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NCE60P50
NCE P-Channel
Enhancement Mode Power MOSFET
Description
The NCE60P50 uses advanced trench technology and design
to provide excellent R
DS(ON)
with low gate charge .This device is
well suited for high current load applications.
General Features
●
V
DS
=-60V,I
D
=-50A
R
DS(ON)
<28mΩ @ V
GS
=-10V
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
Schematic diagram
Application
●
Load switch
Marking and pin assignment
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
NCE60P50
Device
NCE60P50
Device Package
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
-60
±20
-50
-35
-150
95
0.76
722
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
DM
P
D
T
J
,T
STG
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NCE60P50
R
θJC
1.31
℃
/W
Thermal Characteristic
Thermal Resistance, Junction-to-Case
(Note 2)
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
t
on
Condition
V
GS
=0V I
D
=-250μA
V
DS
=-60V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-20A
V
DS
=-10V,I
D
=-10A
Min
-60
-
-
-1.2
-
-
-
-
-
-
Typ
-
-
-
-1.9
23
25
6460
719
535
15
17
40
45
75
16
19
Max
-
-1
±100
-2.5
28
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
DS
=-25V,V
GS
=0V,
F=1.0MHz
V
DD
=-30V, R
L
=1.5Ω，
V
GS
=-10V,R
G
=3Ω
-
-
-
-
-
-
-
-
V
DS
=-30,I
D
=-10A,
V
GS
=-10V
V
GS
=0V,I
S
=-10A
TJ = 25°C, IF =- 10A
di/dt = -100A/μs
(Note3)
-1.2
-
50
59
-20
V
A
nS
nC
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
E
AS
condition: Tj=25℃,V
DD
=-20V,V
G
=-10V,L=1mH,Rg=25Ω,I
AS
=38A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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NCE60P50
Test Circuit
1) E
AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics (Curves)
NCE60P50
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance(mΩ)
I
s
- Reverse Drain Current (A)
Figure 5 Gate Charge
I
D
- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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NCE60P50
C Capacitance (pF)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 ID Current Derating vs Junction
Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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