Pb Free Product
http://www.ncepower.com
NCE1520K
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE1520K uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
General Features
●
V
DS
= 150V,I
D
=20A
R
DS(ON)
<85mΩ @ V
GS
=10V (Typ:70mΩ)
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
Schematic diagram
Application
●
Boost converters
●
LED backlighting
●
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-252 -2Ltop view
Package Marking and Ordering Information
Device Marking
NCE1520K
Device
NCE1520K
Device Package
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
E
AS
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
Parameter
Limit
150
±20
20
14
40
75
0.5
200
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
DM
P
D
T
J
,T
STG
Thermal Characteristic
R
θJC
Thermal Resistance, Junction-to-Case
(Note 2)
2.0
℃
/W
Wuxi NCE Power Co., Ltd
Page 1
v1.0
Pb Free Product
http://www.ncepower.com
NCE1520K
Condition
V
GS
=0V I
D
=250μA
V
DS
=150V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=10A
V
DS
=5V,I
D
=10A
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Symbol
Off Characteristics
BV
DSS
I
DSS
I
GSS
On Characteristics
(Note 3)
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
t
on
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Min
150
-
-
2
-
-
-
-
-
-
Typ
165
-
-
3.4
70
20
2000
290
180
10.5
5.5
14.5
3
17
4
4.4
-
-
32
53
Max
-
1
±100
4
85
-
-
-
-
-
-
-
-
-
-
-
1.2
20
-
-
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Dynamic Characteristics
(Note4)
V
DS
=25V,V
GS
=0V,
F=1.0MHz
Switching Characteristics
(Note 4)
V
DD
=75V,R
L
=5Ω
V
GS
=10V,R
GEN
=3Ω
-
-
-
V
DS
=75V,I
D
=10A,
V
GS
=10V
-
-
-
-
-
-
-
(Note3)
Drain-Source Diode Characteristics
V
GS
=0V,I
S
=20A
-
TJ = 25°C, IF = 10A
di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t
≤
10 sec.
3. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25
℃
,V
DD
=50V,V
G
=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Co., Ltd
Page 2
v1.0
Pb Free Product
http://www.ncepower.com
NCE1520K
Test Circuit
1) E
AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Co., Ltd
Page 3
v1.0
Pb Free Product
http://www.ncepower.com
Typical Electrical and Thermal Characteristics (Curves)
NCE1520K
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 5 Gate Charge
I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Wuxi NCE Power Co., Ltd
Figure 6 Source- Drain Diode Forward
Page 4
v1.0
Pb Free Product
http://www.ncepower.com
NCE1520K
Power Dissipation (W)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature (℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
I
D
- Drain Current (A)
I
D
Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10ID Current- Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Co., Ltd
Page 5
v1.0
