NCE70R900I，NCE70R900K
N-Channel
Super Junction Power MOSFET
Ⅱ
General Description
The
series of devices
use advanced super junction
technology and design to provide excellent R
DS(ON)
with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
V
DS
R
DS(ON)TYP.
I
D
700
840
5
V
mΩ
A
Features
●New
technology for high voltage device
●Low
on-resistance and low conduction losses
●Small
package
●Ultra
Low Gate Charge cause lower driving requirements
●100%
Avalanche Tested
●ROHS
compliant
Application
●
●
●
Power factor correction（PFC）
Switched mode power supplies(SMPS)
Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
NCE70R900I
NCE70R900K
Device Package
TO-251
TO-252
Marking
NCE70R900I
NCE70R900K
TO-251
Absolute Maximum Ratings (T
C
=25℃)
Parameter
Symbol
Drain-Source Voltage (
V
GS=
0V）
V
DS
Gate-Source Voltage (
V
DS=
0V)
V
GS
Continuous Drain Current at Tc=25°C
I
D (DC)
Continuous Drain Current at Tc=100°C
I
D (DC)
(Note 1)
I
DM (pluse)
Pulsed drain current
Table 1.
Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25
℃)
Derate above 25
°C
(Note2)
TO-252
Value
700
±30
5
3
15
48
49
0.39
135
2.5
Unit
V
V
A
A
A
dv/dt
V/ns
W
W/
°C
P
D
E
AS
I
AR
Single pulse avalanche energy
Avalanche current
(Note 1)
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE70R900I，NCE70R900K
Parameter
Repetitive Avalanche energy
，t
AR
limited by T
jmax
(Note 1)
Symbol
E
AR
Value
0.4
-55...+150
Unit
mJ
°C
Operating Junction and Storage Temperature Range
T
J
,T
STG
Table 2.
Thermal Characteristic
Parameter
Symbol
R
thJC
R
thJA
Value
2.55
75
Unit
°C /W
°C /W
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient
（Maximum）
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
rrm
Tj=25°C,I
F
=5A,di/dt=100A/μs
V
DD
=380V,I
D
=3A,
R
G
=18Ω,V
GS
=10V
V
GS
=0V I
D
=250μA
V
DS
=700V,V
GS
=0V
V
DS
=700V,V
GS
=0V
V
GS
=±30V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=2.5A
V
DS
= 20V, I
D
= 3A
V
DS
=50V,V
GS
=0V,
F=1.0MHz
Min
700
Typ
Max
Unit
V
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak reverse recovery current
2.
Tj=25℃,VDD=50V,VG=10V, R
G
=25Ω
T
C
=25°C
Tj=25°C,I
SD
=5A,V
GS
=0V
1
250
2.2
15
5
15
1.3
A
A
V
nS
uC
A
6
3
50
9
60
15
nS
nS
nS
nS
4.8
460
45
3.5
10
1.6
4
2.5
20
S
pF
pF
pF
nC
nC
nC
Ω
1
50
±100
2.5
3
840
3.5
950
μA
μA
nA
V
mΩ
V
DS
=480V,I
D
=5A,
V
GS
=10V
f = 1 MHz open drain
Notes:
1.Repetitive Rating: Pulse width limited by maximum junction temperature
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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v1.0
NCE70R900I，NCE70R900K
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. R
DS(ON)
vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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v1.0
NCE70R900I，NCE70R900K
Figure7. BV
DSS
vs Junction Temperature
Figure8. Maximum I
D
vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
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v1.0
NCE70R900I，NCE70R900K
Test circuit
1）Gate charge test circuit & Waveform
2）Switch Time Test Circuit：
3）Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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v1.0
