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NCP4543IMN5RG-A

Power Switch ICs - Power Distribution NCP4543IMN5RG-A

器件类别:电源/电源管理    电源电路   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
零件包装代码
QFN
包装说明
HVQCCN,
针数
18
制造商包装代码
485BF
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
19 weeks
可调阈值
NO
模拟集成电路 - 其他类型
POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码
S-XQCC-N18
JESD-609代码
e3
长度
3 mm
湿度敏感等级
3
信道数量
1
功能数量
1
端子数量
18
最高工作温度
70 °C
最低工作温度
封装主体材料
UNSPECIFIED
封装代码
HVQCCN
封装形状
SQUARE
封装形式
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)
NOT SPECIFIED
座面最大高度
1 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
温度等级
COMMERCIAL
端子面层
Tin (Sn)
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
3 mm
参考设计
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NCP4543
ecoSwitcht
Advanced Load Management
Controlled Load Switch with Low R
ON
The NCP4543 load switch provides a component and area-reducing
solution for efficient power domain switching with inrush current
limit via soft start. It is designed to integrate control and driver
functionality with a high performance low on-resistance power
MOSFET in a single device. This cost effective solution is ideal for
power management and hot−swap applications requiring low power
consumption in a small footprint.
Features
www.onsemi.com
R
ON
TYP
10.2 mW
12.2 mW
V
CC
5.0 V
3.3 V
V
IN
1.8 V
I
MAX
7.3 A
5.0 V
Advanced Controller with Charge Pump
Integrated N−Channel MOSFET with ESD Protection
Soft−Start via Adjustable Slew Rate Control
Low On−Resistance
Input Voltage Range 0.5 V to 6 V
Low Standby Current
Load Bleed Function
No External Components Required
Enable Pins with CMOS Input Levels
This is a Pb−Free Device
MARKING
DIAGRAM
1
QFN18, 3x3
CASE 485BF
1
NCP
4543
ALYW
G
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
Typical Applications
Notebook and Tablet Computers
Handheld Electronics
Digital Cameras
Portable Medical Devices
Hard Drives
Peripheral Ports
3 V − 5.5 V
POL
V
CC
Bandgap
&
Biases
Delay and
Charge
Pump
Slew Rate
Control
RC
Oscillator
Controller
0.5 V − 6 V
V
IN
EN
GND
SR
BLEED
Load
PIN CONFIGURATION
POL
V
IN
18
1
2
19: V
IN
GND
V
IN
3
4
11
10
V
IN
V
IN
V
IN
SR
17
EN
15
16
14
13
12
BLEED
V
IN
DELAY
V
CC
5
6
7
8
V
OUT
V
OUT
V
OUT
V
IN
(Top View)
ORDERING INFORMATION
Device
DELAY
V
OUT
V
IN
9
Package
QFN18
(Pb−Free)
Shipping
3000 /
Tape & Reel
NCP4543IMN5RG−A
Figure 1. Typical Application − No external components included
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
November, 2016 − Rev. 5
Publication Order Number:
NCP4543/D
NCP4543
PIN DESCRIPTION
Pin
1
2
3
4, 5, 9−12, 14, 18, 19
6−8
13
15
Name
DELAY
V
CC
GND
V
IN
V
OUT
BLEED
EN
Turn−on delay adjustment
Supply voltage to controller (3.0 V − 5.5 V)
Controller ground
Drain of MOSFET (0.5 V − 6.0 V)
Source of MOSFET connected to load
Load bleed connection
Digital input used to turn on the MOSFET according to this truth table:
EN
0
0
1
1
POL
0
1
0
1
MOSFET
On
Off
Off
On
Function
16
POL
EN has an internal pull down resistor to GND
POL has an internal pull up resistor to V
CC
17
SR
Slew rate adjustment
ABSOLUTE MAXIMUM RATINGS
Rating
Supply Voltage Range
Input Voltage Range
Output Voltage Range
EN/POL Digital Input Range
Thermal Resistance, Junction−to−Air (Note 1)
Thermal Resistance, Junction−to−Air (Note 2)
Thermal Resistance, Junction−to−Case (V
IN
Paddle)
Continuous MOSFET Current (Note 3)
Total Power Dissipation @ T
A
= 25°C (Notes 1 and 4)
Derate above T
A
= 25°C
Total Power Dissipation @ T
A
= 25°C (Notes 2 and 4)
Derate above T
A
= 25°C
Storage Temperature Range
Lead Temperature, Soldering (10 sec.)
ESD Capability, Human Body Model (Note 5)
ESD Capability, Machine Model (Note 5)
ESD Capability, Charged Device Model (Note 5)
Latch−up Current Immunity (Note 5)
Symbol
V
CC
V
IN
V
OUT
V
EN
R
qJA
R
qJA
R
qJC
I
MAX
P
D
P
D
T
STG
T
SLD
ESD
HBM
ESD
MM
ESD
CDM
LU
Value
−0.3 to 6
−0.3 to 6
−0.3 to 6
−0.3 to (V
CC
+ 0.3)
49.5
32.9
3.6
7.3
1.31
20.2
1.98
30.4
−40 to 150
260
3.5
200
1
100
Unit
V
V
V
V
°C/W
°C/W
°C/W
A
W
mW/°C
W
mW/°C
°C
°C
kV
V
kV
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Current limited by package.
4. Specified for derating purposes only, ensure that I
MAX
is never exceeded.
