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NCP134AMX180TCG

LDO Regulator, 500 mA, Ultra-Low Dropout, with Bias Rail 1.8V Output Active Discharge, 3000-REEL

器件类别:电源/电源管理    电源电路   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:  

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器件参数
参数名称
属性值
Brand Name
ON Semiconduc
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
包装说明
HXSON, SOLCC4,.05,32
制造商包装代码
711BC
Reach Compliance Code
compli
Factory Lead Time
4 weeks
可调性
FIXED
最大回动电压 1
0.25 V
标称回动电压 1
0.14 V
最大绝对输入电压
6 V
最大输入电压
5.5 V
最小输入电压
2.1 V
JESD-30 代码
S-PDSO-N4
长度
1.2 mm
功能数量
1
输出次数
1
端子数量
4
工作温度TJ-Max
85 °C
工作温度TJ-Mi
-40 °C
最大输出电流 1
0.5 A
最大输出电压 1
1.827 V
最小输出电压 1
1.773 V
标称输出电压 1
1.8 V
封装主体材料
PLASTIC/EPOXY
封装代码
HXSON
封装等效代码
SOLCC4,.05,32
封装形状
SQUARE
封装形式
SMALL OUTLINE, HEAT SINK/SLUG, EXTREMELY THIN PROFILE
包装方法
TR
峰值回流温度(摄氏度)
NOT SPECIFIED
调节器类型
FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
座面最大高度
0.45 mm
表面贴装
YES
技术
CMOS
端子形式
NO LEAD
端子节距
0.8 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
1.5%
宽度
1.2 mm
文档预览
500 mA, Very Low Dropout
Bias Rail CMOS Voltage
Regulator
NCP134
The NCP134 is a 500 mA VLDO equipped with NMOS pass
transistor and a separate bias supply voltage (V
BIAS
). The device
provides very stable, accurate output voltage with low noise suitable
for space constrained, noise sensitive applications. In order to
optimize performance for battery operated portable applications, the
NCP134 features low I
Q
consumption. The XDFN4 1.2 mm x 1.2 mm
package is optimized for use in space constrained applications.
Features
www.onsemi.com
T
MARKING
DIAGRAM
1
XDFN4
CASE 711BC
XXM
1
Input Voltage Range: 0.8 V to 5.5 V
Bias Voltage Range: 2.4 V to 5.5 V
Fixed Voltage Versions Available
Output Voltage Range: 0.8 V to 2.1 V (Fixed)
±1.5%
Accuracy over Temperature, 0.5% V
OUT
@ 25°C
Ultra−Low Dropout: Max. 150 mV at 500 mA, 1.1 V Output, 3.3 V
Bias, 85°C
Very Low Bias Input Current of Typ. 80
mA
Very Low Bias Input Current in Disable Mode: Typ. 0.5
mA
Logic Level Enable Input for ON/OFF Control
Output Active Discharge Option Available
Stable with a 2.2
mF
Ceramic Capacitor
Available in XDFN4 − 1.2 mm x 1.2 mm x 0.4 mm Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
XX = Specific Device Code
M = Date Code
PIN CONNECTIONS
IN
4
3
EN
GND
5
OUT
1
(Top View)
2
BIAS
Typical Applications
Battery−powered Equipment
Smartphones, Tablets
Cameras, DVRs, STB and Camcorders
V
BIAS
>2.7 V
NCP134
100 nF
BIAS
V
IN
1.5 V
1
mF
IN
EN
GND
OUT
2.2
mF
V
OUT
1 V up to 500 mA
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 10 of this data sheet.
V
EN
Figure 1. Typical Application Schematics
©
Semiconductor Components Industries, LLC, 2017
1
September, 2019 − Rev. 7
Publication Order Number:
NCP134/D
NCP134
IN
EN
ENABLE
BLOCK
UVLO
CURRENT
LIMIT
OUT
BIAS
150
W
VOLTAGE
REFERENCE
+
THERMAL
LIMIT
*Active
DISCHARGE
GND
*Active output discharge function is present only in NCP134AMXyyyTCG devices.
yyy denotes the particular output voltage option.
