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NCP2820FCT2G

Audio Amplifiers ANA CLAS D AUDIO AMP

器件类别:模拟混合信号IC    消费电路   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
零件包装代码
BGA
包装说明
VFBGA, BGA9,3X3,20
针数
9
制造商包装代码
499AL
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
标称带宽
20 kHz
商用集成电路类型
AUDIO AMPLIFIER
JESD-30 代码
S-PBGA-B9
JESD-609代码
e1
长度
1.45 mm
湿度敏感等级
1
信道数量
1
功能数量
1
端子数量
9
最高工作温度
85 °C
最低工作温度
-40 °C
标称输出功率
2.63 W
封装主体材料
PLASTIC/EPOXY
封装代码
VFBGA
封装等效代码
BGA9,3X3,20
封装形状
SQUARE
封装形式
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)
260
电源
3/5 V
认证状态
Not Qualified
座面最大高度
0.66 mm
最大压摆率
4.6 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
2.5 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
BALL
端子节距
0.5 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
40
宽度
1.45 mm
Base Number Matches
1
文档预览
NCP2820 Series
2.65 W Filterless Class-D
Audio Power Amplifier
The NCP2820 is a cost−effective mono Class−D audio power
amplifier capable of delivering 2.65 W of continuous average power
to 4.0
W
from a 5.0 V supply in a Bridge Tied Load (BTL)
configuration. Under the same conditions, the output power stage can
provide 1.4 W to a 8.0
W
BTL load with less than 1% THD+N. For
cellular handsets or PDAs it offers space and cost savings because no
output filter is required when using inductive tranducers. With more
than 90% efficiency and very low shutdown current, it increases the
lifetime of your battery and drastically lowers the junction
temperature.
The NCP2820 processes analog inputs with a pulse width
modulation technique that lowers output noise and THD when
compared to a conventional sigma−delta modulator. The device allows
independent gain while summing signals from various audio sources.
Thus, in cellular handsets, the earpiece, the loudspeaker and even the
melody ringer can be driven with a single NCP2820. Due to its low
42
mV
noise floor, A−weighted, a clean listening is guaranteed no
matter the load sensitivity. With zero pop and click noise performance
NCP2820A turns on within 1 ms versus 9 ms for NCP2820 version.
Features
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MARKING
DIAGRAMS
1
9−PIN FLIP−CHIP CSP
FC SUFFIX
CASE 499AL
xx
A
Y
WW
G
= AQ for NCP2820
= BD for NCP2820A
= Assembly Location
= Year
= Work Week
= Pb−Free Package
8
1
8 PIN UDFN 2x2.2
MU SUFFIX
CASE 506AV
xx
M
G
= ZB for NCP2820
= AT for NCV2820
= Date Code
= Pb−Free Package
1
xx MG
A1
MxxG
AYWW
C1
A3
Optimized PWM Output Stage: Filterless Capability
Efficiency up to 90%
Low 2.5 mA Typical Quiescent Current
Large Output Power Capability: 1.4 W with 8.0
W
Load (CSP) and
THD + N < 1%
Ultra Fast Start−up Time: 1 ms for NCP2820A Version
High Performance, THD+N of 0.03% @ V
p
= 5.0 V,
R
L
= 8.0
W,
P
out
= 100 mW
Excellent PSRR (−65 dB): No Need for Voltage Regulation
Surface Mounted Package 9−Pin Flip−Chip CSPand UDFN8
Fully Differential Design. Eliminates Two Input Coupling Capacitors
Very Fast Turn On/Off Times with Advanced Rising and Falling
Gain Technique
External Gain Configuration Capability
Internally Generated 250 kHz Switching Frequency
“Pop and Click” Noise Protection Circuitry
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
Cellular Phone
Portable Electronic Devices
PDAs and Smart Phones
Portable Computer
1
ORDERING INFORMATION
See detailed ordering and shipping information on page 19 of
this data sheet.
