Pb Free Product
http://www.ncepower.com
NCE8804
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE8804 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
●
V
DS
= 20V,I
D
=8A
R
DS(ON)
< 19mΩ @ V
GS
=2.5V
R
DS(ON)
< 15mΩ @ V
GS
=4.5V
ESD Rating: 2000V HBM
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Schematic diagram
Marking and pin assignment
Application
●
Uni-directional load switch
●
Bi-directional load switch
TSSOP-8 top view
Package Marking and Ordering Information
Device Marking
8804
Device
NCE8804
Device Package
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
20
±12
8
30
2
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
62.5
℃
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
20
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
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Parameter
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=8A
-
-
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=10V,I
D
=8A,
V
GS
=4.5V
V
DD
=10V,R
L
=1.2Ω
V
GS
=10V,R
GEN
=3Ω
-
-
-
-
-
-
-
C
lss
C
oss
C
rss
V
DS
=10V,V
GS
=0V,
F=1.0MHz
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
V
DS
=5V,I
D
=5A
NCE8804
Condition
V
GS
=±10V,V
DS
=0V
Symbol
I
GSS
Min
-
0.45
-
-
-
Typ
-
0.7
11
15
15
1800
230
200
2.5
7.2
49
10.8
17.9
1.5
4.7
-
-
Max
±10
1.0
15
19
-
-
-
-
Unit
μA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
-
-
1.2
8
nC
nC
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics
Vdd
Rl
D
G
S
Vout
t
d(on)
t
on
t
r
90%
NCE8804
t
off
t
f
90%
t
d(off)
Vin
Vgs
Rgen
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
Rdson On-Resistance(mΩ)
P
D
Power(W)
I
D
- Drain Current (A)
Figure 3 Power Dissipation
Figure 6 Drain-Source On-Resistance
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 5 Output Characteristics
Figure 8 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE8804
I
D
- Drain Current (A)
C Capacitance (pF)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 7 Transfer Characteristics
I
s
- Reverse Drain Current (A)
Figure 8 Capacitance vs Vds
Rdson (mΩ)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10Source-DrainDiodeForward
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 11 Gate Charge
Figure 13 Safe Operation Area
Wuxi NCE Power Semiconductor Co., Ltd
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NCE8804
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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