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NCE2025S
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE2025S uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
General Features
●V
DS
=20V,I
D
=25A
R
DS(ON)
< 4mΩ @ V
GS
=4.5V
R
DS(ON)
< 6mΩ @ V
GS
=2.5V
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
Schematic diagram
Application
●
DC/DC Converter
●
Battery protection
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
NCE2025S
Device
NCE2025S
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
A
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
20
±12
25
17.7
140
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
I
DM
P
D
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
50
℃
/W
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Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=25A
-
-
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=10V,I
D
=20A,
V
GS
=4.5V
V
DD
=10V, R
L
=0.5Ω
V
GS
=4. 5V,R
GEN
=3Ω
-
-
-
-
-
-
-
C
lss
C
oss
C
rss
V
DS
=10V,V
GS
=0V,
F=1.0MHz
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=20A
V
GS
=2.5V, I
D
=18A
V
DS
=5V,I
D
=20A
60
0.5
-
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
20
-
-
NCE2025S
Condition
Min
Typ
-
-
-
0.75
3.5
4.2
-
5300
785
629
10
12
50
20
64.9
6.5
13.8
-
-
Symbol
Max
-
1
±100
1.2
4
6
-
-
-
-
-
-
-
-
-
-
-
1.2
25
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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NCE2025S
Test Circuit
1) E
AS
Test Circuits
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics (Curves)
NCE2025S
I
D
- Drain Current (A)
Normalized On-Resistance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
I
s
- Reverse Drain Current (A)
Figure 5 Gate Charge
Rdson On-Resistance(
Ω)
I
D
- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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NCE2025S
C Capacitance (pF)
Normalized BVdss
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Current vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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