NCP5332A
Two−Phase Buck Controller
with Integrated Gate
Drivers and 5−Bit DAC
The NCP5332A is a second−generation, two−phase step down
controller which incorporates all control functions required to power
high performance processors and high current power supplies.
Proprietary multi−phase architecture guarantees balanced load current
distribution and reduces overall solution cost in high current
applications. Enhanced V
2
™
control architecture provides the fastest
possible transient response, excellent overall regulation, and ease of
use. The NCP5332A is a second−generation PWM controller because
it optimizes transient response by combining traditional Enhanced V
2
with an internal PWM ramp and fast−feedback directly from V
CORE
to
the internal PWM comparator. These enhancements provide greater
design flexibility, facilitate use and reduce output voltage jitter.
The NCP5332A multi−phase architecture reduces output voltage
and input current ripple, allowing for a significant reduction in filter
size and inductor values with a corresponding increase in inductor
current slew rate. This approach allows a considerable reduction in
input and output capacitor requirements, as well as reducing overall
solution size and cost.
Features
•
Enhanced V
2
Control Method with Internal Ramp
•
Internal PWM Ramp
•
Fast−Feedback Directly from V
CORE
•
VRM 9.X DAC with 1.0% Accuracy
•
Adjustable Output Voltage Positioning
•
4 On−Board Gate Drivers
•
200 kHz to 800 kHz Operation Set by Resistor
•
Current Sensed through Buck Inductors or Sense Resistors
•
Hiccup Mode Current Limit
•
Individual Current Limits for Each Phase
•
On−Board Current Sense Amplifiers
•
3.3 V, 1.0 mA Reference Output
•
5 V and 12 V, or 12 V Only Operation
•
On/Off Control (through Soft Start Pin)
•
Power Good Output with Internal Delay
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28
1
SO−28L
DW SUFFIX
CASE 751F
PIN CONNECTIONS AND
MARKING DIAGRAM
1
COMP
V
FB
V
DRP
CS1
CS2
CS
REF
PWRGD
V
ID0
V
ID1
V
ID2
V
ID3
V
ID4
I
LIM
REF
A
WL, L
YY, Y
WW, W
28
R
OSC
V
CCL
V
CCL1
GATE(L)1
GND
GATE(H)1
V
CCH1
LGND
SS
V
CCL2
GATE(L)2
GND2
GATE(H)2
V
CCH2
= Assembly Location
= Wafer Lot
= Year
= Work Week
ORDERING INFORMATION
Device
NCP5332ADW
NCP5332ADWR2
Package
SO−28L
SO−28L
Shipping
26 Units/Rail
1000 Tape & Reel
NCP5332A
AWLYYWW
©
Semiconductor Components Industries, LLC, 2003
1
August, 2003 − Rev. 4
Publication Order Number:
NCP5332A/D
NCP5332A
+12 V
D3
MBRA120LT3
ENABLE
D1
BAT54SLT1
D2
BAT54SLT1
1.0
µF
R3
R
VFBK
2.0 k
C
VFBK
470 pF
C
AMP
2.2 nF
V
FB
C
CMP1
2.2 nF
