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NCP114AMX120TBG

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厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
产品种类
Product Category
LDO Voltage Regulators
制造商
Manufacturer
ON Semiconductor(安森美)
RoHS
Details
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
uDFN-4
Output Voltage
1.2 V
Output Current
300 mA
Number of Outputs
1 Output
Quiescent Current
50 uA
Input Voltage MAX
5.5 V
Input Voltage MIN
1.7 V
输出类型
Output Type
Fixed
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
Load Regulation
12 mV
Dropout Voltage
365 mV
系列
Packaging
Reel
系列
Packaging
MouseReel
系列
Packaging
Cut Tape
Dropout Voltage - Max
460 mV
Line Regulation
0.01 %/V
产品
Product
LDO Voltage Regulators
PSRR / Ripple Rejection - Typ
75 dB
工厂包装数量
Factory Pack Quantity
3000
类型
Type
CMOS LDO Regulator
Voltage Regulation Accuracy
40 mV
单位重量
Unit Weight
0.000300 oz
文档预览
NCP114
300 mA CMOS Low Dropout
Regulator
The NCP114 is 300 mA LDO that provides the engineer with a very
stable, accurate voltage with low noise suitable for space constrained,
noise sensitive applications. In order to optimize performance for
battery operated portable applications, the NCP114 employs the
dynamic quiescent current adjustment for very low I
Q
consumption at
no−load.
Features
www.onsemi.com
MARKING
DIAGRAMS
UDFN4
MX SUFFIX
CASE 517CU
XX M
1
Operating Input Voltage Range: 1.7 V to 5.5 V
Available in Fixed Voltage Options: 0.75 V to 3.6 V
Contact Factory for Other Voltage Options
Very Low Quiescent Current of Typ. 50
mA
Standby Current Consumption: Typ. 0.1
mA
Low Dropout: 135 mV Typical at 300 mA
±1%
Accuracy at Room Temperature
High Power Supply Ripple Rejection: 75 dB at 1 kHz
Thermal Shutdown and Current Limit Protections
Stable with a 1
mF
Ceramic Output Capacitor
Available in UDFN and TSOP Packages
These are Pb−Free Devices
1
XX = Specific Device Code
M = Date Code
5
TSOP−5
SN SUFFIX
CASE 483
1
XXX = Specific Device Code
A
= Assembly Location
Y
= Year
W = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
XXXAYWG
G
Typical Applicaitons
PDAs, Mobile phones, GPS, Smartphones
Wireless Handsets, Wireless LAN, Bluetooth
®
, Zigbee
®
Portable Medical Equipment
Other Battery Powered Applications
V
IN
IN
C
IN
ON
OFF
NCP114
EN
GND
OUT
C
OUT
1
mF
Ceramic
V
OUT
PIN CONNECTIONS
EN
3
IN
4
2
1
GND
OUT
(Bottom View)
Figure 1. Typical Application Schematic
IN
GND
EN
1
2
3
(Top View)
4 N/C
5 OUT
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 15 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
September, 2017 − Rev. 27
Publication Order Number:
NCP114/D
NCP114
IN
ENABLE
LOGIC
BANDGAP
REFERENCE
THERMAL
SHUTDOWN
EN
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT
AUTO LOW
POWER MODE
ACTIVE
DISCHARGE*
EN
GND
*Active output discharge function is present only in NCP114AMXyyyTCG devices.
yyy denotes the particular V
OUT
option.
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
(UDFN4)
1
2
3
4
Pin No.
(TSOP5)
5
2
3
1
4
Pin Name
OUT
GND
EN
IN
N/C
EPAD
Description
Regulated output voltage pin. A small ceramic capacitor with minimum value of 1
mF
is need-
ed from this pin to ground to assure stability.
Power supply ground.
Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into
shutdown mode.
Input pin. A small capacitor is needed from this pin to ground to assure stability.
Not connected. This pin can be tied to ground to improve thermal dissipation.
Exposed pad should be connected directly to the GND pin. Soldered to a large ground cop-
per plane allows for effective heat removal.
ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (Note 1)
Output Voltage
Enable Input
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
Symbol
V
IN
V
OUT
V
EN
t
SC
T
J(MAX)
T
STG
ESD
HBM
ESD
MM
Value
−0.3 V to 6 V
−0.3 V to V
IN
+ 0.3 V or 6 V
−0.3 V to V
IN
+ 0.3 V or 6 V
150
−55 to 150
2000
200
Unit
V
V
V
s
°C
°C
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114,
ESD Machine Model tested per EIA/JESD22−A115,
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
(Note 3)
Rating
Thermal Characteristics, UDFN4 1x1 mm
Thermal Resistance, Junction−to−Air
Thermal Characteristics, TSOP−5
Thermal Resistance, Junction−to−Air
3. Single component mounted on 1 oz, FR 4 PCB with 645 mm
2
Cu area.
