typical
120 ps Typical Propagation Delay
40 ps Typical Rise and Fall Times
RSPECL Output with Operating Range: V
CC
= 2.375 V to 3.465 V
with V
EE
= 0 V
RSNECL Output with RSNECL or NECL Inputs with
Operating Range: V
CC
= 0 V with V
EE
= −2.375 V to −3.465 V
RSECL Output Level (400 mV Peak-to-Peak Output), Differential
Output Only
50
W
Internal Input Termination Resistors
Compatible with Existing 2.5 V/3.3 V LVEP, EP, and LVEL Devices
V
BB
and V
MM
Reference Voltage Output
These are Pb-Free Devices
A
L
Y
W
G
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 20
ÇÇÇ
ÇÇÇ
1
The NBSG16 is a differential receiver/driver targeted for high
frequency applications. The device is functionally equivalent to the
EP16 and LVEP16 devices with much higher bandwidth and lower
EMI capabilities.
Inputs incorporate internal 50
W
termination resistors and accept
NECL (Negative ECL), PECL (Positive ECL), HSTL, LVTTL,
LVCMOS, CML, or LVDS. Outputs are RSECL (Reduced Swing
ECL), 400 mV.
The V
BB
and V
MM
pins are internally generated voltage supplies
available to this device only. The V
BB
is used as a reference voltage
for single-ended NECL or PECL inputs and the V
MM
pin is used as
a reference voltage for LVCMOS inputs. For all single-ended input
conditions, the unused complementary differential input is connected
to V
BB
or V
MM
as a switching reference voltage. V
BB
or V
MM
may
also rebias AC coupled inputs. When used, decouple V
BB
and V
MM
via a 0.01
mF
capacitor and limit current sourcing or sinking to
0.5 mA. When not used, V
BB
and V
MM
outputs should be left open.
QFN−16
MN SUFFIX
CASE 485G
MARKING DIAGRAMS*
16
SG
16
ALYWG
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Package
Publication Order Number:
NBSG16/D
NBSG16
V
EE
V
BB
16
VTD
D
D
VTD
15
V
MM
V
EE
14
13
Exposed Pad (EP)
1
2
NBSG16
3
4
12
11
10
9
V
CC
Q
Q
V
CC
5
V
EE
6
NC
7
NC
8
V
EE
Figure 1. QFN−16 Pinout
(Top View)
Table 1. PIN DESCRIPTION
Pin
1
2
Name
VTD
D
I/O
ECL, CML,
LVCMOS, LVDS,
LVTTL Input
ECL, CML,
LVCMOS, LVDS,
LVTTL Input
RSECL Output
RSECL Output
Description
Internal 50
W
Termination Pin. See Table 2.
Inverted Differential Input. Internal 75 kW to V
EE
and 36.5 kW to V
CC
.
3
D
Noninverted differential input. Internal 75 kW to V
EE
4
5, 8,
13, 16
6,7
9, 12
10
11
14
15
VTD
V
EE
NC
V
CC
Q
Q
V
MM
V
BB
EP
Internal 50
W
Termination Pin. See Table 2.
Negative Supply Voltage
No Connect
Positive Supply Voltage
Noninverted Differential Output. Typically Terminated with 50
W
to V
TT
= V
CC
− 2 V
Inverted Differential Output. Typically Terminated with 50
W
to V
TT
= V
CC
− 2 V
LVCMOS Reference Voltage Output. (V
CC
− V
EE
)/2
ECL Reference Voltage Output
The Exposed Pad (EP) on the QFN−16 package bottom is thermally connected to the die for
improved heat transfer out of package. The exposed pad must be attached to a heat-sinking
conduit. The pad is not electrically connected to the die but may be electrically and thermally
connected to V
EE
on the PC board.
1. All V
CC
and V
EE
pins must be externally connected to Power Supply to guarantee proper operation. The thermally exposed pad on package
bottom (see case drawing) must be attached to a heat-sinking conduit.
2. In the differential configuration when the input termination pins (VTD, VTD) are connected to a common termination voltage, and if no signal
is applied then the device will be susceptible to self-oscillation.
