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NCE55P04S
D1
D2
NCE P-Channel
Enhancement Mode Power MOSFET
Description
The NCE55P04S uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
S1
S2
G1
G2
General Features
●
V
DS
=-55V,I
D
=-4A
R
DS(ON)
<82mΩ @ V
GS
=-10V
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Schematic diagram
Application
●
●
●
Power switching application
Hard switched and high frequency circuits
DC-DC Converter
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
NCE55P04S
Device
NCE55P04S
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
-55
±20
-4
-2.8
-25
3
-55 To 150
Unit
V
V
A
A
A
W
℃
I
D
I
D
(100℃)
I
DM
P
D
T
J
,T
STG
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient
(Note 2)
R
θJA
42
℃
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
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Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=-4A
-
-
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-30V,I
D
=-4A,
V
GS
=-10V
V
DD
=-30V, ,R
L
=30Ω
V
GS
=-10V,R
GEN
=6Ω
-
-
-
-
-
-
-
C
lss
C
oss
C
rss
V
DS
=-25V,V
GS
=0V,
F=1.0MHz
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-4A
V
DS
=-15V,I
D
=-4A
-1.5
-
16
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=-250μA
V
DS
=-55V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
-55
-
-
NCE55P04S
-
-
-
-2.6
66
-
1450
145
110
8
9
65
30
26
4.5
7
-
-
-
-1
±100
-3.5
82
-
-
-
-
-
-
-
-
-
-
-
-1.2
-4
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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NCE55P04S
Test Circuit
1) E
AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics
(Curves)
NCE55P04S
Normalized On-Resistance
-I
D
- Drain Current (A)
-Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
-I
D
- Drain Current (A)
-Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance Normalized
Figure 5 Gate Charge
-I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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NCE55P04S
C Capacitance (pF)
Normalized BVdss
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature (℃)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 V
GS(th)
vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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模拟电子