5. Tested by the following methods @ T
A
= 25°C:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per EIA/JESD22−A115
ESD Charged Device Model per ESD−STM5.3.1−1999
Latch−up Current Maximum Rating:
≤100
mA per JEDEC standard: JESD78
www.onsemi.com
2
NCP4543
RECOMMENDED OPERATING RANGES
Rating
Supply Voltage
Input Voltage
Ground
Ambient Temperature
Junction Temperature
Symbol
V
CC
V
IN
GND
T
A
T
J
0
0
Min
3
0.5
Max
5.5
6
0
70
90
Unit
V
V
V
°C
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
MOSFET
On−Resistance
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 5.0 V
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 5.0 V
Leakage Current (Note 6)
CONTROLLER
Supply Standby Current (Note 7)
Supply Dynamic Current (Note 8)
Bleed Resistance
Input High Voltage − EN & POL
Input Low Voltage − EN & POL
Pull Down Resistance − EN
Pull Up Resistance − POL
V
EN
= 0V; V
POL
= V
CC
= 5.5 V
V
EN
= V
POL
= V
CC
I
STBY
I
DYN
R
BLEED
V
IH
V
IL
R
PD
R
PU
40
40
100
100
50
2.0
0.8
180
180
5.0
250
100
15
500
200
mA
mA
W
V
V
kW
kW
V
EN
= 0 V; V
POL
= V
CC
; V
IN
= 6 V
I
LEAK
R
ON
10.2
10.5
11
12.2
0.02
13
13.5
14
16
1.0
mA
mW
Test Conditions
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Average current from V
IN
to V
OUT
with MOSFET turned off.
7. Average current from V
CC
to GND with MOSFET turned off.
8. Average current from V
CC
to GND after charge up time of MOSFET.
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3
NCP4543
SWITCHING CHARACTERISTICS
(T
J
= 25°C unless otherwise specified, Note 9)
Parameter
V
CC
= 5.0 V, V
IN
= 1.8 V
Output Slew Rate
Output Turn−on Delay
Output Turn−off Delay
V
CC
= 3.3 V, V
IN
= 5.0 V
Output Slew Rate
Output Turn−on Delay
Output Turn−off Delay
R
L
= 10
W,
C
L
= 0.1
mF
R
L
= 10
W,
C
L
= 0.1
mF
R
L
= 10
W,
C
L
= 0.1
mF
SR
T
ON
T
OFF
8.5
670
0.8
kV/s
ms
ms
R
L
= 10
W,
C
L
= 0.1
mF
R
L
= 10
W,
C
L
= 0.1
mF
R
L
= 10
W,
C
L
= 0.1
mF
SR
T
ON
T
OFF
8.1
540
1.2
kV/s
ms
ms
Test Conditions
Symbol
Min
Typ
Max
Unit
9. See below figure for Test Circuit and Timing Diagrams.
V
IN
V
CC
OFF ON
EN
POL
GND
NCP4543
V
OUT
BLEED
SR
DELAY
R
L
C
L
V
EN
T
ON
50%
50%
T
OFF
90%
V
OUT
Dt
90%
10%
SR =
DV
Dt
DV
V
OUT
10%
Figure 2. Test Circuit and Timing Diagrams
100
10
ms
I
D
, DRAIN CURRENT (A)
100
ms
10
T
A
= 85°C
T
J
= 125°C
0 V
V
GS
6 V
Single Pulse
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
1 ms
10 ms
100 ms
1
0.1
0.01
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 3. Maximum Rated Forward Biased
Safe Operating Area
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4
NCP4543
TYPICAL CHARACTERISTICS
15.5
15
R
ON
, ON−RESISTANCE (mW)
14.5
14
13.5
13
12.5
12
11.5
11
10.5
10
0.5
1
1.5
2
2.5
3
3.5
4
V
CC
= 4 V
V
CC
4.5 V
4.5
5
5.5
6
V
IN
, INPUT VOLTAGE (V)
V
CC
= 3 V
V
CC
= 3.3 V
R
ON
, ON−RESISTANCE (mW)
15.5
15
14.5
14
13.5
13
12.5
12
11.5
11
10.5
10
3
3.5
4
4.5
5
5.5
V
CC
, SUPPLY VOLTAGE (V)
V
IN
= 6 V
5V
3.3 V
1.8 V
0.5 V
Figure 4. On−Resistance vs. Input Voltage
Figure 5. On−Resistance vs. Supply Voltage
20
19
R
ON
, ON−RESISTANCE (mW)
SR, SLEW RATE (kV/s)
18
17
16
15
14
13
12
11
10
9
8
0
10
20
30
40
V
IN
= 1.8 V
V
CC
= 5 V
V
IN
= 5 V
V
CC
= 3.3 V
V
IN
= 6 V
V
CC
= 3 V
9
8.5
8
7.5
7
6.5
6
5.5
5
70
80
90
4.5
0.5
1
1.5
2
2.5
3
3.5
4
V
CC
= 5.5 V
V
CC
= 3 V
50
60
4.5
5
5.5
6
T
J
, JUNCTION TEMPERATURE (°C)
V
IN
, INPUT VOLTAGE (V)
Figure 6. On−Resistance vs. Temperature
Figure 7. Slew Rate vs. Input Voltage
9
8.5
SR, SLEW RATE (kV/s)
8
7.5
7
6.5
6
5.5
5
4.5
3
3.5
4
4.5
5
5.5
V
CC
, SUPPLY VOLTAGE (V)
V
IN
= 0.5 V
V
IN
= 6 V
8.7
8.6
8.5
SR, SLEW RATE (kV/s)
8.4
8.3
8.2
8.1
8.0
7.9
7.8
7.7
7.6
7.5
0
10
20
30
40
V
CC
= 3.3 V
V
IN
= 5 V
50
60
70
80
90
T
J
, JUNCTION TEMPERATURE (°C)
V
CC
= 5 V
V
IN
= 1.8 V
Figure 8. Slew Rate vs. Supply Voltage
Figure 9. Slew Rate vs. Temperature
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