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2
NBSG16
V
CC
VTD
50
W
D
D
50
W
VTD
75 kW
36.5
KW
V
MM
Q
Q
75 kW
V
BB
V
EE
Figure 2. Logic Diagram
Table 2. INTERFACING OPTIONS
INTERFACING OPTIONS
CML
LVDS
AC−COUPLED
RSECL, PECL, NECL
LVTTL
CONNECTIONS
Connect VTD and VTD to V
CC
Connect VTD and VTD together
Bias VTD and VTD Inputs within (V
IHCMR
)
Common Mode Range
Standard ECL Termination Techniques
The external voltage should be applied to the
unused complementary differential input.
Nominal voltage is 1.5 V for LVTTL.
V
MM
should be connected to the unused
complementary differential input.
LVCMOS
Table 3. ATTRIBUTES
Characteristics
Internal Input Pulldown Resistor (D, D)
Internal Input Pullup Resistor (D)
ESD Protection
Moisture Sensitivity (Note 3)
Flammability Rating
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
3. For additional information, see Application Note AND8003/D.
Human Body Model
Machine Model
Pb-Free
Oxygen Index: 28 to 34
Value
75 kW
36.5 kW
> 2 kV
> 100 V
Level 1
UL 94 V−0 @ 0.125 in
167
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3
NBSG16
Table 4. MAXIMUM RATINGS
Symbol
V
CC
V
EE
V
I
V
INPP
I
out
I
BB
I
MM
T
A
T
stg
q
JA
q
JC
T
sol
Parameter
Positive Power Supply
Negative Power Supply
Positive Input
Negative Input
Differential Input Voltage
Output Current
V
BB
Sink/Source
V
MM
Sink/Source
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction-to-Ambient)
(Note 4)
Thermal Resistance (Junction-to-Case)
Wave Solder
Pb-Free
0 lfpm
500 lfpm
2S2P (Note 4)
|D − D|
Condition 1
V
EE
= 0 V
V
CC
= 0 V
V
EE
= 0 V
V
CC
= 0 V
V
CC
− V
EE
2.8 V
V
CC
− V
EE
< 2.8 V
Continuous
Surge
V
I
V
CC
V
I
V
EE
Condition 2
Rating
3.6
−3.6
3.6
−3.6
2.8
|V
CC
− V
EE
|
25
50
1
1
−40 to +85
−65 to +150
41.6
35.2
4.0
265
Unit
V
V
V
V
V
mA
mA
mA
°C
°C
°C/W
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
4. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
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4
NBSG16
Table 5. DC CHARACTERISTICS, INPUT WITH RSPECL OUTPUT
(V
CC
= 2.5 V; V
EE
= 0 V) (Note 5)
−40°C
Symbol
Characteristic
Min
Typ
Max
Min
25°C
Typ
Max
Min
85°C
Typ
Max
Unit
POWER SUPPLY CURRENT
I
EE
Negative Power Supply Current
17
23
29
17
23
29
17
23
29
mA
RSPECL OUTPUTS
(Note 6)
V
OH
V
OUTPP
Output HIGH Voltage
Output Voltage Amplitude
1450
350
1530
410
1575
525
1525
350
1565
410
1600
525
1550
350
1590
410
1625
525
mV
mV
DIFFERENTIAL CLOCK INPUTS DRIVEN SINGLE-ENDED
(Figures 5 & 7) (Note 7)
V
IH
V
IL
V
th
V
ISE
V
BB
Input HIGH Voltage
Input LOW Voltage
Input Threshold Voltage Range
(Note 8)
Single-Ended Input Voltage
(V
IH
– V
IL
)
PECL Output Voltage Reference
1200
0
950
150
1080
1140
V
CC
V
IH
150
V
CC
75
2600
1200
1200
0
950
150
1080
1140
V
CC
V
IH
150
V
CC
75
2600
1200
1200
0
950
150
1080
1140
V
CC
V
IH
150
V
CC
75
260
1200
mV
mV
mV
mV
mV
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY
(Figures 6 & 8) (Note 9)
V
IHD
V
ILD
V
ID
V
IHCMR
I
IH
I
IL
Differential Input HIGH Voltage
Differential Input LOW Voltage
Differential Input Voltage
(V
IHD
– V
ILD
)
Input HIGH Voltage Common Mode
Range (Note 10) (Figure 9)
Input HIGH Current (@V
IH
)
Input LOW Current (@V
IL
)
1200
0
75
1200
30
25
V
CC
V
IHD
75
2600
2500
100
50
1200
0
75
1200
30
25
V
CC
V
IHD
75
2600
2500
100
50
1200
0
75
1200
30
25
V
CC
V
IHD
75
2600
2500
100
50
mV
mV
mV
mV
mA
mA
LVCMOS CONTROL PIN
V
MM
CMOS Output Voltage Reference
V
CC
/2
1100
1250
1400
1100
1250
1400
1100
1250
1400
mV
TERMINATION RESISTORS
R
TIN
Internal Input Termination Resistor
45
50
55
45
50
55
45
50
55
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. Input and output parameters vary 1:1 with V
CC
.