Cs
Audio
Input
from
DAC
R
i
R
i
INP
INM
SD
VP
OUTM
OUTP
Input from
Microcontroller
GND
Cs
R
i
1.6 mm
R
i
3.7 mm
Publication Order Number:
NCP2820/D
Applications
©
Semiconductor Components Industries, LLC, 2013
December, 2013
Rev. 8
NCP2820 Series
PIN CONNECTIONS
9−Pin Flip−Chip CSP
A1
INP
B1
VP
C1
INM
A2
GND
B2
VP
C2
SD
(Top View)
A3
OUTM
B3
GND
C3
OUTP
BATTERY
Cs
SD
VP
INP
INM
UDFN8
1
2
3
4
(Top View)
8
7
6
5
OUTM
GND
VP
OUTP
V
p
R
i
R
f
RAMP
GENERATOR
Negative
Differential
Input
R
i
INP
R
f
INM
OUTP
OUTM
300 kW
Positive
Differential
Input
SD
V
ih
Shutdown
Control
GND
V
il
Figure 1. Typical Application
PIN DESCRIPTION
Pin No.
CSP
A1
A2
A3
B1
B2
B3
C1
C2
UDFN8
3
7
8
2
6
7
4
1
Symbol
INP
GND
OUTM
V
p
V
p
GND
INM
SD
Type
I
I
O
I
I
I
I
I
Positive Differential Input.
Analog Ground.
Negative BTL Output.
Analog Positive Supply. Range: 2.5 V – 5.5 V.
Power Analog Positive Supply. Range: 2.5 V – 5.5 V.
Analog Ground.
Negative Differential Input.
The device enters in Shutdown Mode when a low level is applied on this pin. An internal
300 kW resistor will force the device in shutdown mode if no signal is applied to this pin. It
also helps to save space and cost.
Positive BTL Output.
Description
C3
5
OUTP
O
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2
R
L =
8
W
Data
Processor
CMOS
Output
Stage
NCP2820 Series
MAXIMUM RATINGS
Symbol
V
p
V
in
I
out
P
d
T
A
T
J
T
stg
R
qJA
Supply Voltage
Input Voltage
Max Output Current (Note 1)
Power Dissipation (Note 2)
Operating Ambient Temperature
Max Junction Temperature
Storage Temperature Range
Thermal Resistance Junction−to−Air
ESD Protection
Human Body Model (HBM) (Note 4)
Machine Model (MM) (Note 5)
Latchup Current @ T
A
= 85°C (Note 6)
Moisture Sensitivity (Note 7)
9−Pin Flip−Chip
UDFN8
9−Pin Flip−Chip
UDFN8
Rating
Active Mode
Shutdown Mode
Max
6.0
7.0
−0.3
to V
CC
+0.3
1.5
Internally Limited
−40
to +85
150
−65
to +150
90 (Note 3)
50
> 2000
> 200
$70
$100
Level 1
Unit
V
V
A
°C
°C
°C
°C/W
MSL
V
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The device is protected by a current breaker structure. See “Current Breaker Circuit” in the Description Information section for more
information.
2. The thermal shutdown is set to 160°C (typical) avoiding irreversible damage to the device due to power dissipation.
3. For the 9−Pin Flip−Chip CSP package, the R
qJA
is highly dependent of the PCB Heatsink area. For example, R
qJA
can equal 195°C/W with
50 mm
2
total area and also 135°C/W with 500 mm
2
. When using ground and power planes, the value is around 90°C/W, as specified in table.
4. Human Body Model: 100 pF discharged through a 1.5 kW resistor following specification JESD22/A114. On 9−Pin Flip−Chip, B2 Pin (V
P
)
is qualified at 1500 V.