C
VCC
1.0
µF
330
Q5
2N3904
BZX84C18LT1
D4
18 V
C
OUT
Electrolytics
1.0 k
1.0
µF
BAV199LT1
C
Q3
0.1
µF
C
VCCHx
1.0
µF
C
CER
V
CORE
Ceramics
+
L1 300 nH
C2
1.0
µF
+
10
Ω
C1
1.0
µF
C
INPUT
Electrolytics
C
Q1
0.1
µF
Q1
L2 770 nH
Q2
SIG
GND
R
DRP
6.98 k
COMP
V
FB
V
DRP
Cs1
CS2
CS
REF
PWRGD
V
ID0
V
ID1
V
ID2
V
ID3
V
ID4
I
LIM
REF
R
OSC
65 k
R
OSC
V
CCL
V
CCL1
GL1
GND1
GH1
V
CCH1
LGND
SS
V
CCL2
GL2
GND2
GH2
V
CCH2
C
SS
0.1
µF
SIG
GND
C
VCCLx
1.0
µF
R
CSREF
36 k
C
CSREF
0.01
µF
SIG
GND
CS
REF
PWRGD
V
ID0
V
ID1
V
ID2
V
ID3
V
ID4
1.0
µF
Q3
L3 770 nH
BAV199LT1
Q4
SIG
GND
R
LIM2
1.0 k
R
LIM1
3.6 k
SIG
GND
C
REF
0.1
µF
SIG
GND
CS1
CS2
NCP5332A
R
CS1
71 k
1.0 k
SWNODE1
SWNODE2
C
CS1
0.01
µF
C
CS2
0.01
µF
R
CS2
71 k
Recommended Components:
L1: Coiltronics P/N CTX15−14771 or T30−26 core with 3T of #16 AWG
L2: T50−52B with 5T of #16 AWG Bifilar
C
INPUT
: 3
×
Sanyo Oscon 16SP270M (270
µF,
16 V, 4.4 A
RMS
, 18 mΩ)
C
OUT
: 10
×
Rubycon 16MBZ1500M10x20 (1500
µF,
16 V, 13 mΩ)
or 8
×
Sanyo Oscon 4SP820M (820
µF,
4 V, 12 mΩ)
C
CERAMICS
: 12
×
Panasonic ECJ−3YB0J106K (10
µF,
6.3 V)
Q1−Q4: ON Semiconductor NTB85N03T1
Figure 1. Application Diagram, 12 V Only to 1.6 V at 45 A, 220 kHz
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2
NCP5332A
+12 V
L1 300 nH
+5.0 V
D1
MBRA120LT3
ENABLE
2.2
Ω
C
Q1
0.1
µF
C
AMP
2.2 nF
V
FB
C
CMP1
2.2 nF
C
VCC
1.0
µF
+
C
INPUT
Electrolytics
R
VFBK
1.0 k
C
VFBK
470 pF
Q1
L2 400 nH
Q2
SIG
GND
R
DRP
3.4 k
COMP
V
FB
V
DRP
Cs1
CS2
CS
REF
PWRGD
V
ID0
V
ID1
V
ID2
V
ID3
V
ID4
I
LIM
REF
R
OSC
39.2 k
R
OSC
V
CCL
V
CCL1
GL1
GND1
GH1
V
CCH1
LGND
SS
V
CCL2
GL2
GND2
GH2
V
CCH2
C
SS
0.1
µF
SIG
GND
SWNODE1
C
OUT
Electrolytics
+
C
VCCLx
1.0
µF
V
CORE
C
CER
Ceramics
R
CSREF
9.1 k
C
CSREF
0.01
µF
SIG
GND
CS
REF
PWRGD
V
ID0
V
ID1
V
ID2
V
ID3
V
ID4
C
VCCHx
1.0
µF
C
Q3
0.1
µF
Q3
L3 400 nH
Q4
SIG
GND
R
LIM2
1.0 k
R
LIM1
2.0 k
SIG
GND
C
REF
0.1
µF
SIG
GND
CS1
CS2
NCP5332A
R
CS1
18 k
SWNODE2
C
CS2
0.01
µF
R
CS2
18 k
C
CS1
0.01
µF
Recommended Components:
L1: Coiltronics P/N CTX15−14771 or T30−26 core with 3T of #16 AWG
L2: Coiltronics P/N CTX15−14811 or T60−2 with 8T of #16 AWG Bifilar
Figure 2. Alternate Application Diagram, 5.0 V (with 12 V Bias) to 1.6 V at 45 A, 335 kHz
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3
NCP5332A
MAXIMUM RATINGS*
Rating
Operating Junction Temperature
Lead Temperature Soldering:
Package Thermal Resistance:
Junction−to−Case, R
θJC
Junction−to−Ambient, R
θJA
Storage Temperature Range
ESD Susceptibility:
Human Body Model
Machine Model
JEDEC Moisture Sensitivity
1. 60 second maximum above 183°C.