Symbol
R
qJA
R
qJA
Value
170
236
Unit
°C/W
°C/W
www.onsemi.com
2
NCP114
ELECTRICAL CHARACTERISTICS
−40°C
T
J
85°C; V
IN
= V
OUT(NOM)
+ 1 V for V
OUT
options greater than 1.5 V. Otherwise V
IN
= 2.5 V, whichever is greater; I
OUT
= 1 mA,
C
IN
= C
OUT
= 1
mF,
unless otherwise noted. V
EN
= 0.9 V. Typical values are at T
J
= +25°C. Min./Max. are for T
J
= −40°C and T
J
= +85°C
respectively (Note 4).
Parameter
Operating Input Voltage
Output Voltage Accuracy
Line Regulation
Load Regulation − UDFN package
Load Regulation − TSOP−5 package
Load Transient
I
OUT
= 1 mA to 300 mA
I
OUT
= 1 mA to 300 mA or 300 mA to 1 mA
in 1
ms,
C
OUT
= 1
mF
V
OUT
= 1.5 V
V
OUT
= 1.85 V
Dropout Voltage − UDFN package (Note 5)
I
OUT
= 300 mA
V
OUT
= 2.8 V
V
OUT
= 3.0 V
V
OUT
= 3.1 V
V
OUT
= 3.3 V
V
OUT
= 1.5 V
V
OUT
= 1.85 V
Dropout Voltage − TSOP package (Note 5)
I
OUT
= 300 mA
V
OUT
= 2.8 V
V
OUT
= 3.0 V
V
OUT
= 3.1 V
V
OUT
= 3.3 V
Output Current Limit
Ground Current
Shutdown Current
EN Pin Threshold Voltage
High Threshold
Low Threshold
EN Pin Input Current
Power Supply Rejection Ratio
Output Noise Voltage
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Active Output Discharge Resistance
V
OUT
= 90% V
OUT(nom)
I
OUT =
0 mA
V
EN
0.4 V, V
IN
= 5.5 V
V
EN
Voltage increasing
V
EN
Voltage decreasing
V
EN
= 5.5 V
V
IN
= 3.6 V, V
OUT
= 3.1 V
I
OUT
= 150 mA
f = 1 kHz
I
CL
I
Q
I
DIS
V
EN_HI
V
EN_LO
I
EN
PSRR
V
N
T
SD
T
SDH
R
DIS
0.9
0.4
0.3
75
70
160
20
100
1.0
mA
dB
mV
rms
°C
°C
W
300
V
DO
V
DO
Reg
LOAD
Tran
LOAD
−40°C
T
J
85°C
V
OUT
2.0 V
V
OUT
> 2.0 V
Reg
LINE
Test Conditions
Symbol
V
IN
V
OUT
Min
1.7
−40
−2
0.01
12
28
−50/
+30
365
245
155
145
140
135
380
260
170
160
155
150
600
50
0.01
95
1
460
330
230
220
210
200
485
355
255
245
235
225
mA
mA
mA
V
mV
mV
Typ
Max
5.5
+40
+2
0.1
30
45
mV
Unit
V
mV
%
%/V
mV
V
OUT
+ 0.5 V
V
IN
5.5 V (V
IN
1.7 V)
V
IN
= 2.5 V, V
OUT
= 1.8 V, I
OUT
= 150 mA
f = 10 Hz to 100 kHz
Temperature increasing from T
J
= +25°C
Temperature falling from T
SD
V
EN
< 0.4 V, Version A only
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at
T
J
= T
A
= 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when V
OUT
falls 100 mV below the regulated voltage at V
IN
= V
OUT(NOM)
+ 1 V.