5. Machine Model: 200 pF discharged through all pins following specification JESD22/A115.
6. Latchup Testing per JEDEC Standard JESD78.
7. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
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3
NCP2820 Series
ELECTRICAL CHARACTERISTICS
(Limits apply for T
A
= +25°C unless otherwise noted) (NCP2820FCT1G & NCP2820FCT2G)
Characteristic
Operating Supply Voltage
Supply Quiescent Current
Symbol
V
p
I
dd
Conditions
T
A
=
−40°C
to +85°C
V
p
= 3.6 V, R
L
= 8.0
W
V
p
= 5.5 V, No Load
V
p
from 2.5 V to 5.5 V, No Load
T
A
=
−40°C
to +85°C
V
p
= 4.2 V
T
A
= +25°C
T
A
= +85°C
V
p
= 5.5 V
T
A
= +25°C
T
A
= +85°C
Shutdown Voltage High
Shutdown Voltage Low
Switching Frequency
Gain
Output Impedance in Shutdown Mode
Resistance from SD to GND
Output Offset Voltage
Turn On Time
Turn Off Time
NCP2820
NCP2820A
NCP2820
NCP2820A
V
sdih
V
sdil
F
sw
G
Z
SD
Rs
Vos
Ton
Toff
Tsd
Vn
-
-
V
p
from 2.5 V to 5.5 V
T
A
=
−40°C
to +85°C
R
L
= 8.0
W
-
V
p
= 5.5 V
V
p
from 2.5 V to 5.5 V
V
p
from 2.5 V to 5.5 V
V
p
= 3.6 V, f = 20 Hz to 20 kHz
no weighting filter
with A weighting filter
R
L
= 8.0
W,
f = 1.0 kHz, THD+N < 1%
V
p
= 2.5 V
V
p
= 3.0 V
V
p
= 3.6 V
V
p
= 4.2 V
V
p
= 5.0 V
R
L
= 8.0
W,
f = 1.0 kHz, THD+N < 10%
V
p
= 2.5 V
V
p
= 3.0 V
V
p
= 3.6 V
V
p
= 4.2 V
V
p
= 5.0 V
R
L
= 4.0
W,
f = 1.0 kHz, THD+N < 1%
V
p
= 2.5 V
V
p
= 3.0 V
V
p
= 3.6 V
V
p
= 4.2 V
V
p
= 5.0 V
R
L
= 4.0
W,
f = 1.0 kHz, THD+N < 10%
V
p
= 2.5 V
V
p
= 3.0 V
V
p
= 3.6 V
V
p
= 4.2 V
V
p
= 5.0 V
Min
2.5
1.2
190
285 kW
R
i
Typ
2.15
2.61
0.42
0.45
0.8
0.9
250
300 kW
R
i
300
300
6.0
9.0
1.0
5.0
0.5
160
65
42
0.32
0.48
0.7
0.97
1.38
0.4
0.59
0.87
1.19
1.7
0.49
0.72
1.06
1.62
2.12
0.6
0.9
1.33
2.0
2.63
Max
5.5
4.6
mA
0.8
mA
1.5
0.4
310
315 kW
R
i
3.0
W
V
V
kHz
V
V
W
kW
mV
ms
ms
°C
mVrms
Unit
V
mA
Shutdown Current
I
sd
Thermal Shutdown Temperature
Output Noise Voltage
RMS Output Power
Po
W
W
W
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4
NCP2820 Series
ELECTRICAL CHARACTERISTICS
(Limits apply for T
A
= +25°C unless otherwise noted) (NCP2820FCT1G & NCP2820FCT2G)
Characteristic
Efficiency
Symbol
Conditions
R
L
= 8.0
W,
f = 1.0 kHz
V
p
= 5.0 V, P
out
= 1.2 W
V
p
= 3.6 V, P
out
= 0.6 W
R
L
= 4.0
W,
f = 1.0 kHz
V
p
= 5.0 V, P
out
= 2.0 W
V
p
= 3.6 V, P
out
= 1.0 W
Total Harmonic Distortion + Noise
THD+N
V
p
= 5.0 V, R
L
= 8.0
W,
f = 1.0 kHz, P
out
= 0.25 W
V
p
= 3.6 V, R
L
= 8.0
W,
f = 1.0 kHz, P
out
= 0.25 W
V
p
from 2.5 V to 5.5 V
V
ic
= 0.5 V to V
p
0.8 V
V
p
= 3.6 V, V
ic
= 1.0 V
pp
f = 217 Hz
f = 1.0 kHz