6. All loading with 50
W
to V
CC
− 2.0 V.
7. V
th
, V
IH
, V
IL,
and V
ISE
parameters must be complied with simultaneously.
8. V
th
is applied to the complementary input when operating in single-ended mode. V
th
= (V
IH
− V
IL
) / 2.
9. V
IHD
, V
ILD,
V
ID
and V
IHCMR
parameters must be complied with simultaneously.
10. V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
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参数对比
与NBSG16MNHTBG相近的元器件有:NBSG16MNR2G、NBSG16MNG。描述及对比如下:
型号 NBSG16MNHTBG NBSG16MNR2G NBSG16MNG
描述 Buffers & Line Drivers 2.5/3.3V SIGE DF/RCV BBG Buffers & Line Drivers 2.5V/3.3V SiGe Diff Receiver w/RSECL Buffers & Line Drivers 2.5V/3.3V SiGe Diff Receiver w/RSECL
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 QFN QFN QFN
包装说明 HVQCCN, LCC16,.12SQ,20 HVQCCN, LCC16,.12SQ,20 HVQCCN, LCC16,.12SQ,20
针数 16 16 16
制造商包装代码 485G-01 485G-01 485G-01
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
Factory Lead Time 1 week 1 week 1 week
其他特性 NECL MODE: VCC = 0V WITH VEE = -2.375V TO -3.465V NECL MODE: VCC = 0V WITH VEE = -2.375V TO -3.465V NECL MODE: VCC = 0V WITH VEE = -2.375V TO -3.465V
差分输出 YES YES YES
驱动器位数 1 1 1
输入特性 DIFFERENTIAL DIFFERENTIAL DIFFERENTIAL
接口集成电路类型 LINE TRANSCEIVER LINE TRANSCEIVER LINE TRANSCEIVER
接口标准 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
JESD-30 代码 S-XQCC-N16 S-XQCC-N16 S-XQCC-N16
长度 3 mm 3 mm 3 mm
湿度敏感等级 1 1 1
功能数量 1 1 1
端子数量 16 16 16
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 HVQCCN HVQCCN HVQCCN
封装等效代码 LCC16,.12SQ,20 LCC16,.12SQ,20 LCC16,.12SQ,20
封装形状 SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度) 260 260 260
电源 +-2.5/+-3.3 V +-2.5/+-3.3 V +-2.5/+-3.3 V
认证状态 Not Qualified Not Qualified Not Qualified
最大接收延迟 0.145 ns 0.145 ns 0.145 ns
接收器位数 1 1 1
座面最大高度 1 mm 1 mm 1 mm
最大供电电压 3.465 V 3.465 V 3.465 V
最小供电电压 2.375 V 2.375 V 2.375 V
标称供电电压 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Nickel/Gold/Palladium (Ni/Au/Pd) Nickel/Gold/Palladium (Ni/Au/Pd) Nickel/Gold/Palladium (Ni/Au/Pd)
端子形式 NO LEAD NO LEAD NO LEAD
端子节距 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD
处于峰值回流温度下的最长时间 40 40 40
最大传输延迟 0.145 ns 0.145 ns 0.145 ns
宽度 3 mm 3 mm 3 mm
是否Rohs认证 符合 符合 -
Is Samacsys - N N
技术 - ECL ECL
Base Number Matches - 1 1
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