www.onsemi.com
3
NCP114
TYPICAL CHARACTERISTICS
1.210
1.205
V
OUT
, OUTPUT VOLTAGE (V)
1.200
1.195
1.190
1.185
1.180
1.175
1.170
1.165
1.160
−40 −30 −20 −10 0
10
20 30 40
V
IN
= 2.5 V
V
OUT
= 1.2 V
C
IN
= 1
mF
C
OUT
= 1
mF
50 60 70 80 90
I
OUT
= 300 mA
I
OUT
= 1 mA
V
OUT
, OUTPUT VOLTAGE (V)
2.83
2.82
2.81
2.80
2.79
2.78
2.77
2.76
2.75
2.74
2.73
−40 −30 −20 −10 0
10
20 30 40
V
IN
= 3.8 V
V
OUT
= 2.8 V
C
IN
= 1
mF
C
OUT
= 1
mF
50 60 70 80 90
I
OUT
= 300 mA
I
OUT
= 1 mA
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Output Voltage vs. Temperature
V
OUT
= 1.2 V (UDFN)
80
I
Q
, QUIESCENT CURRENT (mA)
−40°C
I
GND
, GROUND CURRENT (mA)
70
60
50
25°C
40
30
20
10
0
0.0
0.5
1.0 1.5
2.0 2.5
3.0 3.5
V
OUT
= 2.8 V
C
IN
= 1
mF
C
OUT
= 1
mF
4.0 4.5 5.0
5.5
V
IN
, INPUT VOLTAGE (V)
85°C
1000
900
800
700
600
500
400
300
200
100
0
0.001
Figure 4. Output Voltage vs. Temperature
V
OUT
= 2.8 V (UDFN)
V
IN
= 3.8 V
V
OUT
= 2.8 V
C
IN
= 1
mF
C
OUT
= 1
mF
85°C
25°C
−40°C
0.01
0.1
1
10
100
1000
I
OUT
, OUTPUT CURRENT (mA)
Figure 5. Quiescent Current vs. Input Voltage
Figure 6. Ground Current vs. Output Current
1000
I
GND
, GROUND CURRENT (mA)
900
800
700
600
500
400
300
200
100
0
−40 −30 −20 −10 0
I
OUT
= 1 mA
10 20 30 40 50 60 70
REG
LINE
, LINE REGULATION (%/V)
I
OUT
= 300 mA
V
IN
= 3.8 V
V
OUT
= 2.8 V
C
IN
= 1
mF
C
OUT
= 1
mF
0.1
0.08
0.06
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
−1
−40 −30 −20 −10 0
V
IN
= 1.7 V to 5.5 V
V
OUT
= 1.2 V
I
OUT
= 1 mA
C
IN
= 1
mF
C
OUT
= 1
mF
10 20 30 40 50 60 70
80 90
80 90
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Ground Current vs. Temperature
Figure 8. Line Regulation vs. Output Current
V
OUT
= 1.2 V
www.onsemi.com
4
NCP114
TYPICAL CHARACTERISTICS
0.1
0.08
0.06
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
−0.1
−40 −30 −20 −10 0
10
V
IN
= 3.8 V to 5.5 V
V
OUT
= 2.8 V
I
OUT
= 1 mA
C
IN
= 1
mF
C
OUT
= 1
mF
20 30 40
50 60 70 80 90
REG
LOAD
, LOAD REGULATION (mV)
REG
LINE
, LINE REGULATION (%/V)
20
18
16
14
12
10
8
6
4
2
0
−40 −30 −20 −10 0
10
V
IN
= 2.5 V
V
OUT
= 1.2 V
I
OUT
= 1 mA to 300 mA
C
IN
= 1
mF
C
OUT
= 1
mF
20 30 40
50 60 70 80 90
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. Line Regulation vs. Temperature
V
OUT
= 2.8 V
20
REG
LOAD
, LOAD REGULATION (mV)
V
DROP
, DROPOUT VOLTAGE (mV)
18
16
14
12
10
8
6
4
2
0
−40 −30 −20 −10 0
10
V
IN
= 3.8 V
V
OUT
= 2.8 V
I
OUT
= 1 mA to 300 mA
C
IN
= 1
mF
C
OUT
= 1
mF
20 30
40
50 60 70 80 90
200
180
160
140
120
100
80
60
40
20
0
0
Figure 10. Load Regulation vs. Temperature
V
OUT
= 1.2 V (UDFN)
T
J
= 85°C
T
J
= −40°C
V
IN
= 3.8 V
V
OUT
= 2.8 V
C
IN
= 1
mF
C
OUT
= 1
mF
200
250
300
T
J
= 25°C
50
100
150
T
J
, JUNCTION TEMPERATURE (°C)
I
OUT
, OUTPUT CURRENT (mA)
Figure 11. Load Regulation vs. Temperature
V
OUT
= 2.8 V (UDFN)
180
V
DROP
, DROPOUT VOLTAGE (mV)
V
DROP
, DROPOUT VOLTAGE (mV)
160
140
120
100
80
60
40
20
0
0
50
100
150
200
T
J
= 25°C
T
J
= 85°C
T
J
= −40°C
V
IN
= 4.45 V
V
OUT
= 3.45 V
C
IN
= 1
mF
C
OUT
= 1
mF
250
300
250
225
200
175
150
125
100
75
50
25
Figure 12. Dropout Voltage vs. Output Current
V
OUT
= 2.8 V (UDFN)
V
IN
= 3.8 V
V
OUT
= 2.8 V
C
IN
= 1
mF
C
OUT
= 1
mF
I
OUT
= 300 mA
I
OUT
= 100 mA
I
OUT
= 0 mA
0
−40 −30 −20 −10 0
10 20 30 40 50 60 70
80 90
I
OUT
, OUTPUT CURRENT (mA)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 13. Dropout Voltage vs. Output Current
V
OUT
= 3.45 V (UDFN)
Figure 14. Dropout Voltage vs. Temperature
V
OUT
= 2.8 V (UDFN)
www.onsemi.com
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