Figure 2. Simplified Schematic Block Diagram − Fixed Version
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2
NCP134
PIN FUNCTION DESCRIPTION
Pin No.
XDFN4
1
2
3
4
5
Pin Name
OUT
BIAS
EN
IN
GND
Regulated Output Voltage pin
Bias voltage supply for internal control circuits. This pin is monitored by internal Under-Voltage
Lockout Circuit.
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into
shutdown mode.
Input Voltage Supply pin
Ground
Description
ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (Note 1)
Output Voltage
Chip Enable, Bias Input
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
Symbol
V
IN
V
OUT
V
EN,
V
BIAS
t
SC
T
J
T
STG
ESD
HBM
ESD
MM
Value
−0.3 to 6
−0.3 to (V
IN
+0.3)
6
−0.3 to 6
unlimited
150
−55 to 150
2000
200
Unit
V
V
V
s
°C
°C
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection (except OUT pin) and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating
Thermal Characteristics, XDFN4 1.2 mm x 1.2 mm
Thermal Resistance, Junction−to−Air (Note 3)
Symbol
R
qJA
Value
170
Unit
°C/W
3. This data was derived by thermal simulations for a single device mounted on the 40 mm x 40 mm x 1.6 mm FR4 PCB with 2−ounce 800 sq
mm copper area on top and bottom.
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3
NCP134
ELECTRICAL CHARACTERISTICS
−40°C
T
J
85°C; V
BIAS
= 2.7 V or (V
OUT
+ 1.6 V), whichever is greater, V
IN
= V
OUT(NOM)
+
0.3 V, I
OUT
= 1 mA, V
EN
= 1 V, unless otherwise noted. C
IN
= 1
mF,
C
OUT
= 2.2
mF.
Typical values are at T
J
= +25°C. Min/Max values are
for −40°C
T
J
85°C unless otherwise noted. (Note 4)
Parameter
Operating Input Voltage
Range
Operating Bias Voltage
Range
Undervoltage Lock−out
Output Voltage Accuracy
Output Voltage Accuracy
−40°C
T
J
85°C, V
OUT(NOM)
+ 0.3 V
V
IN
V
OUT(NOM)
+ 1.0 V, 2.7 V or (V
OUT(NOM)
+
1.6 V), whichever is greater < V
BIAS
< 5.5 V,
1 mA < I
OUT
< 500 mA
V
OUT(NOM)
+ 0.3 V
V
IN
5.0 V
2.7 V or (V
OUT(NOM)
+ 1.6 V), whichever is
greater < V
BIAS
< 5.5 V
I
OUT
= 1 mA to 500 mA
I
OUT
= 150 mA (Note 5)
I
OUT
= 500 mA (Note 5)
V
IN
Dropout Voltage
V
BIAS
Dropout Voltage
Output Current Limit
Bias Pin Operating Current
Bias Pin Disable Current
Vinput Pin Disable Current
EN Pin Threshold Voltage
NCP134AMX110TCG device, V
OUT(NOM)
=
1.1 V
,
V
BIAS
= 3.3 V, I
OUT
= 500 mA (Note 5)
I
OUT
= 500 mA, V
IN
= V
BIAS
(Notes 5, 6)
V
OUT
= 90% V
OUT(NOM)
V
BIAS
= 2.7 V
V
EN
0.4 V
V
EN
0.4 V
EN Input Voltage “H”
EN Input Voltage “L”
EN Pull Down Current
Turn−On Time
Power Supply Rejection
Ratio
V
EN
= 5.5 V
From assertion of V
EN
to V
OUT
=
98% V
OUT(NOM)
. V
OUT(NOM)
= 1.0 V
V
IN
to V
OUT
, f = 1 kHz, I
OUT
= 150 mA,
V
IN
V
OUT
+0.5 V
V
BIAS
to V
OUT
, f = 1 kHz, I
OUT
= 150 mA,
V
IN
V
OUT
+0.5 V
Output Noise Voltage
Thermal Shutdown
Threshold
Output Discharge
Pull−Down