*The maximum package power dissipation must be observed.
Reflow: (SMD styles only) (Note 1)
Value
150
230 peak
15
75
−65 to +150
2.0
200
Level 2
Unit
°C
°C
°C/W
°C/W
°C
kV
V
−
MAXIMUM RATINGS
Pin Name
COMP
V
FB
V
DRP
CS1, CS2
CS
REF
R
OSC
PWRGD
VID Pins
I
LIM
REF
SS
V
CCL
V
CCHx
V
CCLx
GATE(H)x
GATE(L)x
GND1, GND2
LGND
V
MAX
6.0 V
6.0 V
6.0 V
6.0 V
6.0 V
6.0 V
6.0 V
6.0 V
6.0 V
6.0 V
6.0 V
16 V
20 V
16 V
20 V
16 V
0.3 V
0V
V
MIN
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−2.0 V for 100 ns,
−0.3 V DC
−2.0 V for 100 ns,
−0.3 V DC
−0.3 V
0V
I
SOURCE
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
N/A
N/A
N/A
1.5 A for 1.0
µs,
200 mA DC
1.5 A for 1.0
µs,
200 mA DC
2.0 A for 1.0
µs,
200 mA DC
50 mA
I
SINK
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
1.0 mA
8.0 mA
1.0 mA
1.0 mA
20 mA
1.0 mA
50 mA
1.5 A for 1.0
µs,
200 mA DC
1.5 A for 1.0
µs,
200 mA DC
1.5 A for 1.0
µs,
200 mA DC
1.5 A for 1.0
µs,
200 mA DC
N/A
N/A
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4
NCP5332A
ELECTRICAL CHARACTERISTICS
(0°C < T
A
< 70°C; 0°C < T
J
< 125°C; 9.5 V < V
CCH1
= V
CCH2
< 20 V;
4.5 V < V
CCL
= V
CCL1
= V
CCL2
< 14 V; C
GATE
= 3.3 nF, R
R(OSC)
= 32.4 kΩ, C
COMP
= 1.0 nF, C
REF
= 0.1
µF,
C
SS
= 0.1
µF,
DAC Code 10000 (1.45 V), C
VCC
= 1.0
µF;
unless otherwise specified.)
Characteristic
Voltage Identification DAC
Accuracy (all codes)
V
ID4
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
V
ID3
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
V
ID2
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
V
ID1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
V
ID0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
ID4
, V
ID3
, V
ID2
, V
ID1
, V
ID0
V
ID4
, V
ID3
, V
ID2
, V
ID1
, V
ID0
−
Fault Mode − Output Off
1.089
1.114
1.139
1.163
1.188
1.213
1.238
1.262
1.287
1.312
1.337
1.361
1.386
1.411
1.436
1.460
1.485
1.510
1.535
1.559
1.584
1.609
1.634
1.658
1.683
1.708
1.733
1.757
1.782
1.807
1.832
1.00
25
3.15
1.100
1.125
1.150
1.175
1.200
1.225
1.250
1.275
1.300
1.325
1.350
1.375
1.400
1.425
1.450
1.475
1.500
1.525
1.550
1.575
1.600
1.625
1.650
1.675
1.700
1.725
1.750
1.775
1.800
1.825
1.850
1.25
50
3.30
1.111
1.136
1.162
1.187
1.212
1.237
1.263
1.288
1.313
1.338
1.364
1.389
1.414
1.439
1.465
1.490
1.515
1.540
1.566
1.591
1.616
1.641
1.667
1.692
1.717
1.742
1.768
1.793
1.818
1.843
1.869
1.50
100
3.45
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
kΩ
V
Measure V
FB
= COMP
±
1.0
%
Test Conditions
Min
Typ
Max
Unit
Input Threshold
Input Pull−up Resistance
Pull−up Voltage
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5