V
p_ripple_pk−pk
= 200 mV, R
L
= 8.0
W,
Inputs AC Grounded
V
p
= 3.6 V
f = 217 kHz
f = 1.0 kHz
Min
Typ
91
90
82
81
0.05
0.09
−62
−56
−57
Max
%
dB
dB
Unit
%
Common Mode Rejection Ratio
CMRR
Power Supply Rejection Ratio
PSRR
−62
−65
ELECTRICAL CHARACTERISTICS
(Limits apply for T
A
= +25°C unless otherwise noted) (NCP2820MUTBG & NCV2820MUTBG)
Characteristic
Operating Supply Voltage
Supply Quiescent Current
Symbol
V
p
I
dd
Conditions
T
A
=
−40°C
to +85°C
V
p
= 3.6 V, R
L
= 8.0
W
V
p
= 5.5 V, No Load
V
p
from 2.5 V to 5.5 V, No Load
T
A
=
−40°C
to +85°C
V
p
= 4.2 V
T
A
= +25°C
T
A
= +85°C
V
p
= 5.5 V
T
A
= +25°C
T
A
= +85°C
Shutdown Voltage High
Shutdown Voltage Low
Switching Frequency
Gain
Output Impedance in Shutdown Mode
Resistance from SD to GND
Output Offset Voltage
Turn On Time
Turn Off Time
Thermal Shutdown Temperature
Output Noise Voltage
V
sdih
V
sdil
F
sw
G
Z
SD
Rs
Vos
Ton
Toff
Tsd
Vn
-
-
V
p
from 2.5 V to 5.5 V
T
A
=
−40°C
to +85°C
R
L
= 8.0
W
-
V
p
= 5.5 V
V
p
from 2.5 V to 5.5 V
V
p
from 2.5 V to 5.5 V
V
p
= 3.6 V, f = 20 Hz to 20 kHz
no weighting filter
with A weighting filter
Min
2.5
1.2
180
285 kW
R
i
Typ
2.15
2.61
0.42
0.45
0.8
0.9
240
300 kW
R
i
20
300
6.0
1.0
1.0
160
65
42
Max
5.5
3.8
mA
0.8
2.0
mA
1.5
0.4
300
315 kW
R
i
V
V
kHz
V
V
kW
kW
mV
ms
ms
°C
mVrms
Unit
V
mA
Shutdown Current
I
sd
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5
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参数对比
与NCP2820FCT2G相近的元器件有:NCV2820MUTBG。描述及对比如下:
型号 NCP2820FCT2G NCV2820MUTBG
描述 Audio Amplifiers ANA CLAS D AUDIO AMP Audio Amplifiers CLASS D AUDIO AMPLIFIER
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
包装说明 VFBGA, BGA9,3X3,20 HVSON,
制造商包装代码 499AL 506AV
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 1 week 4 weeks
标称带宽 20 kHz 20 kHz
商用集成电路类型 AUDIO AMPLIFIER AUDIO AMPLIFIER
JESD-30 代码 S-PBGA-B9 R-PDSO-N8
JESD-609代码 e1 e3
长度 1.45 mm 2.2 mm
湿度敏感等级 1 1
信道数量 1 1
功能数量 1 1
端子数量 9 8
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
标称输出功率 2.63 W 2.19 W
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VFBGA HVSON
封装形状 SQUARE RECTANGULAR
封装形式 GRID ARRAY, VERY THIN PROFILE, FINE PITCH SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度) 260 NOT SPECIFIED
座面最大高度 0.66 mm 0.55 mm
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 2.5 V 2.5 V
表面贴装 YES YES
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin (Sn)
端子形式 BALL NO LEAD
端子节距 0.5 mm 0.5 mm
端子位置 BOTTOM DUAL
处于峰值回流温度下的最长时间 40 NOT SPECIFIED
宽度 1.45 mm 2 mm
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