V
IN
= V
OUT
+0.5 V, V
OUT(NOM)
= 1 V,
f = 10 Hz to 100 kHz
Temperature increasing
Temperature decreasing
V
EN
0.4 V, V
OUT
= 0.5 V, NCP134A options
only
R
DISCH
V
BIAS
Rising
Hysteresis
Test Conditions
Symbol
V
IN
V
BIAS
UVLO
V
OUT
V
OUT
−1.5
Min
V
OUT
+
V
DO
(V
OUT
+
1.40)
2.4
1.6
0.2
±0.5
+1.5
Typ
Max
5.5
5.5
Unit
V
V
V
%
%
V
IN
Line Regulation
V
BIAS
Line Regulation
Load Regulation
V
IN
Dropout Voltage
Line
Reg
Line
Reg
Load
Reg
V
DO
V
DO
V
DO
V
DO
I
CL
I
BIAS
I
BIAS(DIS)
I
VIN(DIS)
V
EN(H)
V
EN(L)
I
EN
t
ON
PSRR(V
IN
)
PSRR(V
BIAS
)
V
N
0.9
550
0.01
0.01
1.5
37
140
100
1.1
800
80
0.5
0.5
75
250
150
1.5
1000
110
1
1
%/V
%/V
mV
mV
V
mA
mA
mA
mA
V
0.4
0.3
150
70
80
40
160
140
150
W
1
mA
ms
dB
dB
mV
RMS
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T
A
= 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when V
OUT
falls 3% below V
OUT(NOM)
.
6. For output voltages below 0.9 V, V
BIAS
dropout voltage does not apply due to a minimum Bias operating voltage of 2.4 V.
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4
NCP134
TYPICAL CHARACTERISTICS
At T
J
= +25°C, V
IN
= V
OUT(TYP)
+ 0.3 V, V
BIAS
= 2.7 V, V
EN
= V
BIAS
, V
OUT(NOM)
= 1.0 V, I
OUT
= 500 mA,
C
IN
= 1
mF,
C
BIAS
= 0.1
mF,
and C
OUT
= 2.2
mF
(effective capacitance), unless otherwise noted.
200
180
160
140
120
100
80
60
40
20
0
0
100
200
300
400
500
I
OUT
, OUTPUT CURRENT (mA)
+25°C
−40°C
+85°C
+125°C
V
DO
(V
IN
− V
OUT
) DROPOUT VOLTAGE (mV)
200
180
160
140
120
100
80
60
40
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
BIAS
− V
OUT
(V)
+125°C
+85°C
+25°C −40°C
I
OUT
= 100 mA
V
DO
(V
IN
− V
OUT
) DROPOUT VOLTAGE (mV)
Figure 3. V
IN
Dropout Voltage vs. I
OUT
and
Temperature T
J
V
DO
(V
IN
− V
OUT
) DROPOUT VOLTAGE (mV)
300
I
OUT
= 300 mA
250
200
150
100
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
BIAS
− V
OUT
(V)
+125°C
+85°C
+25°C
−40°C
V
DO
(V
IN
− V
OUT
) DROPOUT VOLTAGE (mV)
500
450
400
350
300
250
200
150
100
50
0
0.5
Figure 4. V
IN
Dropout Voltage vs. (V
BIAS
V
OUT
) and Temperature T
J
I
OUT
= 500 mA
+125°C
+85°C
+25°C
−40°C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
BIAS
− V
OUT
(V)
Figure 5. V
IN
Dropout Voltage vs. (V
BIAS
V
OUT
) and Temperature T
J
V
DO
(V
BIAS
− V
OUT
) DROPOUT VOLTAGE (mV)
1500
1400
1300
1200
+25°C
1100
+85°C
1000
900
0
50
100
150
200
250
300
I
OUT
, OUTPUT CURRENT (mA)
40
20
0
0
−40°C
I
BIAS
(mA)
+125°C
140
120
Figure 6. V
IN
Dropout Voltage vs. (V
BIAS
V
OUT
) and Temperature T
J
+85°C
100
80
60
−40°C
+125°C
+25°C
50
100 150 200
250 300 350 400 450 500
I
OUT
, OUTPUT CURRENT (mA)
Figure 7. V
BIAS
Dropout Voltage vs. I
OUT
and
Temperature T
J
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5
Figure 8. BIAS Pin Current vs. I
OUT
and
Temperature T
J
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